A packaging material for a power storage device, the packaging material including a structure in which at least a substrate protective layer, a substrate layer, an adhesive layer, a metal foil layer, a sealant adhesive layer, and a sealant layer are laminated in this order, wherein the substrate protective layer is a cured product of a raw material containing a polyester resin or an acrylic resin, and a curing agent; the polyester resin or the acrylic resin has reactive groups reactive with the curing agent at a terminal position and/or in a side chain; the curing agent contains an isocyanate other than an alicyclic isocyanate, and an alicyclic isocyanate; and the ratio ([a]/[b]) of the weight of the isocyanate other than an alicyclic isocyanate [a] to the weight of the alicyclic isocyanate [b] is 99/1 to 80/20.

A polypropylene film which is capable of suppressing blocking in a rolled polypropylene film. The polypropylene film has a first surface and a second surface, contains a polypropylene resin as a main component, and is configured such that: the Svk value (SvkA) of the first surface is 0.005 m or more and 0.030 m or less; the Spk value (SpkA) of the first surface is more than 0.035 m and 0.080 m or less; the Svk value (SvkB) of the second surface is 0.005 m or more and 0.030 m or less; and the Spk value (SpkB) of the second surface is 0.015 m or more and 0.035 m or less.

A resin component includes a natural wooden veneer, a light-transmitting ink printed layer, an adhesive layer, and a light-transmitting reinforcement layer. The veneer includes a sparseness portion and a denseness portion of conduits, is 50% or more and 80% or less in light transmittance, and is 0.1 mm or more and 0.6 mm or less in plate thickness. The light-transmitting ink printed layer is formed on a first surface of the veneer, is 2 m or more and 20 m or less in thickness, and contains a pigment or a dye. The adhesive layer is formed on a second surface which is an opposite side of the first surface of the veneer. The reinforcement layer is formed on a surface, which is an opposite side of the veneer, of the adhesive layer.

Systems, methods, and devices of the various embodiments provide for the creation of holey graphene meshes (HGMs) and composite articles including HGMs. Various embodiments provide solvent-free methods for creating arrays of holes on holey graphene-based articles formed from dry compression (such as films, discs, pellets), thereby resulting in a HGM. In further embodiments, a HGM can used as part of a composite, such as by: 1) embedding a HGM into another matrix material such as carbon, polymer, metals, metal oxides, etc; and/or (2) the HGM serving as a matrix by filling the holes of the HGM or functionalizing the HGM body with another one or more materials. In various embodiments, HGM can also be made as a composite itself by creating holes on dry-compressed articles pre-embedded with one or more other materials.

A polycarbonate-polysiloxane includes specific amounts of first carbonate units having the structure ##STR00001##
wherein R.sup.1 is a C.sub.6-C.sub.16 divalent aromatic group, second carbonate units having the structure ##STR00002##
wherein R.sup.2 is a C.sub.17-C.sub.40 divalent aromatic group having the structure ##STR00003##
wherein R.sup.f, R.sup.g, R.sup.h, R.sup.i, R.sup.j, R.sup.k, X.sup.b, j, m, n, x, and y are defined herein. The polycarbonate-polysiloxane is useful for forming thin extruded films, which in turn are useful for fabricating electrostatic film capacitors.

A gate-all around fin double diffused metal oxide semiconductor (DMOS) devices and methods of manufacture are disclosed. The method includes forming a plurality of fin structures from a substrate. The method further includes forming a well of a first conductivity type and a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures. The method further includes forming a source contact on an exposed portion of a first fin structure. The method further comprises forming drain contacts on exposed portions of adjacent fin structures to the first fin structure. The method further includes forming a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type.

A multicomponent dielectric film includes discrete overlapping dielectric layers of at least a first polymer material, a second polymer material, and a third polymer material. Adjoining dielectric layers define a generally planar interface therebetween which lies generally in an x-y plane of an x-y-z coordinate system. The interfaces between the layers delocalizing the charge build up in the layers. At least one dielectric layer including a stack of discrete polymer layers with polymer layer interfaces extending transverse to the x-y plane and optionally at least one filler having a higher dielectric constant than the first polymer material, the second polymer material, and/or the third polymer material.

The present invention provides a film having excellent heat resistance and a small difference between the permittivity at low temperatures and the permittivity at high temperatures. The present invention provides a film having a relative permittivity of 8 or more at a frequency of 1 kHz at 30 C., wherein the rate of change is 8 to +8% as calculated from a relative permittivity A at a frequency of 1 kHz at 30 C. and a relative permittivity B at a frequency of 1 kHz at 150 C. according to the following formula:
Rate of change(%)=(BA)/A100.

A blade includes an edge to be pressed against an end portion of a carrier film to fold the end portion upwards from a sheet. A clamp mechanism peels the carrier film off from the sheet by moving while clamping the upwardly folded end portion of the carrier film.

An electronic component includes an element main body and at least a pair of outer electrodes on the element main body. The outer electrodes each include an underlying electrode layer positioned so as to be in contact with the element main body and a plating layer positioned so as to be in contact with the underlying electrode layer. The plating layer includes a NiSn alloy plating layer positioned so as to be in contact with the underlying electrode layer.