The present invention relates to a laminate film including a resin layer having a thickness of from 10 μm to 125 μm; and a toner layer formed on one surface of the resin layer, in which the resin layer is formed from a resin material having a glass transition temperature of 130° C. or higher, the toner layer has a plurality of voids, and when a value defined by the following formula (S1) using the void area ratio, which represents the ratio of the area of exposed voids, for the respective faces of the surface of the toner layer and a cross section of the toner layer, is designated as porosity, and when two void area ratios respectively corresponding to the cross sections of the toner layer in two orthogonally intersecting directions are used as the void area ratios of the cross sections of the toner layer, the porosities respectively calculated according to the two void area ratios are both from 0.01% to 0.40%.

[00001]$\begin{array}{cc}\mathrm{Porosity}.Math..Math.\left(\%\right)=\frac{\mathrm{Void}.Math..Math.\mathrm{area}.Math..Math.\mathrm{ratio}.Math..Math.\mathrm{of}.Math..Math.\mathrm{cross}.Math..Math.\mathrm{section}.Math..Math.\left(\%\right)}{100}\times \frac{\mathrm{Void}.Math..Math.\mathrm{area}.Math..Math..Math.\mathrm{ratio}.Math..Math.\mathrm{of}.Math..Math.\mathrm{surface}.Math..Math.\left(\%\right)}{100}\times 100& \end{array}$

The deterioration of the resin base materials in the bonded structure is prevented. In a bonded structure containing two base materials at least one of which is a resin, an oxide which contains either P or Ag, V, and Te, and are formed by softening on the two base materials, bond the two base materials. In addition, in a method for producing a bonded structure containing two base materials at least one of which is a resin containing: supplying an oxide containing either P or Ag, V, and Te to the base material; and applying electromagnetic waves to the oxide, whereby the oxide, which soften on the substrates, bond the two base material.

A semiconductor device includes a substrate including, on a surface thereof, a first conductive pad and a first insulating layer formed around the first conductive pad, a semiconductor chip including, on a surface thereof, a second conductive pad and a second insulating layer around the second conductive pad, an intermediate layer formed between the substrate and the semiconductor chip, and including a conductive portion between the first and second conductive pads, and an insulating portion between the first and second insulating layers, and a molecular bonding layer formed between the substrate and the intermediate layer, and including at least one of a first molecular portion covalently bonded to a material of the first conductive pad and a material of the conductive portion, and a second molecular portion covalently bonded to a material of the first insulating layer and a material of the insulating portion.

Manufacturing a semiconductor apparatus includes preparing a support-base attached encapsulant including a thermosetting resin layer stacked as an encapsulant on a support base, coating a semiconductor-device mounting surface of a substrate on which semiconductor devices are mounted, or a semiconductor-device forming surface of a wafer on which semiconductor devices are formed with the thermosetting resin layer of the support-base attached encapsulant, heating and curing the thermosetting resin layer to collectively encapsulate the semiconductor-device mounting surface of the substrate or the semiconductor-device forming surface of the wafer, and cutting the encapsulated substrate or wafer by dicing. Coating includes surrounding a side face of the support-base attached encapsulant by a frame mechanism, holding the substrate or the wafer with the substrate or the wafer facing and spaced apart from the thermosetting resin layer of the support-base attached encapsulant, and vacuum laminating the support-base attached encapsulant together with the substrate or the wafer.

Disclosed is a semiconductor package polyimide film, which may prevent the stripping of a thermoplastic polyimide layer by reducing a difference in the average coefficient of linear thermal expansion between a substrate film and the thermoplastic polyimide layer, and may be readily detached after a reflow process is completed since the thermoplastic polyimide layer to be attached to a lead frame has a glass transition temperature less than or equal to a reflow process temperature.

A method of producing microelectronic components includes forming a functional layer system; applying a laminar carrier to the functional layer system; attaching a workpiece to a workpiece carrier; utilizing incident radiation of a laser beam is focused in a boundary region between a growth substrate and the functional layer system, and a bond between the growth substrate and the functional layer system in the boundary region is weakened or destroyed; separating a functional layer stack from the growth substrate, wherein a vacuum gripper having a sealing zone that circumferentially encloses an inner region is applied to the reverse side of the growth substrate, a negative pressure is generated in the inner region such that separation of the functional layer stack from the growth substrate is initiated in the inner region; and the growth substrate held on the vacuum gripper is removed from the functional layer stack.

The substrate for surface protective sheet of the present invention is a substrate for surface protective sheet including a support film and an antistatic layer provided on one face of the support film, wherein a stress relaxation rate of the substrate for surface protective sheet is 60% or more; the antistatic layer is one formed by curing an antistatic layer-forming composition containing a curing component and a metal filler; and the content of a metal filler is 55 mass % or more relative to the total mass of the curing component and the metal filler, and the curing component includes a urethane acrylate oligomer.

To provide a glass laminate of which an increase of the peel strength between a glass substrate and a silicone resin layer is suppressed even after a high temperature heat treatment, and from which the glass substrate can readily be separated. A glass laminate comprising a support substrate, a silicone resin layer and a glass substrate in this order, with a peel strength at the interface between the support substrate and the silicon resin layer higher than the peel strength at the interface between the silicone resin layer and the glass substrate, wherein a silicone resin in the silicone resin layer is a cured product obtained by reacting an alkenyl-group containing organopolysiloxane (A) and a hydrogen polysiloxane (B) having a hydrosilyl group, and the mixing molar ratio of the hydrosilyl groups in the hydrogen polysiloxane (B) to the alkenyl groups in the alkenyl group-containing organopolysiloxane (A) (that is, number of mols of hydrosilyl groups/number of mols of alkenyl groups) is from 0.15/1 to 0.65/1.

An object of the present invention is to provide a laminate having a fiber layer comprising ultrafine cellulose fibers and a resin layer, wherein the two layers have more excellent adhesion properties. The present invention relates to a laminate having at least one fiber layer comprising cellulose fibers with a fiber width of 1000 nm or less, and at least one resin layer that is contacted with one surface of the fiber layer, wherein the resin layer has an adhesion aid.

The present invention relates to a bonding method for connecting a first wafer and a second wafer, wherein firstly a first adhesive layer is deposited onto a surface of the first wafer. Furthermore, a second adhesive layer is deposited onto the first adhesive layer, and the two adhesive layers are structured by way of selective removal of both adhesive layers in at least one predefined region of the first wafer, Moreover, the first wafer is connected to the second wafer by way of pressing a surface of the second wafer onto the second adhesive layer, wherein the second adhesive layer is more flowable that the first adhesive layer on connecting the first wafer to the second wafer.