B28D1/22

Wafer producing method
10094047 · 2018-10-09 · ·

A wafer is produced from a compound single crystal ingot having end surface. A separation plane is formed by setting the focal point of a laser beam inside the ingot at a predetermined depth from the end surface. The depth corresponds to the thickness of the wafer to be produced. The laser beam is applied to the end surface to form a modified layer parallel to the end surface and cracks extending from the modified layer, thus forming the separation plane. The ingot has first atoms having a larger atomic weight and second atoms having a smaller atomic weight, and the end surface of the ingot is set as a polar plane where the second atoms are arranged in forming the separation plane. After producing the wafer from the ingot, the first end surface is ground to be flattened.

METHOD FOR COATING FILM ABLATION AND GLASS CUTTING, WHICH USE LASER, AND FOR POST-TREATMENT
20240317629 · 2024-09-26 ·

A method for ablating a coating film, cutting glass, and performing post-treatment by using a laser according to the present invention includes coating one side or both sides of thin mother glass with a coating solution for preventing chemical contact in order to proceed with selective chemical treatment, drying the coating solution to form a coating film on one side or both sides of the thin mother glass, obtaining thin-film glasses in cell units applied to electrical and electronic products from the thin mother glass, healing a laser-cut surface of the cut thin-film glasses in cell units through selective chemical treatment of the cut thin-film glasses in cell units, cleaning the thin-film glasses in cell units, and then ablating all of a coating film formed on a surface of the thin-film glasses in cell units, and cleaning the thin-film glasses in cell units from which all of the coating film has been ablated and then chemically healing the surface of the thin-film glasses in cell units in order to eliminate defects or flaws on the surface of the thin-film glasses in cell units from which all of the coating film has been ablated.

METHOD FOR COATING FILM ABLATION AND GLASS CUTTING, WHICH USE LASER, AND FOR POST-TREATMENT
20240317629 · 2024-09-26 ·

A method for ablating a coating film, cutting glass, and performing post-treatment by using a laser according to the present invention includes coating one side or both sides of thin mother glass with a coating solution for preventing chemical contact in order to proceed with selective chemical treatment, drying the coating solution to form a coating film on one side or both sides of the thin mother glass, obtaining thin-film glasses in cell units applied to electrical and electronic products from the thin mother glass, healing a laser-cut surface of the cut thin-film glasses in cell units through selective chemical treatment of the cut thin-film glasses in cell units, cleaning the thin-film glasses in cell units, and then ablating all of a coating film formed on a surface of the thin-film glasses in cell units, and cleaning the thin-film glasses in cell units from which all of the coating film has been ablated and then chemically healing the surface of the thin-film glasses in cell units in order to eliminate defects or flaws on the surface of the thin-film glasses in cell units from which all of the coating film has been ablated.

Method for forming a crack in an edge region of a donor substrate

A method for separating a solid-body layer from a donor substrate includes providing a donor substrate having a planar surface, a longitudinal axis orthogonal to the planar surface, and a peripheral surface, and producing modifications within the donor substrate using at least one LASER beam. The at least one LASER beam penetrates the donor substrate via the peripheral surface at an angle not equal to 90? relative to the longitudinal axis of the donor substrate. The method further includes producing a stress-inducing polymer layer on the planar surface of the donor substrate, and producing mechanical stresses in the donor substrate by a thermal treatment of the stress-inducing polymer layer. The mechanical stresses produce a crack for separating the solid-body layer, and wherein the crack propagates along the modifications.

METHOD FOR MANUFACTURING A CUTTABLE CLADDING PANEL WITH A MATCHING PATTERN

The present invention relates to a cuttable cladding panel with a matching pattern, the use, and the design method thereof. The cladding panel comprises an irregular pattern (10) of elongated lines, veins, and/or strips; transverse cutting lines (20) all of them cutting through the pattern at identical transverse intersecting points symmetrical with respect to a longitudinal axis of symmetry (SL); pairs of longitudinal cutting lines (30) symmetrical with respect to the longitudinal axis of symmetry (SL), each pair of longitudinal cutting lines cutting through the pattern at identical longitudinal intersecting points; with said cutting lines crossing one another at corner points (P); wherein each transverse intersecting point (21) is at the same distance from a corner point (P) as a corresponding longitudinal intersecting point (31); with two parts obtained by cutting the cladding panel (1) along any cutting line having a matching and continuous irregular pattern (10).

Combined method for producing solids, involving laser treatment and temperature-induced stresses to generate three-dimensional solids
10079171 · 2018-09-18 · ·

The present invention relates to a method for the production of at least one three-dimensional layer of solid material, in particular for usage as wafer, and/or at least one tree-dimensional solid body. The inventive method preferably comprises the following steps: providing a work piece for removing of layers of solid material and/or the solid bodies, wherein the work piece comprises at least one exposed surface, generating defects inside the work piece, wherein the defects define at least one crack directing layer, wherein the crack directing layer describes at least one three-dimensional contour; attaching or generating a receiving layer at the exposed surface of work piece by forming a composite structure, thermal treating of the receiving layer for generating stresses inside the work piece, wherein the stresses are causing a crack propagation inside the work piece, wherein a layer of solid material or a three-dimensional solid body is separated along the crack directing layer due to the crack propagation, wherein a surface of the layer of solid material or a surface of the solid body corresponds to the three-dimensional contour of the crack directing layer.

Device and method for cleaving
10065340 · 2018-09-04 · ·

A device and method for cleaving a sample includes: creating an indentation on a top surface of the sample by applying a downward force along a vertical axis, the axis arranging perpendicularly to the top surface of the sample; providing a breaking pin and arranging the breaking pin under the sample to touch the bottom surface of the sample at a position that is directly opposite from the indentation; and, applying a downward force on the sample by providing a left side and right side breaker pin wherein the downward force comprises a left-side downward force extended through the left-side breaker pin and right-side downward force through the right side breaker pin, further the pins that provide the left-side and right-side downward force are disposed on a breaker bar and arranged to be on opposite sides of a vertical axis that extends through the indentation on the top surface.

METHOD FOR THE MATERIAL-SAVING PRODUCTION OF WAFERS AND PROCESSING OF WAFERS
20180243944 · 2018-08-30 ·

The invention relates to a method for producing a multi-layer assembly. The method according to the invention comprises at least the following steps: providing a donor substrate (2) for removing a solid layer (4), in particular a wafer; producing modifications (12), in particular by means of laser beams (10), in the donor substrate (2) in order to specify a crack course; providing a carrier substrate (6) for holding the solid layer (4); bonding the carrier substrate (6) to the donor substrate (2) by means of a bonding layer (8), wherein the carrier substrate (6) is provided for increasing the mechanical strength of the solid layer (4) for the further processing, which solid layer is to be removed; arranging or producing a stress-producing layer (16) on the carrier substrate (6); thermally loading the stress-producing layer (16) in order to produce stresses in the donor substrate (2), wherein a crack is triggered by the stress production, which crack propagates along the specified crack course in order to remove the solid layer (4) from the donor substrate (2) such that the solid layer (4) is removed together with the bonded carrier substrate (6).

Dual angle guide for ceramic cutting machines
10059023 · 2018-08-28 · ·

A dual angle guide (3) for ceramic cutting machines (1) includes a base (16); first and second positioning elements (4, 5) disposed on the base; a sector (9) calibrated with fixed angles for each positioning element; a first fixed stop (11) and a second fixed stop (12) for locating the positioning elements at a chosen angle on the respective calibrated sector (9); and rotation elements (13) for rotating the positioning elements in such a way that the positioning elements make it possible to make cuts in the ceramic piece (10) at different angles. The cuts are made by a cutting tool mounted to a sliding carriage (6). Each of the first and second positioning elements is rotatable in both a clockwise direction and an anti-clockwise direction in order to facilitate the scoring and cutting of the ceramic piece at various angles.

WAFER PRODUCING METHOD
20180237947 · 2018-08-23 ·

A wafer is produced from a compound single crystal ingot having end surface. A separation plane is formed by setting the focal point of a laser beam inside the ingot at a predetermined depth from the end surface. The depth corresponds to the thickness of the wafer to be produced. The laser beam is applied to the end surface to form a modified layer parallel to the end surface and cracks extending from the modified layer, thus forming the separation plane. The ingot has first atoms having a larger atomic weight and second atoms having a smaller atomic weight, and the end surface of the ingot is set as a polar plane where the second atoms are arranged in forming the separation plane. After producing the wafer from the ingot, the first end surface is ground to be flattened.