The semiconductor device includes a microelectromechanical system (MEMS) chip having a first main surface and a second main surface situated opposite the first main surface, a first glass-based substrate, on which the MEMS chip is arranged by its first main surface, and a second substrate, which is arranged on the second main surface of the MEMS chip, wherein the MEMS chip has a first recess connected to the surroundings by way of a plurality of perforation holes arranged in the first substrate.

An example includes: a system board having a surface; bond fingers on a surface of the system board; a semiconductor device on the surface of the system board, the semiconductor device comprising a semiconductor die having a surface, the semiconductor die comprising bond pads on the surface; conductors coupling the bond pads to the bond fingers; and a datum structure on the surface of the system board, the datum structure having openings that form wells with sides around the bond fingers.

Representative implementations of techniques and devices provide seals for sealing the joints of bonded microelectronic devices as well as bonded and sealed microelectronic assemblies. Seals are disposed at joined surfaces of stacked dies and wafers to seal the joined surfaces. The seals may be disposed at an exterior periphery of the bonded microelectronic devices or disposed within the periphery using the various techniques.

A method for producing a semiconductor device includes providing a microelectromechanical system (MEMS) chip having a first main surface and a second main surface situated opposite the first main surface, wherein the first main surface of the MEMS chip has a recess; providing a first glass-based substrate, wherein the first glass-based substrate has a plurality of perforation holes; applying the first main surface of the MEMS chip onto the first glass-based substrate in such a way that the recess becomes located over the plurality of perforation holes; providing a second substrate, which is arranged on the second main surface of the MEMS chip; and applying the second substrate to the second main surface of the MEMS chip.

A method of fabricating a semiconductor substrate includes the following steps. A first wafer is provided and a first surface of the first wafer is etched to form a plurality of cavities. A second wafer is formed on the first surface, where forming the second wafer includes the following steps: providing a core substrate; forming a first insulating layer on the core substrate; and depositing a polysilicon layer on the first insulating layer and the core substrate. In addition, the polysilicon layer is bonded with the first wafer to cover the cavities, where the polysilicon layer is disposed between the first insulating layer and the first wafer. In addition, a semiconductor substrate and MEMS devices using the semiconductor substrate are also provided.

A method of fabricating a semiconductor substrate includes the following steps. A first wafer is provided and a first surface of the first wafer is etched to form a plurality of cavities. A second wafer is formed on the first surface, where forming the second wafer includes the following steps: providing a core substrate; forming a first insulating layer on the core substrate; and depositing a polysilicon layer on the first insulating layer and the core substrate. The polysilicon layer is bonded with the first wafer to cover the cavities, where the polysilicon layer is disposed between the first insulating layer and the first wafer.