The present subject matter discloses a longitudinal silicon ingot slicing apparatus for lateral slicing of cylindrical ingot to maximize resulting chips yield as compared to the conventional transverse slicing of ingot. The resulting rectangular wafers made from lateral slicing of ingot maximizes yield as by the lateral slicing of ingot, overall chips per wafer ratio gets increased as compared to transversal cutting while the said apparatus and method decreases waste due to conflict between chip and wafer geometry. The novel apparatus of longitudinal slicing of cylindrical ingot is comprising of a wire wounded around a wire reels and a plurality of grooved rollers to form a wire raw to slice the cylindrical silicon ingot. A motors are connected with the wire reels and with at least one grooved roller to slide the wire row back and forth to cut the cylindrical ingot. A work feed table is also configured along with the JIG fixture that holds the cylindrical ingot as well as align the wire raw during slicing.

The invention discloses a method for cutting a substrate wafer from an indium phosphide crystal, and belongs to the field of semiconductor substrate preparation, comprises the following steps of: 1) orientating, cutting the head and the tail of a crystal bar, adjusting the orientation and trying to cut the crystal bar until a wafer with a required crystal orientation cut, wherein the cutting end face is an orientation end face; 2) multi-wire cutting, on a multi-wire cutting apparatus, dividing a crystal bar parallel to an orientation end face into wafers; 3) cleaning, cleaning the wafer until no residue and no dirt existing on the surface; 4) circle cutting, performing circle cutting on the wafer to cut the desired crystal orientation area. According to the technical scheme, for the indium phosphide crystal bar which is difficult to control in diameter and easy to twinning/ poly in the growth process, a barreling process which may grind and remove a large amount of InP materials is abandoned, the crystal bar is multi-wire cut into a wafer, and then the substrate wafer which is available in the crystal direction close to the standard size is cut from the wafer to the maximum extent, so that the wafer output can be greatly increased, and the material loss and the waste can be reduced.

Systems and methods for controlling the surface profiles of wafers sliced in a wire saw machine. The systems and methods are generally operable to alter the nanotopology of wafers sliced from an ingot by controlling the shape of the wafers. The shape of the wafers is altered for example by changing the temperature of a temperature-controlling fluid circulated in fluid communication with side walls attached to a fixed bearing sidewall of the wire saw.

A wafer production method includes a separation layer forming step of positioning, from an end surface, the focal point of a laser beam with a wavelength having transmissibility with respect to a semiconductor ingot, at a depth corresponding to the thickness of a wafer to be produced, and irradiating the ingot with the laser beam to form a separation layer, a manufacturing history forming step of positioning the focal point of a laser beam with such a characteristic as not giving damage to a wafer to be produced next, to the upper surface of a region in which a device is not formed in the wafer to be produced, and irradiating the ingot with the laser beam to form a manufacturing history by ablation processing, and separating the wafer to be produced from the ingot using the separation layer as the point of origin, to produce the wafer.

A wafer production method includes a separation layer forming step of positioning, from an end surface, the focal point of a laser beam with a wavelength having transmissibility with respect to a semiconductor ingot, at a depth corresponding to the thickness of a wafer to be produced, and irradiating the ingot with the laser beam to form a separation layer, a manufacturing history forming step of positioning the focal point of a laser beam with such a characteristic as not giving damage to a wafer to be produced next, to the upper surface of a region in which a device is not formed in the wafer to be produced, and irradiating the ingot with the laser beam to form a manufacturing history by ablation processing, and separating the wafer to be produced from the ingot using the separation layer as the point of origin, to produce the wafer.

In order to respond flexibly to various processing modes, such as forming curved surface shapes, when cutting a workpiece using a wire saw, this wire saw device (1) is provided with: a single robot arm (2) that is capable of moving freely by means of multi-axis control; a wire saw unit (3) that is detachably connected to the robot arm (2) via a tool changer (7); a wire (8) that spans a plurality of pulleys supported within the wire saw unit (3); and a workpiece cutting zone (20) that is established between the pulleys. The workpiece is cut to a prescribed shape by moving the robot arm (2) in a preset direction while running the wire (8) of the wire saw unit (3) and pressing the wire (8) against the supported workpiece.

In order to respond flexibly to various processing modes, such as forming curved surface shapes, when cutting a workpiece using a wire saw, this wire saw device (1) is provided with: a single robot arm (2) that is capable of moving freely by means of multi-axis control; a wire saw unit (3) that is detachably connected to the robot arm (2) via a tool changer (7); a wire (8) that spans a plurality of pulleys supported within the wire saw unit (3); and a workpiece cutting zone (20) that is established between the pulleys. The workpiece is cut to a prescribed shape by moving the robot arm (2) in a preset direction while running the wire (8) of the wire saw unit (3) and pressing the wire (8) against the supported workpiece.

The cutting method is a cutting method for cutting a workpiece using a wire tool, including: supplying a slurry containing abrasive grains having an electrical dielectric property to a region of the workpiece into which the wire tool cuts; generating an alternating electric field in a region between the wire tool and the workpiece; and running the wire tool along a direction in which the wire tool is drawn while the wire tool abuts on the workpiece.

An object is to provide a SiC wafer in which a detection rate of an optical sensor can improved and a SiC wafer manufacturing method.

The method includes: a satin finishing process S141 of satin-finishing at least a back surface 22 of a SiC wafer 20; an etching process 21 of etching at least the back surface 22 of the SiC wafer 20 by heating under Si vapor pressure after the satin finishing process S141; and a mirror surface processing process S31 of mirror-processing a main surface 21 of the SiC wafer 20 after the etching process S21. Accordingly, it is possible to obtain a SiC wafer having the mirror-finished main surface 21 and the satin-finished back surface 22.

A method and device for simulating a production duration of a silicon-wafer slicer, including: constructing a slicer simulating model, wherein the slicer simulating model includes process-step data of the slicer, and the process-step data include: a loading process step, a cutting process step, a discharging process step, a rinsing process step, a waiting process step, a broken-line replacing process step, a guide-pulley replacing process step, a home-roll replacing process step and a paying-off-wheel replacing process step; in the slicer simulating model, according to a predetermined rule, obtaining a process-step-to-be-executed datum; according to historical data, for the process-step-to-be-executed datum, assigning duration data that individually correspond to the process-step-to-be-executed data, wherein the historical data include: historical duration data that individually correspond to the process-step data of the slicer; and executing sequentially the process steps in the process-step-to-be-executed data, and obtaining a sum of the duration data of the process steps.