A peeling apparatus includes: an ingot holding unit holding an ingot with an ingot portion corresponding to a wafer being faced up; an ultrasonic wave oscillating unit which has an end face facing the ingot portion corresponding to the wafer and oscillates an ultrasonic wave; a water supplying unit supplying water to an area between the ingot portion corresponding to the wafer and the end face of the ultrasonic wave oscillating unit; and a peeling unit that holds the ingot portion corresponding to the wafer with suction and peels off the wafer from the ingot.

A scribe line is formed on a first surface of a nitride ceramic base material by a laser. Next, the nitride ceramic base material is divided along the scribe line. The scribe line includes a plurality of recessed portions. The plurality of recessed portions are formed in a row on the first surface of the nitride ceramic base material. A depth of each of the plurality of recessed portions is equal to or greater than 0.70 times and equal to or smaller than 1.10 times an opening width of each of the plurality of recessed portions. The opening width of each of the plurality of recessed portions is equal to or greater than 1.00 times and equal to or smaller than 1.10 times an inter-center distance of the plurality of recessed portions.

A scribe line is formed on a first surface of a nitride ceramic base material by a laser. Next, the nitride ceramic base material is divided along the scribe line. The scribe line includes a plurality of recessed portions. The plurality of recessed portions are formed in a row on the first surface of the nitride ceramic base material. A depth of each of the plurality of recessed portions is equal to or greater than 0.70 times and equal to or smaller than 1.10 times an opening width of each of the plurality of recessed portions. The opening width of each of the plurality of recessed portions is equal to or greater than 1.00 times and equal to or smaller than 1.10 times an inter-center distance of the plurality of recessed portions.

A slurry sprayer for supplying a slurry to a wire saw during ingot slicing is disclosed. The slurry sprayer includes a main body and a cover plate that is detachable from the main body for cleaning the slurry sprayer. In some embodiments, the slurry sprayer includes an adjustable support that allows the incline angle of the sprayer to be adjusted and allows the vertical and horizontal position of the slurry sprayer to be adjusted. In some embodiments, the slurry sprayer includes two feed openings to allow the slurry pressure to be more equalized across the slurry sprayer.

A method for manufacturing a semiconductor device includes a step of preparing a semiconductor wafer source which includes a first main surface on one side, a second main surface on the other side and a side wall connecting the first main surface and the second main surface, an element forming step of setting a plurality of element forming regions on the first main surface of the semiconductor wafer source, and forming a semiconductor element at each of the plurality of element forming regions, and a wafer source separating step of cutting the semiconductor wafer source from a thickness direction intermediate portion along a horizontal direction parallel to the first main surface, and separating the semiconductor wafer source into an element formation wafer and an element non-formation wafer after the element forming step.

Provided is a method for manufacturing at least one solar cell, a method for manufacturing a monocrystalline silicon wafer and a photovoltaic module. The method for manufacturing a monocrystalline silicon wafer includes: providing a monocrystalline silicon rod; squaring the monocrystalline silicon rod to form a quasi-square silicon rod with quasi-square cross-section having an arc, a length of the arc being not less than 15 mm; slicing the quasi-square silicon rod to form at least one quasi-square silicon wafer having the arc. The method for manufacturing at least one solar cell includes: using the method described above to obtain a quasi-square silicon wafer having an arc; forming a first solar cell by processing the quasi-square silicon wafer; scribing the first solar cell to obtain a square-shaped sub-solar cell and at least one strip-shaped sub-solar cell. The above methods improve the utilization rate of the monocrystalline silicon rod and reduce production cost.

Provided is a method for manufacturing at least one solar cell, a method for manufacturing a monocrystalline silicon wafer and a photovoltaic module. The method for manufacturing a monocrystalline silicon wafer includes: providing a monocrystalline silicon rod; squaring the monocrystalline silicon rod to form a quasi-square silicon rod with quasi-square cross-section having an arc, a length of the arc being not less than 15 mm; slicing the quasi-square silicon rod to form at least one quasi-square silicon wafer having the arc. The method for manufacturing at least one solar cell includes: using the method described above to obtain a quasi-square silicon wafer having an arc; forming a first solar cell by processing the quasi-square silicon wafer; scribing the first solar cell to obtain a square-shaped sub-solar cell and at least one strip-shaped sub-solar cell. The above methods improve the utilization rate of the monocrystalline silicon rod and reduce production cost.

The present disclosure provides a method and a device for cutting a solar silicon wafer, and a storage medium, which relate to the technical field of crystalline silicon cutting and can solve a problem of high labor intensity of operators caused by repeated operation in solar silicon wafer cutting, improve production efficiency and reduce misoperation. A technical solution is specifically as follows: loading materials to be cut to a section cutter (101); adjusting a cutting wire mesh according to preset requirements, starting a cutting procedure when cutting conditions are met, and cutting the materials to be cut (102); generating prompt information for completed cutting after the cutting is completed (103); and unloading cut materials from the section cutter according to the prompt information for the completed cutting (104). The present disclosure is used for silicon wafer cutting.

A method for manufacturing a semiconductor device includes a step of preparing a semiconductor wafer source which includes a first main surface on one side, a second main surface on the other side and a side wall connecting the first main surface and the second main surface, an element forming step of setting a plurality of element forming regions on the first main surface of the semiconductor wafer source, and forming a semiconductor element at each of the plurality of element forming regions, and a wafer source separating step of cutting the semiconductor wafer source from a thickness direction intermediate portion along a horizontal direction parallel to the first main surface, and separating the semiconductor wafer source into an element formation wafer and an element non-formation wafer after the element forming step.

Provided are a method for cutting silicon rod and an apparatus for diamond multi-wire cutting, the method for cutting silicon rod includes: using a cooling pipe to supply cutting fluid to the diamond wire, and using the diamond wire to cut the silicon rod, wherein the distance between the supply position of the cutting fluid and the periphery of the silicon rod is 10-20 mm; or adjusting the new wire running amount and/or feed speed at different positions of the crystal cross section during the cutting process.