A projecting apparatus is provided, and includes a frame, a light source module, and a microelectromechanical systems (MEMS) module. The frame includes two lateral boards respectively arranged on two opposite sides thereof, and a transverse beam that connects the two lateral boards. Each of the two lateral boards has a guiding slot recessed in a portion thereof. The MEMS module is configured to transmit light emitted from the light source module, and includes a flexible circuit board, a first MEMS unit, and a second MEMS unit, the latter two of which are connected to the flexible circuit board. The first MEMS unit is inserted into the guiding slots of the two lateral boards. The second MEMS unit abuts against the two lateral boards and/or the transverse beam. The first MEMS unit and the second MEMS unit have a predetermined angle there-between by the second frame portion.

A method includes fusion bonding a handle wafer to a first side of a device wafer. The method further includes depositing a first mask on a second side of the device wafer, wherein the second side is planar. A plurality of dimple features is formed on an exposed portion on the second side of the device wafer. The first mask is removed from the second side of the device wafer. A second mask is deposited on the second side of the device wafer that corresponds to a standoff. An exposed portion on the second side of the device wafer is etched to form the standoff. The second mask is removed. A rough polysilicon layer is deposited on the second side of the device wafer. A eutectic bond layer is deposited on the standoff. In some embodiments, a micro-electro-mechanical system (MEMS) device pattern is etched into the device wafer.

A microelectromechanical systems (MEMS) device comprises a diaphragm assembly and a force feedback system. The diaphragm assembly includes a first diaphragm and a second diaphragm facing the first diaphragm, with a low pressure region being defined therebetween. The diaphragm assembly further includes a first plurality of electrodes, a second plurality of electrodes, and a third plurality of electrodes. A solid dielectric is spaced between the first and second diaphragms and includes a plurality of apertures. Each electrode of the first, second, and third pluralities of electrodes is disposed at least partially within an aperture of the plurality of apertures. The force feedback system receives output from the diaphragm assembly and produces a feedback voltage that is applied to the diaphragm assembly to produce an electrostatic force on the diaphragm assembly that counters a low-frequency pressure across the diaphragm assembly.

A MEMS device may output a signal during operation that may include an in-phase component and a quadrature component. An external signal having a phase that corresponds to the quadrature component may be applied to the MEMS device, such that the MEMS device outputs a signal having a modified in-phase component and a modified quadrature component. A phase error for the MEMS device may be determined based on the modified in-phase component and the modified quadrature component.

The present disclosure provides a semiconductor structure and a method for fabricating semiconductor structure. The semiconductor structure includes a first device, configured to be a complementary metal oxide semiconductor device, wherein the first device includes a substrate, a multi-layer structure disposed on the substrate, a first hole, defined between a first end with a first circumference and a second end with a second circumference, a second hole, aligned to the first hole and defined between the second end and a third end with a third circumference, wherein the third circumference is larger than the first circumference and the second circumference, and a second device, configured to be a micro-electro mechanical system device and bonded to the first device, wherein a first chamber is between the first device and the second device, and the first end links with the first chamber, and a sealing object configured to seal the second hole.

A multi-layer, super-planar laminate structure can be formed from distinctly patterned layers. The layers in the structure can include at least one rigid layer and at least one flexible layer; the rigid layer includes a plurality of rigid segments, and the flexible layer can extend between the rigid segments to serve as a joint. The layers are then stacked and bonded at selected locations to form a laminate structure with inter-layer bonds, and the laminate structure is flexed at the flexible layer between rigid segments to produce an expanded three-dimensional structure, wherein the layers are joined at the selected bonding locations and separated at other locations. A layer with electrical wiring can be included in the structure for delivering electric current to devices on or in the laminate structure.

A bottom semiconductor region is formed to include a main sub-region, extending through a bottom dielectric region that coats a semiconductor wafer, and a secondary sub-region which coats the bottom dielectric region and surrounds the main sub-region. First and second top cavities are formed through the wafer, delimiting a fixed body and a patterned structure that includes a central portion which contacts the main sub-region, and deformable portions in contact with the bottom dielectric region. A bottom cavity is formed through the bottom semiconductor region, as far as the bottom dielectric region, the bottom cavity laterally delimiting a stiffening region including the main sub-region and leaving exposed parts of the bottom dielectric region that contact the deformable portions and parts of the bottom dielectric region that delimit the first and second top cavities. The parts left exposed by the bottom cavity are selectively removed.

A semiconductor structure includes: a first device; a second device contacted with the first device, wherein a chamber is formed between the first device and the second device; a first hole disposed in the second device and defined between a first end with a first circumference and a second end with a second circumference; a second hole disposed in the second device and aligned to the first hole; and a sealing object for sealing the second hole. The first end links with the chamber, and the first circumference is different from the second circumference, the second hole is defined between the second end and a third end with a third circumference, and the second circumference and the third circumference are smaller than the first circumference.

Disclosed embodiments provide flexible performance, high dynamic range, microelectromechanical (MEMS) multipath digital microphones, which allow seamless, low latency transitions between audio signal paths without audible artifacts over interruptions in the audio output signal. Disclosed embodiments facilitate performance and power saving mode transitions maintaining high dynamic range capability.

A process for manufacturing MEMS devices, includes forming a first assembly, which comprises: a dielectric region; a redistribution region; and a plurality of unit portions. Each unit portion of the first assembly includes: a die arranged in the dielectric region; and a plurality of first and second connection elements, which extend to opposite faces of the redistribution region and are connected together by paths that extend in the redistribution region, the first connection elements being coupled to the die. The process further includes: forming a second assembly which comprises a plurality of respective unit portions, each of which includes a semiconductor portion and third connection elements; mechanically coupling the first and second assemblies so as to connect the third connection elements to corresponding second connection elements; and then removing at least part of the semiconductor portion of each unit portion of the second assembly, thus forming corresponding membranes.