Aspects include a method of manufacturing a flexible electronic structure that includes a metal or doped silicon substrate. Aspects include depositing an adhesive layer on the top side of the structure. Aspects also include depositing a release layer and a glass layer on the top side of the structure. Aspects also include reducing a thickness of the silicon substrate on the bottom side of the structure.

A method of obtaining multilayer graphene includes the steps of depositing a first graphene monolayer having a protective layer on top thereof, on a sample having a second graphene monolayer grown on a metal foil. The method further includes the steps of attaching to the metal foil at least one second frame, the at least one first frame having a substrate and a thermal release adhesive polymer layer; and removing or detaching the metal foil. Suspended multilayer graphene or the deposited multilayer graphene is obtained by the previous method. A device having suspended multilayer graphene or deposited multilayer graphene is preferably a NEMs or MEMs sensor or a transparent electrode for example for a display or for an organic or inorganic light-emitting diode (OLED/LED).

According to a method in semiconductor device fabrication, a first trench and a second trench are concurrently etched in a semi-finished semiconductor device. The first trench is a mechanical decoupling trench between a first region of an eventual semiconductor device and a second region thereof. The method further includes concurrently passivating or insulating sidewalls of the first trench and of the second trench. A related semiconductor device includes a first trench configured to provide a mechanical decoupling between a first region and a second region of the semiconductor device. The semiconductor device further includes a second trench and a sidewall coating at sidewalls of the first trench and the second trench. The sidewall coating at the sidewalls of the first trench and at the sidewalls of the second trench are of the same material.

A flexible display device includes a flexible display panel, a first outer member disposed on a surface of the flexible display panel, and a first adhesive member attaching the first outer member to the flexible display panel. The first adhesive member includes an ultraviolet curable resin. A conversion rate of the ultraviolet curable resin in a region of the first adhesive member corresponding to a folding region of the flexible display panel is lower than a conversion rate of other regions adjacent thereto.

A monolithic structure designed to be built with relatively few manufacturing steps comprises three dimensional elements enclosed by planar faces, a rotation within a shearable medium, a strain arising from the rotation, and potential energy configurations that are dependent upon the strain. A first tensor for strain or displacement within a shearable medium is derived from the rotation. A configuration of a potential energy, its gradient or a potential energy per unit volume in the structure is derived from a second tensor whose coefficients can be derived from a sum of constants and trigonometric functions. A new energy configuration is defined when parameters and coefficients of the second tensor become dependent upon the rotation and its subsequent strain. Drawings illustrate several views and examples of the interaction between the rotation, tensors and three dimensional elements.

In various embodiments, a method of processing a monocrystalline substrate is provided. The method may include severing the substrate along a main processing side into at least two monocrystalline substrate segments, and forming a micromechanical structure comprising at least one monocrystalline substrate segment of the at least two substrate segments.

Aspects include a method of manufacturing a flexible electronic structure that includes a metal or doped silicon substrate. Aspects include depositing an insulating layer on a silicon substrate. Aspects also include patterning a metal on a silicon substrate. Aspects also include selectively masking the structure to expose the metal and a portion of the silicon substrate. Aspects also include depositing a conductive layer including a conductive metal on the structure. Aspects also include plating the conductive material on the structure. Aspects also include spalling the structure.

A substantially planar self-folding film assembly to generate a folded three-dimensional assembly. The assembly includes a flexible support substrate, adhesive elements, and folding members. The folding members include a base, a folding region, and a hinge adjacent each folding region attached at the base to the flexible support substrate by at least one of the adhesive elements. An array of polymer actuators is co-extensive, or shaped to be not co-extensive, with each of the flexible folding members. Upon activation by a patterned light to heat conversion layer, each polymer actuator is designed and configured to provide a displacement of the corresponding flexible folding member about each hinge.

According to a method in semiconductor device fabrication, a first trench and a second trench are concurrently etched in a semi-finished semiconductor device. The first trench is a mechanical decoupling trench between a first region of an eventual semiconductor device and a second region thereof. The method further includes concurrently passivating or insulating sidewalls of the first trench and of the second trench. A related semiconductor device includes a first trench configured to provide a mechanical decoupling between a first region and a second region of the semiconductor device. The semiconductor device further includes a second trench and a sidewall coating at sidewalls of the first trench and the second trench. The sidewall coating at the sidewalls of the first trench and at the sidewalls of the second trench are of the same material.

Aspects include a method of manufacturing a flexible electronic structure that includes a metal or doped silicon substrate. Aspects include depositing an insulating layer on a silicon substrate. Aspects also include patterning a metal on a silicon substrate. Aspects also include selectively masking the structure to expose the metal and a portion of the silicon substrate. Aspects also include depositing a conductive layer including a conductive metal on the structure. Aspects also include plating the conductive material on the structure. Aspects also include spalling the structure.