The present disclosure provides a semiconductor device, which includes a first substrate comprising an upper surface and a second substrate disposed over the first substrate. The semiconductor device also includes a first electrode disposed in the second substrate and configured to move in a direction substantially parallel to the upper surface in response to a pressure difference, and a second electrode disposed in the second substrate. The second electrode is configured to provide a capacitance in conjunction with the first electrode.

A static expansion method is performed by expanding a volume of a testing gas from V.sub.0 to V.sub.0+V.sub.1 between a second chamber of the volume V.sub.1 which is connected to an upstream side of a measurement chamber and a first chamber of the volume V.sub.0 which is connected to an upstream side of the second chamber, wherein the first camber is in communication with the second chamber via a first valve, wherein the second chamber is in communication with the measurement chamber via each of a second valve and an orifice or porous plug, respectively. When the first valve is opened and the second valve is closed, the testing gas flows from the first chamber via the second chamber into the measurement chamber only through the orifice or porous plug.

A microelectromechanical (MEMS) resonator includes a resonator structure having a plurality of beam elements and connection elements with certain geometry, where the plurality of beam elements are positioned adjacent to each other and adjacent beam elements are mechanically connected to each other by the connection elements, where the geometry of the beam elements or the connection elements varies within the resonator structure.

A waterproof structure includes a housing, an electroacoustic transducer, a packing and an annular member. The electroacoustic transducer has a case formed with tone holes. The packing is interposed between the housing and the electroacoustic transducer and has a thin film part on a part opposed to the tone holes. The annular member is interposed between the thin film part and the case and surrounds the tone holes. A space surrounded by the thin film part, the annular member and the case is formed. The annular member is configured to bias the thin film part of the packing.

A device includes a first substrate. The device also includes a barrier structure including a metallic layer on the first substrate, where the barrier structure forms a cavity. The device also includes a second substrate on the metallic layer, where the metallic layer extends between the first substrate and the second substrate, and where the metallic layer includes a sloped edge that contacts the first substrate within the cavity.

A MEMS device includes a first multi-layer structure, a second multi-layer structure over the first multi-layer structure, a first semiconductor layer between the first and second multilayer structures, a first air gap separating the first multi-layer structure and the first semiconductor layer, a second air gap separating the first semiconductor layer and the second multi-layer structure, a plurality of semiconductor pillars, and a plurality of second semiconductor pillars. The first semiconductor pillars are exposed to the first air gap, and coupled to the first semiconductor layer and the first multi-layer structure. The second semiconductor pillars are exposed to the second air gap, and coupled to the first semiconductor layer and the second multi-layer structure.

A micromechanical arm is provided. The micromechanical arm includes: a bottom metal piece having a plurality of trenches extending downwardly from a top surface of the bottom metal piece; an intermediate layer on the bottom metal piece and filling at least a portion of each of the plurality of trenches; and a top metal piece on the intermediate layer. The intermediate layer is made of a material that has a stiffness smaller than the bottom metal piece and the top metal piece.

A MEMS gas sensor (A) and array (B) thereof, a gas detection and preparation method. The gas sensor (A) comprises a first substrate (A2) with a cavity (A1) provided in a first surface, and a gas detection assembly (A3) arranged at an opening of the cavity The gas detection assembly comprises: a supporting suspension bridge (A31) erected on the opening of the cavity, and a gas detection part (A32) arranged on the supporting suspension bridge. The gas detection part comprises a strip-shaped heating electrode part (A321), an insulating layer (A322), a strip-shaped detection electrode part (A323) and a gas-sensitive material part (A324), which are sequentially stacked. The strip-shaped detection electrode part comprises a first detection electrode part (A323-1) and a second detection electrode part (A323-2), with a first opening (A325) provided between the A323-1 and A323-2; the gas-sensitive material part is arranged at the position of the first opening.

A method of fabricating a micro-electromechanical systems (MEMS) structure comprises: providing a substrate; forming an etch stop layer over the substrate; forming a sacrificial layer on the etch stop layer; selectively etching the sacrificial layer to create a remaining sacrificial layer; forming a dielectric support layer; selectively etching the dielectric support layer to create an opening in the dielectric support layer; forming a bottom metal layer in the opening and on the remaining sacrificial layer; selectively etching the bottom metal layer to form a plurality of trenches extending downwardly from a top surface of the bottom metal layer; depositing an intermediate layer on the bottom metal layer such that the intermediate layer fills at least a portion of each of the plurality of trenches; forming a top metal piece on the intermediate layer; and removing the remaining sacrificial layer to create a cavity.