Methods of recycling silicon swarf into electronic grade polysilicon or metallurgical-grade silicon are described herein are described. In an example, a method includes cutting a silicon ingot and recovering silicon swarf having a first purity from the cutting process. The recovered silicon is purified in an upgraded metallurgical silicon process to produce electronic grade polysilicon particles having a second purity higher than the first purity. The upgraded metallurgical silicon process can include dissolving the recovered silicon particles in a molten aluminum metal smelt.

Method for cutting crystal boules using diamond wire, wherein this boule is driven about a main axis, a cutting wire is held taut and driven through a temporary drum immobilising each boule in position with respect to the main axis throughout the entire cutting operation, this temporary drum being made by overmoulding a coating material on at least one boule bonded onto a sacrificial core, the cutting being followed by the slicing of cut rings from which are detached, particularly using heat, crystalline plates with parallel faces.

A method for manufacturing an ingot block in which an ingot of a silicon single crystal pulled up by a Czochralski process is cut and subjected to outer periphery grinding to manufacture an ingot block of the silicon single crystal, the method including: a step of measuring a radial center position of the ingot at one or more locations along a longitudinal direction of the ingot, a step of setting a reference position at which an offset amount of the measured radial center position of the ingot is equal to or less than a predetermined eccentricity amount, a step of cutting the ingot into the ingot blocks based on the set reference position, and a step of performing outer periphery grinding on each of the cut ingot blocks.

A method for manufacturing an ingot block in which an ingot of a silicon single crystal pulled up by a Czochralski process is cut and subjected to outer periphery grinding to manufacture an ingot block of the silicon single crystal, the method including: a step of measuring a radial center position of the ingot at one or more locations along a longitudinal direction of the ingot, a step of setting a reference position at which an offset amount of the measured radial center position of the ingot is equal to or less than a predetermined eccentricity amount, a step of cutting the ingot into the ingot blocks based on the set reference position, and a step of performing outer periphery grinding on each of the cut ingot blocks.

A method for slicing an ingot, including: forming a wire row by a wire spirally wound between a plurality of wire guides and configured to travel in an axial direction; and pressing an ingot against the wire row while supplying a contact portion between the ingot and the wire with a slurry from a nozzle, thereby slicing the ingot into wafers. The slurry is supplied such that slurries whose temperatures are separately controlled by two or more lines of heat exchangers are respectively supplied from two or more sections of the nozzle which are orthogonal to a travelling direction of the wire row. Consequently, a wire saw and a method for slicing an ingot are provided which enable separate control of wafer shapes depending on ingot-slicing positions.

An ultrasonic peening-type integrated machining method for cutting and extrusion includes: applying transverse ultrasonic vibration or a vibration component, which is vertical to a cutting speed direction to a cutting tool on a machine tool; setting a cutting parameter and an ultrasonic vibration parameter such that a dynamic negative clearance angle is generated in a cutting procedure and a flank face of the cutting tool conducts ultrasonic peening extrusion on the surface of the workpiece; setting an extrusion overlap ratio; setting a wear standard of flank faces extruded by the cutting tool; controlling a vibration cutting trajectory phase difference of the cutting tool during two adjacent rotations; and turning on the machine tool in order to ensure that cutting and surface extrusion strengthening of the workpiece are completed in one procedure without separate strengthening procedures. The method conducts extrusion strengthening on the surface of the workpiece while cutting the workpiece.

A metal wire containing tungsten is provided. A tungsten content of the metal wire is at least 90 wt %. A tensile strength of the metal wire is at least 4000 MPa. An elastic modulus of the metal wire is at least 350 GPa and at most 450 GPa. A diameter of the metal wire is at most 60 μm. An average crystal grain size of the metal wire in a cross-section orthogonal to an axis of the metal wire is at most 0.20 μm.

A monocrystalline silicon micro-nano dual-scale anti-reflection texture and a preparation method therefor. The preparation method combines nanosecond-laser-assisted waterjet near-damage-free processing and femtosecond laser scanning, and subsurface damage caused by a re-cast layer phenomenon and a hot crack in a monocrystalline silicon laser texturing process can be effectively reduced by combining a nanosecond-laser-assisted waterjet near-damage-free processing technology and an ultra-short pulse femtosecond laser cold processing technology; and meanwhile, a micro-scale frame structure and a nano-scale structure can be flexibly modified respectively by adjusting nanosecond-laser-assisted waterjet technological parameters and femtosecond laser technological parameters, a geometry light trapping effect and an effective dielectric effect can be achieved in a micro-nano dual-scale hybrid structure at the same time, and surface reflection is reduced.

A monocrystalline silicon micro-nano dual-scale anti-reflection texture and a preparation method therefor. The preparation method combines nanosecond-laser-assisted waterjet near-damage-free processing and femtosecond laser scanning, and subsurface damage caused by a re-cast layer phenomenon and a hot crack in a monocrystalline silicon laser texturing process can be effectively reduced by combining a nanosecond-laser-assisted waterjet near-damage-free processing technology and an ultra-short pulse femtosecond laser cold processing technology; and meanwhile, a micro-scale frame structure and a nano-scale structure can be flexibly modified respectively by adjusting nanosecond-laser-assisted waterjet technological parameters and femtosecond laser technological parameters, a geometry light trapping effect and an effective dielectric effect can be achieved in a micro-nano dual-scale hybrid structure at the same time, and surface reflection is reduced.

The present disclosure relates to an alloy wire rod and a preparation method and application thereof. The alloy wire rod is made of a tungsten alloy, and the tungsten alloy contains tungsten and an oxide of cerium. The alloy wire rod has a wire diameter of equal to or less than 100 m; and the alloy wire rod has a tensile strength of greater than 3,800 MPa. The wire diameter of the alloy wire rod is equal to or less than 60 m; the diameter of a push-pull core wire of the alloy wire rod is less than 350 m; the elastic ultimate strength of the alloy wire rod is greater than 2,500 MPa; and the tensile strength of the alloy wire is greater than 4,200 MPa. In the present disclosure, the alloy wire rod having ultra-high strength and good toughness is obtained by doping an oxide of cerium.