An MEMS microphone is provided, comprising: a first substrate; a vibration diaphragm supported above the first substrate by a spacing portion, the first substrate, the spacing portion, and the vibration diaphragm enclosing a vacuum chamber, and a static deflection distance of the vibration diaphragm under an atmospheric pressure being less than a distance between the vibration diaphragm and the first substrate; and a floating gate field effect transistor outputting a varying electrical signal, the floating gate field effect transistor including a source electrode and a drain electrode both provided on the first substrate and a floating gate provided on the vibration diaphragm.

A method and circuit for obtaining a capacitive feedback signal of a capacitive feedback micro torsion mirror are provided to solve the problem of poor stability of the capacitive feedback signals of the micro torsion mirror. First, a pulse signal is used as a driving signal to drive the capacitive feedback micro torsion mirror to vibrate; it is ensured that the micro torsion mirror may twist freely for at least 0.5 cycles during an interval of two adjacent sets of driving pulses; secondly, the capacitive feedback signal of the capacitive feedback micro torsion mirror is extracted, and converted into a voltage signal; then, the voltage signal is amplified; and finally extracted during the interval of the two adjacent sets of driving pulses, and taken as a real capacitive feedback signal. A carrier generation circuit and a detection circuit are omitted, and the influence of the carrier generation circuit and the detection circuit on a capacitive feedback signal is eliminated. The circuit is more concise and the stability of the capacitive feedback signal is improved. Further, a specific driving form and signal extraction manner are used to obtain the real capacitive feedback signal.

The invention discloses a MEMS sensor detection device and a MEMS sensor system, wherein the MEMS sensor detection device comprises: a readout circuit used for analog signal processing of the output signal of the MEMS sensor to generate detection voltage; a cancellation voltage generation circuit used for generating a gravity cancellation voltage according to the detection voltage, wherein the gravity cancellation voltage and the gravity acceleration are in a positive proportional relationship; a selection circuit used for selecting the detection voltage output in a feedback phase and selecting the gravity cancellation voltage output in a gravity cancellation phase, wherein in one detection period, the feedback phase is located after the gravity cancellation phase; and a feedback circuit used for generating a feedback voltage according to the output voltage of the selection circuit, wherein the feedback voltage is in a positive proportional relationship with the output voltage of the selection circuit. The MEMS sensor detection device and the MEMS sensor system disclosed by the invention can cancel the influence of gravity acceleration and improve the sensitivity of the MEMS sensor system.

A projecting apparatus is provided, and includes a frame, a light source module, at least one collimator lens, at least one adhesive, and a microelectromechanical systems (MEMS) module. The frame includes a first frame portion and a second frame portion. The first frame portion has a carrier and a carrying bridge having an end connected to the carrier. The frame has a processing slot that uses the carrying bridge as a bottom thereof, and the carrying bridge has at least one thru-hole that is in spatial communication with the processing slot. The second frame portion is connected to the carrier and another end of the carrying bridge of the first frame portion. The at least one adhesive corresponds in position to the at least one thru-hole, and connects the at least one collimator lens onto the carrying bridge. The MEMS module is disposed on the second frame portion.

A method includes fusion bonding a handle wafer to a first side of a device wafer. The method further includes depositing a first mask on a second side of the device wafer, wherein the second side is planar. A plurality of dimple features is formed on an exposed portion on the second side of the device wafer. The first mask is removed from the second side of the device wafer. A second mask is deposited on the second side of the device wafer that corresponds to a standoff. An exposed portion on the second side of the device wafer is etched to form the standoff. The second mask is removed. A rough polysilicon layer is deposited on the second side of the device wafer. A eutectic bond layer is deposited on the standoff. In some embodiments, a micro-electro-mechanical system (MEMS) device pattern is etched into the device wafer.

A device includes a first transistor having a first source, a first gate, a first drain, and one or more electrodes. The first transistor serves as an inverter. The device also includes a second transistor having a second source, a second gate, and a second drain. The first and second sources are connected together. The first and second drains are connected together. The second transistor serves as an output, a driver, or both. The one or more electrodes, the second gate, or a combination thereof serve as tapped drains that are configured to sample a stepped voltage of the second transistor.

A device includes a first stage having a first optical switch, a first transistor connected to the first optical switch, and a second transistor connected to the first optical switch and the first transistor. The device also includes a second stage having a second optical switch, a third transistor connected to the second transistor and the second optical switch, and a fourth transistor connected to the second transistor, the second optical switch, and the third transistor.

A microelectromechanical device includes: a body accommodating a microelectromechanical structure; and a cap bonded to the body and electrically coupled to the microelectromechanical structure through conductive bonding regions. The cap including a selection module, which has first selection terminals coupled to the microelectromechanical structure, second selection terminals, and at least one control terminal, and which can be controlled through the control terminal to couple the second selection terminals to respective first selection terminals according, selectively, to one of a plurality of coupling configurations corresponding to respective operating conditions.

A sensor system includes first and second MEMS structures and a processing circuit. The first and second MEMS structures are configured to produce first and second output signals, respectively, in response to a physical stimulus. A method performed by the processing circuit entails receiving the first and second output signals and detecting a defective one of the first and second MEMS structures from the first and second output signals by determining that the first and second output signals are uncorrelated to one another. The method further entails utilizing only the first or the second output signal from a non-defective one of the MEMS structures to produce a processed output signal when one of the MEMS structures is determined to be defective and utilizing the first and second output signals from both of the MEMS structures to produce the processed output signal when neither of the MEMS structures is defective.

Aspects are directed to a MEMS device configurable to receive signals from a first, a second, a third, and a fourth signal source operating at a first, a second, a third, and a fourth frequency, respectively. The MEMS device may be configured to combine the first signal with the second signal generating a first combined signal, and to combine the third signal with the fourth signal generating a second combined signal. The first combined signal may be coupled to the first terminal of the MEMS device while the second combined signal may be coupled to the second terminal of the MEMS device. The first common terminal may be configured to produce an output associated with the second and fourth frequencies. The MEMS device may be further configured to derive from the produced output a signal indicative of nonlinearities or of changes in capacitance related to the MEMS device.