A method of manufacturing a coated article comprises injecting a feedstock with a polymer resin to provide a resin-injected feedstock, pulling the resin-injected feedstock through a pultrusion die to form a pultrusion substrate having one or more profile surfaces, adhering an adhesive material comprising a thermoplastic polyurethane onto at least a portion the one or more profile surfaces to form one or more adhesive tie layers on the pultrusion substrate, and applying one or more coating materials onto the one or more adhesive tie layers to form one or more coating layers on the one or more adhesive tie layers to provide a coated pultrusion article, wherein an adhesion strength between the one or more coating layers and the one or more adhesive tie layers is higher than a corresponding adhesion strength would be between the one or more coating layers and the pultrusion substrate.

A light assembly and method of forming light assemblies includes a flexible light layer, a thermoplastic housing, and an IMC layer. The flexible light layer has a flexible substrate, a printed circuit, and a plurality of LEDs extending outward from the flexible substrate. The IMC layer is formed opposite the flexible light layer from the thermoplastic housing and covers the LEDs. Forming may include placing the flexible light layer within a mold cavity, injecting the thermoplastic structure on one side of the flexible light layer, and injecting the IMC layer on the opposite side of the flexible light layer from the thermoplastic structure. Injecting the thermoplastic structure into the mold cavity may change the shape of the flexible light layer. Datum features of the flexible light layer may align the thermoplastic structure relative to the datum features.

A polyester film comprises a polyester (A) composed mainly of polybutylene terephthalate and a polyester (B) composed mainly of polyethylene terephthalate, wherein a mass ratio (A/B) between the polyesters (A) and (B) is 70/30 to 55/45, a dry heat shrinkage rate (A) through heat treatment at 160° C. for 30 minutes is 20% or less in any of four directions on a film surface (0°, 45°, 90° and 135®), a difference between a maximum value and a minimum value of these dry heat shrinkage rates is 5% or less, a dry heat shrinkage rate (B) through heat treatment at 200° C. for 15 minutes is 35% or less in any of the four directions, a difference between a maximum value and a minimum value of these dry heat shrinkage rates is 5% or less, and a thickness variation in the four directions is 10% or less.

The device intended to be thermoformed comprises a substrate capable of being thermoformed and an electrically conductive member integral with the said substrate. The electrically conductive member comprises: electrically conductive particles, an electrically conductive material, electrically conductive elements of elongated shape. The electrically conductive material has a melting point which is strictly less than the melting point of the electrically conductive particles and than the melting point of the elements of elongated shape.

The invention relates to a multilayered, flexible, flat semi-finished product or component with a segment-like surface and a method for its manufacture, as well as a multidimensionally curved moulded part made therefrom and a method for the manufacture of such a component.

Disclosed is a method for manufacturing packaging including a container. The method includes: an operation of forming the container via blow molding or stretch blow molding from a plastics preform, an operation of treating an inner surface of the container, during which a thin barrier layer is formed on the inner surface via plasma-enhanced chemical vapor deposition; an operation of printing on an outer surface of the container, during which ink is deposited on the outer surface to form a decorative and/or informative inscription thereon.

A gate-all around fin double diffused metal oxide semiconductor (DMOS) devices and methods of manufacture are disclosed. The method includes forming a plurality of fin structures from a substrate. The method further includes forming a well of a first conductivity type and a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures. The method further includes forming a source contact on an exposed portion of a first fin structure. The method further comprises forming drain contacts on exposed portions of adjacent fin structures to the first fin structure. The method further includes forming a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type.

The first aspect of the present invention provides a foamed structure, comprising: a first foamed body extending in a first direction; a second foamed body extending in the first direction and facing the first foamed body with a gap interposed therebetween; and a reinforcement disposed in the gap between the first foamed body and the second foamed body, the reinforcement having an elongated shape, wherein the first foamed body has a portion overlapping with the second foamed body in the first direction view.

The present invention provides an imprint apparatus that performs an imprint process of forming a pattern of an imprint material on a processing target region on a substrate by using a mold, including a digital mirror device including two-dimensionally arrayed mirror elements and configured to irradiate the substrate with light reflected by the mirror elements, a measurement unit configured to measure, for each of a plurality of segments obtained by dividing a region in which the mirror elements are arrayed so as to include a plurality of the mirror elements, a light amount of light emitted from each segment, and a control unit configured to control the mirror elements included in each segment based on a measurement result of the measurement unit.

A gate-all around fin double diffused metal oxide semiconductor (DMOS) devices and methods of manufacture are disclosed. The method includes forming a plurality of fin structures from a substrate. The method further includes forming a well of a first conductivity type and a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures. The method further includes forming a source contact on an exposed portion of a first fin structure. The method further comprises forming drain contacts on exposed portions of adjacent fin structures to the first fin structure. The method further includes forming a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type.