A method for manufacturing a wafer from an ingot includes: holding the ingot; applying a laser beam having a wavelength that transmits through the ingot from a front surface of the ingot and positioning a focal point of the laser beam at a position deeper than the front surface of the ingot to form a modified region, and relatively feeding the ingot and the focal point for processing to form a separation layer including a plurality of the modified regions inside the ingot; separating, from the ingot, a workpiece including the front surface of the ingot as the wafer, with the separation layer as a start point; and grinding a separation surface of the wafer to remove the modified region. In the applying, a depth of the focal point forming the modified region is changed to form the separation surface into a three-dimensional shape rather than a horizontal surface.

Disclosed are an upper jacking structure, a half-slitting machine and a half-slitting method. The upper jacking structure includes a lower jacking block, a cutting assembly, a first linear reciprocating device, an upper jacking block and an auxiliary tensioner. The lower jacking block is located below the upper jacking block, a clamping space is formed between the lower jacking block and the upper jacking block, a cutting end of the cutting assembly moves in a vertical direction and a horizontal direction in and out of the clamping space, a movable end of the first linear reciprocating device moves in the vertical direction, and the upper jacking block is provided on the movable end of the first linear reciprocating device; the upper jacking block has a first jacking surface provided with a first jacking head and a second jacking head at either side of a center line of the first jacking surface.

Embodiments of the present disclosure are directed to a cleaning device for a net monitor and a slicer equipped with the cleaning device. The cleaning device includes a cleaning member. The cleaning member is constructed with a cavity and a plurality of the tunnels provided at one end of the cavity. The tunnels diverge from one end of the cavity to one side of the outer end face of the cleaning member. Angles between axes of the tunnels and an axis of the cavity are different from each other.