A manufacturing method of a mask plate for shielding during sealant-curing includes: forming a negative photoresist light-shielding material layer on a transparent substrate; with a color-filter mask plate set, exposing the substrate formed with the negative photoresist light-shielding material layer; developing the substrate after exposing to form the pattern of the mask plate. The method does not require separate fabrication of a mask plate, thereby significantly reducing the manufacturing costs of the mask plate for shielding during sealant-curing.

A plasma etching method can form a hole having a required opening diameter in a silicon nitride layer, while suppressing a tip end portion of the hole from being narrowed. The plasma etching method includes a first process of supplying a processing gas containing oxygen and fluorocarbon into a plasma processing apparatus; and a second process of etching a silicon nitride layer 106a of a processing target object with a first mask 106 by exciting the processing gas into plasma. Further, the second process is performed in a state where an organic film ad generated from the processing gas is formed on an inner wall of an opening of the first mask 106 by gradually reducing a temperature of the processing target object from a first temperature T1 (80° C.) to a second temperature T2 (40° C.).

A method of concurrently etching a first region in which silicon oxide films and silicon nitride films are alternately stacked and a second region including the silicon oxide film having a thickness larger than a thickness of the silicon oxide film of the first region is provided. The method includes generating plasma of a first processing gas containing a fluorocarbon gas and a hydrofluorocarbon gas within a processing vessel of a plasma processing apparatus into which a processing target object is carried; and generating plasma of a second processing gas containing a hydrogen gas, a hydrofluorocarbon gas and a nitrogen gas within the processing vessel of the plasma processing apparatus. Further, the generating of the plasma of the first processing gas and the generating of the plasma of the second processing gas are repeated alternately.

A method for marking artificial turf mats that allows for the obtaining of artificial turf mats with indelible motifs on any of the surfaces of said mats, comprising positioning means for at least one mat and marking means applicable onto at least one surface of said mat, so that said marking means are capable of producing at least one motif onto the surface of said mat.

A method and an apparatus for etching microstructures and the like that provides improved selectivity to surrounding materials when etching silicon using xenon difluoride (XeF2). Etch selectivity is greatly enhanced with the addition of hydrogen to the process chamber.

A manufacturing method for a magnetic head forms a leading shield having a top surface. The top surface of the leading shield includes first and second portions. The second portion is located farther from a medium facing surface than is the first portion, and recessed from the first portion. A first gap layer is then formed on the first portion. Then, a magnetic layer including an initial first side shield, an initial second side shield and a coupling section connecting them is formed using a mold. The mold is then removed. The coupling section is then removed by etching the magnetic layer. A second gap layer and a main pole are then formed in this order.

Provided is a method for increasing pattern density of a structure using an integration scheme and perform pitch splitting at the resist level without the use of hard mandrels, the method comprising: providing a substrate having a patterned resist layer and an underlying layer comprising a silicon anti-reflective coating layer, an amorphous layer, and a target layer; performing a resist hardening process; performing a first conformal spacer deposition using an atomic layer deposition technique with an oxide, performing a spacer first reactive ion etch process and a first pull process on the first conformal layer, performing a second conformal spacer deposition using titanium oxide; performing a second spacer RIE process and a second pull process, generating a second spacer pattern; and transferring the second spacer pattern into the target layer, wherein targets include patterning uniformity, pulldown of structures, slimming of structures, aspect ratio of structures, and line width roughness.

A method for fabricating a near-field transducer (NFT) for a heat assisted magnetic recording (HAMR) write apparatus is described. The HAMR write apparatus is coupled with a laser for providing energy and has a media-facing surface (MFS) configured to reside in proximity to a media during use. The method includes providing a stack on an underlayer. The stack includes an endpoint detection layer, an optical layer and an etchable layer. The optical layer is between the etchable and endpoint detection layers. The etchable layer is patterned to form a mask. A portion of the optical layer is removed. A remaining portion of the optical layer has a bevel at a bevel angle from the MFS location. The bevel angle is nonzero and acute. The NFT is provided such that the NFT has an NFT front surface adjoining the bevel and at the bevel angle from the MFS location.

Techniques herein include methods for controllable lateral etching of dielectrics in polymerizing fluorocarbon plasmas. Methods can include dielectric stack etching that uses a mask trimming step as part of a silicon etching process. Using a fluorocarbon mixture for dielectric mask trimming provides several advantages, such as being straightforward to apply and providing additional flexibility to the process flow. Thus, techniques herein provide a method to correct or tune CDs on a hardmask. In general, this technique can include using a fluorine-based and a fluorocarbon-based, or fluorohydrocarbon-based, chemistry for creating a plasma, and controlling a ratio of the two chemistries. Without the hardmask trim method disclosed herein, if a hardmask CD is not on target, then a wafer is scrapped. With hard-mask trim capability in silicon etch as disclosed herein, a given CD can be re-targeted to eliminate wafer-scraps.

Disclosed is a method for etching a first region including a multi-layer film formed by providing silicon oxide films and silicon nitride films alternately, and a second region having a single silicon oxide film. The etching method includes: providing a processing target object including a mask provided on the first region and the second region within a processing container of a plasma processing apparatus; generating plasma of a first processing gas including a hydrofluorocarbon gas within the processing container that accommodates the processing target object; and generating plasma of a second processing gas including a fluorocarbon gas within the processing container that accommodates the processing target object. The step of generating the plasma of the first processing gas and the step of generating the plasma of the second processing gas are alternately repeated.