B24B57/02

Polishing fluid additive concentration measurement apparatus and methods related thereto

Methods and apparatus for monitoring and controlling relative concentrations of polishing fluid additives and, or, the distribution of a polishing fluid and, or, polishing fluid additives across the surface of a polishing pad during chemical mechanical planarization (CMP) of a substrate are provided herein. In one embodiment, a method for polishing a substrate includes delivering a polishing fluid to one or more locations on a polishing surface of a polishing pad, wherein the polishing fluid comprises an optical marker; detecting optical information at a plurality of locations across a scan region of the polishing surface using an optical sensor facing theretowards; communicating the optical information to a system controller; determining a polishing fluid distribution across the scan region using the optical information; and changing an aspect of the delivery of the polishing fluid based on the polishing fluid distribution.

Polishing fluid additive concentration measurement apparatus and methods related thereto

Methods and apparatus for monitoring and controlling relative concentrations of polishing fluid additives and, or, the distribution of a polishing fluid and, or, polishing fluid additives across the surface of a polishing pad during chemical mechanical planarization (CMP) of a substrate are provided herein. In one embodiment, a method for polishing a substrate includes delivering a polishing fluid to one or more locations on a polishing surface of a polishing pad, wherein the polishing fluid comprises an optical marker; detecting optical information at a plurality of locations across a scan region of the polishing surface using an optical sensor facing theretowards; communicating the optical information to a system controller; determining a polishing fluid distribution across the scan region using the optical information; and changing an aspect of the delivery of the polishing fluid based on the polishing fluid distribution.

POLISHING SLURRY DISPENSE NOZZLE

Exemplary slurry delivery systems may include a slurry source. The systems may include a slurry line coupled with the slurry source. The systems may include a slurry dispensing nozzle. The nozzle may include a lumen having an inlet that is fluidly coupled with a slurry outlet of the slurry line. The nozzle may include a body defining a reservoir and an exit port. The reservoir may be fluidly coupled with a downstream end of the lumen. The exit port may be coupled with the reservoir. The nozzle may include a valve seat. The nozzle may include a valve member having a first surface positioned against the valve seat when in a closed position. The valve member may be movable to an open position in which the first surface is spaced apart from the valve seat. The nozzle may include an actuator coupled with a second surface of the valve member.

POLISHING SLURRY DISPENSE NOZZLE

Exemplary slurry delivery systems may include a slurry source. The systems may include a slurry line coupled with the slurry source. The systems may include a slurry dispensing nozzle. The nozzle may include a lumen having an inlet that is fluidly coupled with a slurry outlet of the slurry line. The nozzle may include a body defining a reservoir and an exit port. The reservoir may be fluidly coupled with a downstream end of the lumen. The exit port may be coupled with the reservoir. The nozzle may include a valve seat. The nozzle may include a valve member having a first surface positioned against the valve seat when in a closed position. The valve member may be movable to an open position in which the first surface is spaced apart from the valve seat. The nozzle may include an actuator coupled with a second surface of the valve member.

Cleaning process of wafer polishing pad and cleaning nozzle

A cleaning process of wafer polishing pad, the process includes providing a wafer polishing pad, performing a planarization process with the wafer polishing pad, leaving a residue on the wafer polishing pad after the planarization process, and performing a cleaning step with a cleaning nozzle to remove the residue, the cleaning nozzle comprises at least one Y-shaped pipe, one end of which is a water outlet, and the other two ends are respectively a water inlet and an air inlet, wherein a cleaning liquid flows from the water inlet to the water outlet, and a pressurized gas flows in from the air inlet.

Cleaning process of wafer polishing pad and cleaning nozzle

A cleaning process of wafer polishing pad, the process includes providing a wafer polishing pad, performing a planarization process with the wafer polishing pad, leaving a residue on the wafer polishing pad after the planarization process, and performing a cleaning step with a cleaning nozzle to remove the residue, the cleaning nozzle comprises at least one Y-shaped pipe, one end of which is a water outlet, and the other two ends are respectively a water inlet and an air inlet, wherein a cleaning liquid flows from the water inlet to the water outlet, and a pressurized gas flows in from the air inlet.

Temperature control of chemical mechanical polishing

A chemical mechanical polishing apparatus includes a platen to hold a polishing pad, a carrier to hold a substrate against a polishing surface of the polishing pad during a polishing process, a dispenser to supply a polishing liquid to the polishing surface, and a temperature control system including a body configured to contact the polishing surface or the polishing liquid on the polishing surface. The body supports a thermal control module positioned over the polishing pad.

Temperature control of chemical mechanical polishing

A chemical mechanical polishing apparatus includes a platen to hold a polishing pad, a carrier to hold a substrate against a polishing surface of the polishing pad during a polishing process, a dispenser to supply a polishing liquid to the polishing surface, and a temperature control system including a body configured to contact the polishing surface or the polishing liquid on the polishing surface. The body supports a thermal control module positioned over the polishing pad.

Method of processing workpiece

A method of processing a plate-shaped workpiece is provided. The method includes the steps of sticking a protective member to a face side of the workpiece, holding the face side of the workpiece on a holding surface of a chuck table with the protective member interposed therebetween, grinding a reverse side of the workpiece held on the chuck table to thin the workpiece by rotating a grinding wheel including grinding stones that contain abrasive grains, while a grinding fluid is being supplied from a grinding fluid supply nozzle to the reverse side of the workpiece, and after the step of grinding the reverse side of the workpiece, treating the workpiece or the grinding stones by rotating the grinding wheel and bringing the grinding stones into contact with the reverse side of the workpiece, while stopping supplying the grinding fluid from the grinding fluid supply nozzle.

Method of processing workpiece

A method of processing a plate-shaped workpiece is provided. The method includes the steps of sticking a protective member to a face side of the workpiece, holding the face side of the workpiece on a holding surface of a chuck table with the protective member interposed therebetween, grinding a reverse side of the workpiece held on the chuck table to thin the workpiece by rotating a grinding wheel including grinding stones that contain abrasive grains, while a grinding fluid is being supplied from a grinding fluid supply nozzle to the reverse side of the workpiece, and after the step of grinding the reverse side of the workpiece, treating the workpiece or the grinding stones by rotating the grinding wheel and bringing the grinding stones into contact with the reverse side of the workpiece, while stopping supplying the grinding fluid from the grinding fluid supply nozzle.