A method of producing a laminated article comprising placing a first metal skin, a core, and a second metal skin freely onto each other as discrete layers to provide a layered component; and forming the layered component into a shaped article via a die prior to producing a laminated article by applying pressure and heat to the shaped article, wherein at least the first skin moves relative to the core and/or second skin during the forming.

A reusable surgical implement is provided that is formed of a core positioned within an enclosure. The core is formed of a suitable rigid, and optionally flexible material to enable the implant to conform to the desired use for the implement in a surgical procedure. The material forming the enclosure is also stretchable and flexible to accommodate the configuration and/or any flexing of the core, and is biologically inert to enable the implant to be sterilized after use for use in subsequent surgical procedures while protecting the material forming the core. The enclosure can be molded around the core in separate portions or components using multiple molding steps to form an enclosure with the desired attributes.

A gate-all around fin double diffused metal oxide semiconductor (DMOS) devices and methods of manufacture are disclosed. The method includes forming a plurality of fin structures from a substrate. The method further includes forming a well of a first conductivity type and a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures. The method further includes forming a source contact on an exposed portion of a first fin structure. The method further comprises forming drain contacts on exposed portions of adjacent fin structures to the first fin structure. The method further includes forming a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type.

A joining structure includes a first member, a second member of a material different from that of the first member, and a separation mechanism provided between the first member and the second member and that separates the first member and the second member from each other, wherein a resin is filled into the space between the edge of at least one member among the first member and the second member, and the other member.

A gate-all around fin double diffused metal oxide semiconductor (DMOS) devices and methods of manufacture are disclosed. The method includes forming a plurality of fin structures from a substrate. The method further includes forming a well of a first conductivity type and a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures. The method further includes forming a source contact on an exposed portion of a first fin structure. The method further comprises forming drain contacts on exposed portions of adjacent fin structures to the first fin structure. The method further includes forming a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type.

A three-dimensional electronic, biological, chemical, thermal management, and/or electromechanical apparatus can be configured by depositing one or more layers of a three-dimensional structure on a substrate. Such a three-dimensional structure can include one or more internal cavities using an additive manufacturing system enhanced with a range of secondary embedding processes. The three-dimensional structure can be further configured with structural integrated metal objects spanning the internal cavities (possibly filled with air or even evacuated) of the three-dimensional structure for enhanced electromagnetic properties.

A laminate including a metal substrate having a chemically etched surface and a fluoroelastomer layer laminated in contact with the chemically etched surface or laminated in contact with a surface of a fluororesin layer laminated in contact with the chemically etched surface, and a gate valve including the laminate, are provided.

A gate-all around fin double diffused metal oxide semiconductor (DMOS) devices and methods of manufacture are disclosed. The method includes forming a plurality of fin structures from a substrate. The method further includes forming a well of a first conductivity type and a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures. The method further includes forming a source contact on an exposed portion of a first fin structure. The method further comprises forming drain contacts on exposed portions of adjacent fin structures to the first fin structure. The method further includes forming a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type.

A vehicle interior board which has less deterioration and peeling near an end portion of a metal plate, has high quality, is thin, lightweight, and has high strength and excellent productivity. The vehicle interior board includes a pair of metal plates and a foamed polyurethane layer formed between the pair of metal plates. At the peripheral edge portion of the vehicle interior board, the foamed polyurethane layer covers peripheral end portions of the metal plates and is formed flush with outer surfaces of the metal plates. This makes it possible to suppress oxidation of the peripheral end portions which are cutting surfaces of the metal plates. Further, bonding is good between the metal plates and the foamed polyurethane layer. Further, it is possible to prevent peeling of the metal plates, chipping of the foamed polyurethane layer, and the like. Furthermore, it is easy to demold a vehicle interior board.

A method and apparatus for forming a radius filler. A lattice is formed of connecting elongate members having a three-dimensional shape of the radius filler. A resin is placed within the lattice.