A nanowire device of the present description may be produced with the incorporation of at least one hardmask during the fabrication of at least one nanowire transistor in order to assist in protecting an uppermost channel nanowire from damage that may result from fabrication processes, such as those used in a replacement metal gate process and/or the nanowire release process. The use of at least one hardmask may result in a substantially damage free uppermost channel nanowire in a multi-stacked nanowire transistor, which may improve the uniformity of the channel nanowires and the reliability of the overall multi-stacked nanowire transistor.

A printing blanket is provided which includes a reinforcing layer formed from a polymeric fabric reinforcing material which softens and flows at a temperature less than that used in the final curing step of forming the blanket or a polymeric reinforcing material having a thickness of between about 0.003 inches and 0.010 inches. The reinforcing layer provides a smooth surface to support an outer print surface layer and provides improved print performance while enabling a reduction in the overall thickness of the reinforcing layer.

A printing blanket is provided which includes a reinforcing layer formed from a polymeric fabric reinforcing material which softens and flows at a temperature less than that used in the final curing step of forming the blanket or a polymeric reinforcing material having a thickness of between about 0.003 inches and 0.010 inches. The reinforcing layer provides a smooth surface to support an outer print surface layer and provides improved print performance while enabling a reduction in the overall thickness of the reinforcing layer.

A nanowire device of the present description may be produced with the incorporation of at least one hardmask during the fabrication of at least one nanowire transistor in order to assist in protecting an uppermost channel nanowire from damage that may result from fabrication processes, such as those used in a replacement metal gate process and/or the nanowire release process. The use of at least one hardmask may result in a substantially damage free uppermost channel nanowire in a multi-stacked nanowire transistor, which may improve the uniformity of the channel nanowires and the reliability of the overall multi-stacked nanowire transistor.

A nanowire device of the present description may be produced with the incorporation of at least one hardmask during the fabrication of at least one nanowire transistor in order to assist in protecting an uppermost channel nanowire from damage that may result from fabrication processes, such as those used in a replacement metal gate process and/or the nanowire release process. The use of at least one hardmask may result in a substantially damage free uppermost channel nanowire in a multi-stacked nanowire transistor, which may improve the uniformity of the channel nanowires and the reliability of the overall multi-stacked nanowire transistor.