Provided is a method for preparing a grain boundary insulation-type dielectric. The method includes the steps of obtaining a titanic acid compound and a ferroelectric having a value less than a melting point of the titanic acid compound; obtaining a mixture by adding the ferroelectric material to the titanic acid compound; and sintering the mixture at a temperature equal to or more than a melting point of the ferroelectric material.

A manufacturing method is disclosed herein. The method includes arranging a preform over a surface of an inner mold line; folding the preform over sides of the inner mold line; pressing an end of the preform into a grip strip coupled to a side of the inner mold line; and applying pressure to the preform to force excess material of the preform into a forming bead of the inner mold line.

A method of producing ceramic wafer includes a forming step and processing step. The processing step includes forming positioning notch or positioning, flat edge and edge profile, which avoids the ceramic wafers to have processing defect during cutting, grinding, and polishing, for increasing yield. The ceramic particles for producing ceramic wafer include nitride ceramic powder, oxide ceramic powder, and nitride ceramic powder. The ceramic wafer has low dielectric constant, insulation, and excellent heat dissipation, which can be applied for the need of semiconductor process, producing electric product and semiconductor equipment.

There is provided an oxide sintered body including indium, tungsten and zinc, wherein the oxide sintered body includes a bixbite type crystal phase as a main component and has an apparent density of higher than 6.5 g/cm.sup.3 and equal to or lower than 7.1 g/cm.sup.3, a content rate of tungsten to a total of indium, tungsten and zinc is higher than 1.2 atomic % and lower than 30 atomic %, and a content rate of zinc to the total of indium, tungsten and zinc is higher than 1.2 atomic % and lower than 30 atomic %. There are also provided a sputtering target including this oxide sintered body, and a semiconductor device including an oxide semiconductor film formed by a sputtering method by using the sputtering target.

A method includes molding a raw material powder containing a ceramic powder and a thermoplastic resin having a glass transition temperature higher than room temperature into a shape by isostatic pressing and in which a raw material powder slurry is prepared by adding the ceramic powder and the thermoplastic resin to a solvent so that the thermoplastic resin is 2% by weight or more and 40% by weight or less with respect to a total weight of the ceramic powder and the thermoplastic resin, a cast-molded body is to formed by wet-casting the raw material powder slurry into a shape, dried, and subjected to first-stage isostatic press molding at a temperature lower than the glass transition temperature of the thermoplastic resin, then this first-stage press-molded body is heated to the glass transition temperature of the thermoplastic resin or above, and warm isostatic press (WIP) molding is performed.

A method of fabricating a ceramic molded body for sintering, which includes molding a raw material powder containing a ceramic powder and a thermoplastic resin having a glass transition temperature higher than room temperature into a predetermined shape by isostatic pressing and in which a first-stage press-molded body is fabricated by subjecting a uniaxially press-molded body fabricated by uniaxially pressing the raw material powder into a predetermined shape or the raw material powder filled in a rubber die to a first-stage isostatic press molding at a temperature lower than a glass transition temperature of the thermoplastic resin and then a ceramic molded body is fabricated by heating this first-stage press-molded body to a temperature equal to or higher than the glass transition temperature of the thermoplastic resin and performing warm isostatic press molding as second-stage isostatic press molding.

A method of fabricating a part out of composite material, includes forming a fiber texture from refractory fibers; placing the texture in a mold having an impregnation chamber including in its bottom portion a part made of porous material, the impregnation chamber being closed in its top portion by a deformable impermeable diaphragm separating the impregnation chamber from a compacting chamber; injecting a slip containing a powder of refractory particles into the impregnation chamber; injecting a compression fluid into the compacting chamber, to force the slip to pass through the texture; draining the liquid of the slip via the porous material part, while retaining the powder of refractory particles inside the texture so as to obtain a fiber preform filled with refractory particles; drying the fiber preform; unmolding the preform; and sintering the refractory particles present in the preform in order to form a refractory matrix in the preform.

A press die for producing a clay roof tile, including a first die half and a second die half, which can move between a pressing position, in which they define a receiving space that represents the form of the finished roof tile, and a filling position, in which they are mutually spaced and the receiving space can be filled with a plastically deformable clay material. At least one of the first and the second die half has at least one depression which represents a projecting part of the finished roof tile; a first compression element is provided at the depression, and movable between an initial position, in which it is retracted in relation to the form of the finished roof tile, and a compacting position, in which some sections of the first compression element represent the surface of the finished roof tile.

There is provided an oxide sintered body including indium, tungsten and zinc, wherein the oxide sintered body includes a bixbite type crystal phase as a main component and has an apparent density of higher than 6.5 g/cm.sup.3 and equal to or lower than 7.1 g/cm.sup.3, a content rate of tungsten to a total of indium, tungsten and zinc is higher than 1.2 atomic % and lower than 30 atomic %, and a content rate of zinc to the total of indium, tungsten and zinc is higher than 1.2 atomic % and lower than 30 atomic %. There are also provided a sputtering target including this oxide sintered body, and a semiconductor device including an oxide semiconductor film formed by a sputtering method by using the sputtering target.

Provided are methods and apparatuses for processing objects by applying different forces and/or pressure levels to different portions of surfaces of these objects. An apparatus may include a flexible wall and a contact member. In some embodiments, the flexible wall forms a bladder such that the contact member is disposed inside the bladder. During operation, the flexible wall may be pressed against an object using a pressure differential across the wall (e.g., by pressurizing the bladder). This creates a first force acting on a first portion of the object surface. Furthermore, the contact member may be forced against the flexible wall and apply a second force to a second portion of the object surface through the wall. The second portion of the object surface may be a subset of the first portion or an entirely different portion.