A semiconductor device of an embodiment includes: a first trench located in a silicon carbide layer extending in a first direction; a second trench and a third trench adjacent to each other in the first direction; n type first silicon carbide region; p type second silicon carbide region on the first silicon carbide region; n type third silicon carbide region on the second silicon carbide region; p type fourth silicon carbide region between the first silicon carbide region and the second trench; p type fifth silicon carbide region between the first silicon carbide region and the third trench; p type sixth silicon carbide region shallower than the second trench between the second trench and the third trench and having a p type impurity concentration higher than that of the second silicon carbide region; a gate electrode in the first trench; a first electrode, and a second electrode.

The present disclosure is directed to an electric generator and motor transmission system that is capable of operating with high energy, wide operating range and extremely variable torque and RPM conditions. In accordance with various embodiments, the disclosed system is operable to: dynamically change the output “size” of the motor/generator by modularly engaging and disengaging rotor/stator sets as power demands increase or decrease; activate one stator or another within the rotor/stator sets as torque/RPM or amperage/voltage requirements change; and/or change from parallel to series winding configurations or the reverse through sets of 2, 4, 6 or more parallel, three-phase, non-twisted coil windings with switchable separated center tap to efficiently meet torque/RPM or amperage/voltage requirements.

A rotor tube for an electric machine of a vehicle includes an outer tube and first and second coupling sections coupled to the outer tube at opposite end regions of the outer tube relative to a longitudinal axis of the rotor tube. First and second hubs are coupled to the outer tube at the opposite end regions of the outer tube relative to the longitudinal axis of the rotor tube. A ventilation element is coupled to the outer tube. An inner tube is disposed within the outer tube relative to the longitudinal axis of the rotor tube such that the outer tube surrounds the inner tube. At least two components selected from the first coupling section, second coupling section, first hub, second hub, outer tube, ventilation element and inner tube are formed in one piece as a cast component.

A rotor tube for an electric machine of a vehicle includes an outer tube and first and second coupling sections coupled to the outer tube at opposite end regions of the outer tube relative to a longitudinal axis of the rotor tube. First and second hubs are coupled to the outer tube at the opposite end regions of the outer tube relative to the longitudinal axis of the rotor tube. A ventilation element is coupled to the outer tube. An inner tube is disposed within the outer tube relative to the longitudinal axis of the rotor tube such that the outer tube surrounds the inner tube. At least two components selected from the first coupling section, second coupling section, first hub, second hub, outer tube, ventilation element and inner tube are formed in one piece as a cast component.

A semiconductor device of an embodiment includes a first trench extending in a first direction in a silicon carbide layer; a second trench and a third trench adjacent to each other in the first direction; a first silicon carbide region of n type; a second silicon carbide region of p type on the first silicon carbide region; a third silicon carbide region of n type on the second silicon carbide region; a fourth silicon carbide region of p type between the first silicon carbide region and the second trench; a fifth silicon carbide region of p type between the first silicon carbide region and the third trench; a gate electrode in the first trench; a first electrode, part of which is in the second trench, the first electrode contacting the first silicon carbide region between the fourth silicon carbide region and the fifth silicon carbide region; and a second electrode.

A semiconductor device of an embodiment includes: a first trench located in a silicon carbide layer extending in a first direction; a second trench and a third trench adjacent to each other in the first direction; n type first silicon carbide region; p type second silicon carbide region on the first silicon carbide region; n type third silicon carbide region on the second silicon carbide region; p type fourth silicon carbide region between the first silicon carbide region and the second trench; p type fifth silicon carbide region between the first silicon carbide region and the third trench; p type sixth silicon carbide region shallower than the second trench between the second trench and the third trench and having a p type impurity concentration higher than that of the second silicon carbide region; a gate electrode in the first trench; a first electrode, and a second electrode.

A semiconductor device of an embodiment includes: a first trench in a silicon carbide layer and extending in a first direction; a second trench and a third trench located in a second direction orthogonal to the first direction with respect to the first trench and adjacent to each other in the first direction, n type first silicon carbide region, p type second silicon carbide region on the first silicon carbide region, n type third silicon carbide region on the second silicon carbide region, p type fourth silicon carbide region between the first silicon carbide region and the second trench, and p type fifth silicon carbide region located between the first silicon carbide region and the third trench; a gate electrode in the first trench; a first electrode; and a second electrode. A part of the first silicon carbide region is located between the second trench and the third trench.

A drive module for a self-driving vehicle of an elevated-track-type support structure. The drive module is able to be connected to a support arm for a gondola.

A drive module for a self-driving vehicle of an elevated-track-type support structure. The drive module is able to be connected to a support arm for a gondola.

A closed socket brazed joint assembly is provided. The assembly comprises: a first member composed of a first base material; a second member composed of a second base material with a first end composed of a first profile with at least first and second faying surfaces; a socket formed in said first member configured to receive the first end of the second member with a faying surface with at least two portions separated by a first fillet; wherein the socket further is configured such that in a first state before the application of energy to the joint there is a gap with a width between the faying surfaces of the first member and the faying surfaces of the second member; and, in the first state a slug of brazing fill material is disposed between the first end of the second member and at least one faying surface of the socket; and, wherein a second state is created when upon application of energy the brazing fill material melts and flows from between first end of the second member and the at least one faying surface of the socket filling aforesaid gap between the faying surfaces of the first and second members.