An apparatus for detecting the activity of persons or the state of infrastructures or objects influenced by persons by means of acceleration measurement. The device has an acceleration sensor which is arranged to react to a preset threshold value of a measured acceleration and, when the threshold value is exceeded, to trigger at least one of the actions of data storage, modification of a counter or transmission of a data telegram by radio. The apparatus further comprises an energy converter for converting a primary energy into electrical energy for operating the apparatus or the acceleration sensor. The energy converter is arranged to obtain the primary energy independently of an energy resulting from a measured acceleration.

A microelectromechanical system (MEMS) structure and method of forming the MEMS device, including forming a first metallization structure over a complementary metal-oxide-semiconductor (CMOS) wafer, where the first metallization structure includes a first sacrificial oxide layer and a first metal contact pad. A second metallization structure is formed over a MEMS wafer, where the second metallization structure includes a second sacrificial oxide layer and a second metal contact pad. The first metallization structure and second metallization structure are then bonded together. After the first metallization structure and second metallization structure are bonded together, patterning and etching the MEMS wafer to form a MEMS element over the second sacrificial oxide layer. After the MEMS element is formed, removing the first sacrificial oxide layer and second sacrificial oxide layer to allow the MEMS element to move freely about an axis.

A overhanging device cavity structure comprises a substrate and a cavity disposed in or on the substrate. The cavity comprises a first cavity side wall and a second cavity side wall opposing the first cavity side wall on an opposite side of the cavity from the first cavity side wall. A support extends from the first cavity side wall to the second cavity side wall and at least partially divides the cavity. A device is disposed on, for example in direct contact with, the support and extends from the support into the cavity.

A device includes a nozzle including a discharge end for discharging a fluid, a shutter plate including an aperture, the shutter plate positioned at the discharge end of the nozzle, a plurality of tethers coupled to the shutter plate, and a plurality of electrostatic actuators. Each of the plurality of electrostatic actuators are coupled to one or more of the plurality of tethers. The plurality of electrostatic actuators are configured to move the shutter plate between an open position and a closed position relative the discharge end of the nozzle. In the open position, the aperture is in fluid communication with the discharge end of the nozzle to permit fluid from the discharge end of the nozzle to flow through the aperture. In the closed position, at least a portion of the shutter plate inhibits fluid from the discharge end of the nozzle from flowing through the aperture.

A method and circuit for obtaining a capacitive feedback signal of a capacitive feedback micro torsion mirror are provided to solve the problem of poor stability of the capacitive feedback signals of the micro torsion mirror. First, a pulse signal is used as a driving signal to drive the capacitive feedback micro torsion mirror to vibrate; it is ensured that the micro torsion mirror may twist freely for at least 0.5 cycles during an interval of two adjacent sets of driving pulses; secondly, the capacitive feedback signal of the capacitive feedback micro torsion mirror is extracted, and converted into a voltage signal; then, the voltage signal is amplified; and finally extracted during the interval of the two adjacent sets of driving pulses, and taken as a real capacitive feedback signal. A carrier generation circuit and a detection circuit are omitted, and the influence of the carrier generation circuit and the detection circuit on a capacitive feedback signal is eliminated. The circuit is more concise and the stability of the capacitive feedback signal is improved. Further, a specific driving form and signal extraction manner are used to obtain the real capacitive feedback signal.

A micro-electro-mechanical-system (MEMS) device comprises an inertial component configured for being connected to a structure by a flexible connection allowing the inertial component to deform or move relative to the structure in response to an external stimulus applied to the structure. One or more resonant components are connected to the structure or inertial component, the resonant component(s) having resonant mode(s). Transduction unit(s) measures an oscillatory motion of the resonant component relative to the inertial component and/or structure. An electronic control unit applies a pump of electrostatic force to induce an oscillatory motion of the resonant component(s) in the resonant mode, the oscillatory motion being a non-linear function of a strength of the electrostatic force. The resonant component is configured to be coupled to the inertial component and/or the structure such that a deformation and/or motion of the inertial component in response to an external stimulus changes the strength of the pump, the electronic control unit configured for producing and outputting an output signal being a mathematical function of the measured oscillatory motion. A system for producing a neuromorphic output for a MEMS device exposed to external stimuli is also provided.

A MEMS microphone package is provided. The MEMS microphone package includes a substrate and a circuit device, the substrate has a conductive structure, and the circuit device has through silicon via structures that are electrically connected to the conductive structure. The MEMS microphone package also includes a sensor disposed on the substrate and having a connecting structure disposed on the bottom of the sensor. The connecting structure is electrically connected to the substrate and the circuit device. The MEMS microphone package further includes a cap covering the circuit device and the sensor and separated from the circuit device and the sensor.

The integrated CMOS-MEMS device includes a CMOS structure, a cap structure, and a MEMS structure. The CMOS structure, fabricated on a first substrate, includes at least one conducting layer. The cap structure, including vias passing through the cap structure, has an isolation layer deposited on its first side and has a conductive routing layer deposited on its second side. The MEMS structure is deposited between the first substrate and the cap structure. The integrated CMOS-MEMS device also includes a conductive connector that passes through one of the vias and through an opening in the isolation layer on the cap structure. The conductive connector conductively connects a conductive path in the conductive routing layer on the cap structure with the at least one conducting layer of the CMOS structure.

A method comprises applying a driver voltage to an electrostatic comb drive of an MEMS apparatus and overlaying the driver voltage with a periodic voltage signal. The method further comprises determining a torsion angle of a mirror body of the MEMS apparatus based on the periodic voltage signal.

A manufacturing method for a micromechanical component. The method includes: providing an ASIC component including first front and rear sides, a strip conductor unit being provided at the first front side; providing a MEMS component including second front and rear sides, a micromechanical functional element situated in a cavity at the second front side; bonding the first front side onto the second front side; back-thinning the first rear side; forming vias starting from the back-thinned first rear side and from a redistribution unit on the first rear side, the vias electrically connecting the strip conductor unit to the redistribution unit; forming electrical contact elements on the redistribution unit; and back-thinning the second rear side. The back-thinning of the first and second rear side taking place so that a thickness of the stack made up of ASIC component and MEMS component is less than 300 micrometers.