Patent classifications
B81B7/0032
SEMICONDUCTOR PACKAGES AND MANUFACTURING METHOD OF THE SAME
A semiconductor package includes a first substrate and a first semiconductor device. The first semiconductor device is bonded to the first substrate and includes a second substrate, a plurality of first dies and a second die. The first dies are disposed between the first substrate and the second substrate. The second die is surrounded by the first dies. A cavity is formed among the first dies, the first substrate and the second substrate, and a gap is formed between the second die and the first substrate.
Eutectic bonding with AlGe
A MEMS device formed in a first semiconductor substrate is sealed using a second semiconductor substrate. To achieve this, an Aluminum Germanium structure is formed above the first substrate, and a polysilicon layer is formed above the second substrate. The first substrate is covered with the second substrate so as to cause the polysilicon layer to contact the Aluminum Germanium structure. Thereafter, eutectic bonding is performed between the first and second substrates so as to cause the Aluminum Germanium structure to melt and form an AlGeSi sealant thereby to seal the MEMS device. Optionally, the Germanium Aluminum structure includes, in part, a layer of Germanium overlaying a layer of Aluminum.
Sensing device and method for packaging the same
A sensing device and a method for packaging the same are provided. The sensing device includes a lead frame, a chip, an insulated housing, a sensor, and a protector. The lead frame includes a first surface, a second surface opposite to the first surface, a first die-bonding area and a plurality of wire bonding areas of the lead frame disposed on the first surface, and a second die-bonding area disposed on the second surface. The chip is disposed in the first die-bonding area and is electrically connected to the plurality of wire bonding areas of the lead frame. The insulated housing covers the chip and a portion of the lead frame. The sensor is disposed on the second die-bonding area of the lead frame, and the protector is disposed on the sensor.
SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS
A semiconductor device includes a detector mounted on a base substrate and including a pressure detector to detect pressure, a base portion on the base substrate where the detector is buried, a protruding portion protruding upward from the base portion and including an exposure hole which causes the pressure detector to be exposed upward, and a lid supported by an upper surface of the protruding portion to close the exposure hole. An outer circumferential portion of the lid extends outward from the protruding portion in plan view. The lid includes a slit that is open to an outer side surface and causes the exposure hole to communicate with outside sideward of the semiconductor device.
Integrated MEMS cavity seal
A microelectromechanical (MEMS) system may comprise multiple sensors within cavities of the MEMS system. The operation of different sensors requires different pressures within the respective cavities. A first cavity may be sealed at a first pressure. A through-hole may be etched into a cap layer of the MEMS system to introduce gas into a second cavity such that the cavity has a desired pressure. The cavity may then be sealed by a MEMS valve to maintain the desired pressure in the second cavity.
Packaging for a MEMS transducer
The application describes a package substrate for a MEMS transducer package having a recessed region formed in an upper surface of the package substrate. The recessed region extends only partially through the package substrate from an opening in the upper surface of the package substrate in a first direction towards the lower surface of the substrate. The recessed region extends only partially through the package substrate from an opening in a side surface of the package substrate in a second direction towards an opposite side surface.
Micromechanical device including a covering bond frame
A micromechanical device that includes a substrate, a functional layer, and a cap that are situated one above the other in parallel to a main plane of extension. A cavity that is surrounded by a bond frame that extends in parallel to the main plane of extension is formed in the functional layer, the cap being connected to the bond frame. The cavity is situated partially between the bond frame and the substrate in a direction perpendicular to the main plane of extension. A method for manufacturing a micromechanical device is also provided.
Semiconductor package structure and method for manufacturing the same
A semiconductor package structure includes a substrate; a first die on the substrate, wherein an active surface of the first die is facing away from the substrate; a second die on the active surface of the first die, electrically connected to the first die through a plurality of conductive terminals; and a sealing structure on the active surface of the first die, surrounding the plurality of conductive terminals and abutting the second die thereby forming a cavity between the first die and the second die. A method for manufacturing the semiconductor package structure is also provided.
Semiconductor package and method for manufacturing the same
A semiconductor package may include a substrate; a microelectromechanical device disposed on the substrate; an interconnection structure connecting the substrate to the microelectromechanical device; and a metallic sealing structure surrounding the interconnection structure.
PIEZOELECTRIC MEMS MICROPHONE
A microphone including a casing having a front wall, a back wall, and a side wall joining the front wall to the back wall, a transducer mounted to the front wall, the transducer including a substrate and a transducing element, the transducing element having a transducer acoustic compliance dependent on the transducing element dimensions, a back cavity cooperatively defined between the back wall, the side wall, and the transducer, the back cavity having a back cavity acoustic compliance. The transducing element is dimensioned such that the transducing element length matches a predetermined resonant frequency and the transducing element width, thickness, and elasticity produces a transducer acoustic compliance within a given range of the back cavity acoustic compliance.