A porous ceramic structure has a porous ceramic aggregate configured from a plurality of porous ceramic particles, and the ratio of the number of corners at locations where two other porous ceramic particles are facing a corner of a porous ceramic particle with respect to the number of corners of the porous ceramic particles included in the porous ceramic aggregate is 80% or greater.

A porous ceramic structure has a porous ceramic aggregate configured from a plurality of porous ceramic particles, and the ratio of the number of corners at locations where two other porous ceramic particles are facing a corner of a porous ceramic particle with respect to the number of corners of the porous ceramic particles included in the porous ceramic aggregate is 80% or greater.

A porous ceramic structure has a porosity of 20% to 99%, and includes one principal surface and another principal surface opposite to the one principal surface. At least one cut is formed from the one principal surface toward the other principal surface. An aspect ratio of a divided portion divided by the cut is greater than or equal to 3.

A porous ceramic structure has a porosity of 20% to 99%, and includes one principal surface and another principal surface opposite to the one principal surface. At least one cut is formed from the one principal surface toward the other principal surface. An aspect ratio of a divided portion divided by the cut is greater than or equal to 3.

A method of producing ceramic wafer includes a forming step and processing step. The processing step includes forming positioning notch or positioning, flat edge and edge profile, which avoids the ceramic wafers to have processing defect during cutting, grinding, and polishing, for increasing yield. The ceramic particles for producing ceramic wafer include nitride ceramic powder, oxide ceramic powder, and nitride ceramic powder. The ceramic wafer has low dielectric constant, insulation, and excellent heat dissipation, which can be applied for the need of semiconductor process, producing electric product and semiconductor equipment.

A method of producing ceramic wafer includes a forming step and processing step. The processing step includes forming positioning notch or positioning, flat edge and edge profile, which avoids the ceramic wafers to have processing defect during cutting, grinding, and polishing, for increasing yield. The ceramic particles for producing ceramic wafer include nitride ceramic powder, oxide ceramic powder, and nitride ceramic powder. The ceramic wafer has low dielectric constant, insulation, and excellent heat dissipation, which can be applied for the need of semiconductor process, producing electric product and semiconductor equipment.

This disclosure relates to a tool guide for a tool that shapes a workpiece. The tool guide may include a body having a contact surface configured to contact a surface of a workpiece, a tool holder positioned within the body and configured to hold a machining tool having a tool bit, the tool holder holding the machining tool in a predetermined orientation relative to the workpiece, a guide element attached to the body configured to engage a surface feature of the workpiece, and an upper opening and a lower opening in the body configured to allow the tool bit to extend beyond the contact surface and operate to remove a portion of the workpiece.

This disclosure relates to a tool guide for a tool that shapes a workpiece. The tool guide may include a body having a contact surface configured to contact a surface of a workpiece, a tool holder positioned within the body and configured to hold a machining tool having a tool bit, the tool holder holding the machining tool in a predetermined orientation relative to the workpiece, a guide element attached to the body configured to engage a surface feature of the workpiece, and an upper opening and a lower opening in the body configured to allow the tool bit to extend beyond the contact surface and operate to remove a portion of the workpiece.

A multilayer base is placed on a support. The multilayer base is cut by moving a cutting blade including an edge being linear through the multilayer base in a direction parallel to a surface of the support on which the multilayer base is placed. The cutting blade is moved with the edge inclined with respect to a moving direction of the cutting blade.

A multilayer base is placed on a support. The multilayer base is cut by moving a cutting blade including an edge being linear through the multilayer base in a direction parallel to a surface of the support on which the multilayer base is placed. The cutting blade is moved with the edge inclined with respect to a moving direction of the cutting blade.