Patent classifications
B81B7/0032
Semiconductor package and method for manufacturing the same
A semiconductor package may include a substrate; a microelectromechanical device disposed on the substrate; an interconnection structure connecting the substrate to the microelectromechanical device; and a metallic sealing structure surrounding the interconnection structure.
MEMS microphone, method of manufacturing the same and MEMS microphone package including the same
A MEMS microphone includes a cavity extending portion that increases the size of the cavity. The cavity extending portion can be sloped or stepped in order to create a desired profile of the extended cavity shape. Thus, the volume of the cavity may be increased in order to decrease the compliance and to increase a Signal to Noise Ratio.
Electrical connection to a micro electro-mechanical system
A MEMS device includes, in part, first and second conductive semiconductor substrates, an insulating material disposed between the semiconductor substrates, a cavity formed in the second semiconductor substrate, and at least first and second drive masses each of which includes a multitude of beams etched from the first semiconductor substrate and is adapted to move in the cavity in response to an applied force. At least a first portion of the first substrate is adapted to move in response to the applied force and causes the at least first and second drive mass to be in electrical communication with the first substrate. The device may further include, in part, a coupling spring disposed between and in electrical communication with the first and second drive masses. The coupling spring is adapted to provide electrical communication between a second portion of the first substrate and the first and second drive masses.
MEMS package and method of manufacturing the same
A MEMS package has a MEMS chip, and a package substrate which the MEMS chip is adhered. The MEMS chip has an element substrate which a movable element is formed. The MEMS package has a particle filter formed on the package substrate or the MEMS chip. The particle filter has a pierced-structure, which plural through holes are formed on a base surface by a regular arrangement. Further, in the particle filter, a plane-opening rate is set at least 45%, and a thickness-opening rate is set at least 50%.
Leadless pressure sensors
Disclosed are pressure sensors including a die and an application-specific integrated circuit (ASIC) mounted on a top surface of a substrate. The pressure sensor can define an inner volume and a bottom opening configured to abut the substrate. The die and ASIC are mounted on the top surface of the substrate within the inner volume. The substrate defines a first aperture therethrough and the die defines a second aperture therethrough in a direction along an axis perpendicular to the substrate, the first aperture and the second aperture being aligned. Metallic barrier(s) disposed on a bottom surface of the substrate, circumferentially about the first aperture, can be at least partially coated with solder mask to reduce or prevent flow of unwanted materials past the metallic barriers and through the first aperture. The substrate can include electrical connection pads on the bottom surface configured to be in communication with a daughter board.
MICROPHONE DEVICE AND METHOD FOR MANUFACTURING SAME
A MEMS microphone device greatly reduced in size includes a metallic substrate, a printed circuit including an audio sensor, and a processing chip. The metallic substrate includes a first bent portion and a second bent portion. The printed circuit is directly formed by thick film printing on the metal substrate which is then punched and shaped into the first and second bent portions. The audio sensor receives sounds and functions as a microphone. The processing chip is coupled to the printed circuit and processes the electrical signal. A method for manufacturing such microphone device is also disclosed.
Process for the exposure of a region on one face of an electronic device
A process for exposing at least one region of a face, known as the front face, of an electronic device, the process including the following steps: A bonding step for a cover (600) to the front face, the bonding being undertaken such that the cover (600) forms a closed cavity (650) with the region, advantageously hermetically sealed; Formation of an encapsulation coating (700), of thickness E1, covering the front face and the cover (600); A thinning step for the encapsulation coating (700), the thinning step including removal of a removal thickness E2, less than the thickness E1, of the encapsulation coating (700), the removal thickness E2 being adjusted such that an opening is formed in the cover (600).
Method for producing packaged MEMS assemblies at the wafer level, and packaged MEMS assembly
A production method includes providing a semiconductor substrate with a wiring layer stack having cutouts on a first main surface region of the semiconductor substrate at which MEMS components are arranged in an exposed manner in the cutouts and projecting through contact elements are arranged at metallization regions of the wiring layer stack; applying a b-stage material layer cured in an intermediate stage on the wiring layer stack, such that the cutouts are covered by the b-stage material layer and the vertically projecting through contact elements are introduced into the b-stage material layer; curing the b-stage material layer to obtain a cured b-stage material layer; thinning the cured b-stage material layer; and applying a redistribution layer (RDL) structure on the thinned, cured b-stage material layer to obtain an electrical connection between the wiring layer stack and the RDL structure via the through contact elements.
Eutectic bonding with AlGe
A MEMS device formed in a first semiconductor substrate is sealed using a second semiconductor substrate. To achieve this, an Aluminum Germanium structure is formed above the first substrate, and a polysilicon layer is formed above the second substrate. The first substrate is covered with the second substrate so as to cause the polysilicon layer to contact the Aluminum Germanium structure. Thereafter, eutectic bonding is performed between the first and second substrates so as to cause the Aluminum Germanium structure to melt and form an AlGeSi sealant thereby to seal the MEMS device. Optionally, the Germanium Aluminum structure includes, in part, a layer of Germanium overlaying a layer of Aluminum.
PACKAGING FOR A MEMS TRANSDUCER
The application describes a package substrate for a MEMS transducer package having a recessed region formed in an upper surface of the package substrate. The recessed region extends only partially through the package substrate from an opening in the upper surface of the package substrate in a first direction towards the lower surface of the substrate. The recessed region extends only partially though the package substrate from an opening in a side surface of the package substrate in a second direction towards an opposite side surface.