Patent classifications
B41N2210/14
Nanowire transistor fabrication with hardmask layers
A nanowire device of the present description may be produced with the incorporation of at least one hardmask during the fabrication of at least one nanowire transistor in order to assist in protecting an uppermost channel nanowire from damage that may result from fabrication processes, such as those used in a replacement metal gate process and/or the nanowire release process. The use of at least one hardmask may result in a substantially damage free uppermost channel nanowire in a multi-stacked nanowire transistor, which may improve the uniformity of the channel nanowires and the reliability of the overall multi-stacked nanowire transistor.
RUBBER BLANKET FOR A PRINTING CYLINDER OF A PRINTING MACHINE
A rubber blanket for a printing cylinder of a printing machine, comprising at least an upper printing layer made of compact elastomeric material, at least a lower layer having a contact surface in contact with the printing cylinder, and at least one fabric reinforcement layer interposed between the upper layer and the lower layer, the lower layer being made of expanded elastomeric material.
NANOWIRE TRANSISTOR FABRICATION WITH HARDMASK LAYERS
A nanowire device of the present description may be produced with the incorporation of at least one hardmask during the fabrication of at least one nanowire transistor in order to assist in protecting an uppermost channel nanowire from damage that may result from fabrication processes, such as those used in a replacement metal gate process and/or the nanowire release process. The use of at least one hardmask may result in a substantially damage free uppermost channel nanowire in a multi-stacked nanowire transistor, which may improve the uniformity of the channel nanowires and the reliability of the overall multi-stacked nanowire transistor.
Nanowire transistor fabrication with hardmask layers
A nanowire device of the present description may be produced with the incorporation of at least one hardmask during the fabrication of at least one nanowire transistor in order to assist in protecting an uppermost channel nanowire from damage that may result from fabrication processes, such as those used in a replacement metal gate process and/or the nanowire release process. The use of at least one hardmask may result in a substantially damage free uppermost channel nanowire in a multi-stacked nanowire transistor, which may improve the uniformity of the channel nanowires and the reliability of the overall multi-stacked nanowire transistor.
Imaging blanket and variable data lithography system employing the imaging blanket
An imaging blanket comprises a base comprising an elastic polymer and sulfur. A barrier layer is on the base and a surface layer is on the barrier layer. The surface layer comprises an elastomer and a platinum catalyst.
PRINTING BLANKET
Provided is a printing blanket that is unlikely to cause portions uncoated with ink even when the printing-applied surface has protrusions. The printing blanket according to an embodiment of the present invention includes a printing surface to be pressed against a printing plate on which the ink is placed and against the surface on which printing is applied and that is a target of printing. The printing blanket further includes a substrate, an inner coating layer covering at least part of the surface of the substrate, and an outer coating layer covering at least part of the surface of the inner coating layer that is on the side opposite the substrate. The inner coating layer has a smaller Asker C hardness than the substrate, and the outer coating layer has the printing surface on the side opposite the inner coating layer.
NANOWIRE TRANSISTOR FABRICATION WITH HARDMASK LAYERS
A nanowire device of the present description may be produced with the incorporation of at least one hardmask during the fabrication of at least one nanowire transistor in order to assist in protecting an uppermost channel nanowire from damage that may result from fabrication processes, such as those used in a replacement metal gate process and/or the nanowire release process. The use of at least one hardmask may result in a substantially damage free uppermost channel nanowire in a multi-stacked nanowire transistor, which may improve the uniformity of the channel nanowires and the reliability of the overall multi-stacked nanowire transistor.
Waterproof fabric with no-slippage features, in particular for offset printing blanket and method for manufacturing the same
A waterproof fabric (20) made such by the application of a protective film (10), coupled or coated on a side of the fabric (20). When the film (10) is already produced by extrusion in advance, it is attached onto the fabric and may comprise an adhesive layer (12) to the extruded film, or the adhesive layer may be coated on the fabric (20). The water/oil repellent and waterproof fabric (20) may also be obtained by coating at least one layer of materials made up of fluorocarbon, polyurethane, acrylic resins, with or without the addition of hollow microspheres of thermoplastic material.
Undercoat layer with low release force for aqueous printing transfix system
Disclosed herein are sacrificial coating compositions comprising at least one hydrophilic polymer; at least one hygroscopic agent; at least one surfactant; at least one non-reactive silicone release agent; and water. In certain embodiments, the at least one non-reactive silicone release agent is chosen from polyether modified polysiloxane and nonreactive silicone glycol copolymers. In certain embodiments, the at least one non-reactive silicone release agent may be present in an amount ranging from about 0.001% to about 2%, based on the total weight of the composition, such as from about 0.03% to about 0.06%. Also disclosed herein is a blanket material suitable for transfix printing comprising a sacrificial coating composition, as well as an indirect printing process comprising a step of applying a sacrificial coating composition to a blanket material.
FLUOROSILICONE COMPOSITE AND FORMULATION PROCESS FOR IMAGING PLATE
An apparatus and method of manufacturing a fluorosilicone composite for a variable data lithography imaging member surface layer. Examples of the fluorosilicone composite include a first part and a second part, the first part having fluorosilicone, carbon black, silica and butyl acetate, the second part having a platinum catalyst, a crosslinker, butyl acetate and an inhibitor. The first part may also include a dispersant (e.g., a polyoxyalkylene amine derivative) that removes a need for shaking the dispersion by paint shaker and instead allows a more manufacture friendly roll ball milling process. The dispersant will also help in stabilizing the fluorosilicone composite for scaled up production.