Disclosed herein is a MEMS ASIC. In some examples, the MEMS ASIC can include a MEMS, an analog front end (AFE) amplifier, an analog-to-digital converter (ADC), an overload detector, and a high-ohmic (HO) block. The HO block and the MEMS can form a high-pass filter (HPF). The impedance of the HO block can be related to the DC operating level of the AFE amplifier and the cutoff frequency of the HPF. In some examples, an overload event can occur, and the overload detector can be configured to adjust the impedance of the HO block to reduce the settling time of the MEMS ASIC. Methods of using the MEMS ASIC to reduce the settling time of the MEMS ASIC due to an overload event are disclosed herein.

An light deflection device includes an light deflector having first and second piezoelectric actuators which cause a mirror unit to reciprocatingly turn around a resonant axis and a non-resonant axis, respectively, a drive unit which supplies first and second drive voltages, a swing angle fluctuation width detection unit which detects a first swing angle fluctuation width of the mirror unit around the resonant axis, a sensitivity equivalent value detection unit which detects a sensitivity equivalent value on the basis of a detected value of a second drive voltage fluctuation width and a detected value of the first swing angle fluctuation width, and a determination unit which determines whether a non-resonant axis side swing state of the mirror unit around the non-resonant axis is normal on the basis of a detected value of the sensitivity equivalent value.

A sensor device includes a first and second Micro-Electro-Mechanical (MEM) structures. The first MEM structure includes a first heating element on a first layer of the first MEM structure. The first heating element includes an input adapted to receive an input signal. The first MEM structure also includes a first temperature sensing element on a second layer of the first MEM structure. The second MEM structure includes a second heating element on a first layer of the second MEM structure and a second temperature sensing element on a second layer of the second MEM structure. An output circuit has a first input coupled to the first temperature sensing element and a second input coupled to the second temperature sensing element.

A MEMS sensor includes a housing with an interior volume, wherein the housing has an access port to the interior volume, a MEMS component in the housing, and a protection structure, which reduces an introduction of electromagnetic disturbance radiation with a wavelength in the range between 10 nm and 20 μm into the interior volume through the access port and reduces a propagation of the electromagnetic disturbance radiation in the interior volume.

In one or more embodiments, an apparatus includes a substrate and die package, a thermal transfer plate positioned adjacent to the substrate and die package for cooling the substrate and die package, wherein at least one electrical path extends through the thermal transfer plate for transmitting power from a power module to the substrate and die package, and a microelectromechanical system (MEMS) module comprising a plurality of air movement cells for dissipating heat from the thermal transfer plate.

A microelectromechanical system (MEMS) device includes at least one substrate, a lid, a MEMS component, a sensor, and a power supply. The lid is coupled to the substrate so that the substrate and the lid cooperatively define an interior cavity. The MEMS component is disposed within the interior cavity. The sensor is disposed within the interior cavity and is arranged to detect a parameter of the interior cavity. The power supply provides current to the sensor. The power supply is configured to control current during a ramp-up transition of the current and a ramp-down transition of the current such that the ramp-up transition and the ramp-down transition have attenuated high-frequency components.

Unwanted or parasitic capacitances may occur in MEMS switches. To reduce or eliminate the impact of the unwanted or parasitic capacitance, an extra device, such as a second MEMS switch, may be coupled to a first MEMS switch to divert the unwanted or parasitic capacitance to ground.

A projecting apparatus is provided, and includes a frame, a light source module, and a microelectromechanical systems (MEMS) module. The frame includes two lateral boards respectively arranged on two opposite sides thereof, and a transverse beam that connects the two lateral boards. Each of the two lateral boards has a guiding slot recessed in a portion thereof. The MEMS module is configured to transmit light emitted from the light source module, and includes a flexible circuit board, a first MEMS unit, and a second MEMS unit, the latter two of which are connected to the flexible circuit board. The first MEMS unit is inserted into the guiding slots of the two lateral boards. The second MEMS unit abuts against the two lateral boards and/or the transverse beam. The first MEMS unit and the second MEMS unit have a predetermined angle there-between by the second frame portion.

A bending transducer includes a deflectable element, a microelectromechanical transducer extending along a centroid fiber of the deflectable element deflecting the deflectable element in a first direction when a first electrical signal is applied, and a second microelectromechanical transducer extending along the centroid fiber deflecting the deflectable element in a second direction opposite to the first direction when a second electrical signal is applied, the centroid fiber being located between sides of the first and second microelectromechanical transducers facing away from each other, and an electrical control configured to vary the first and second electrical signals depending on an input signal such that a change of the first electrical signal and a change of the second electrical signal depends on the electrical input signal, and the phases of the first and second electrical signals are shifted relative to each other. A bending transducer operated as sensor is also presented.

An integrated CMOS-MEMS device includes a first substrate having a CMOS device, a second substrate having a MEMS device, an insulator layer disposed between the first substrate and the second substrate, a dischargeable ground-contact, an electrical bypass structure, and a contrast stress layer. The first substrate includes a conductor that is conductively connecting to the CMOS devices. The electrical bypass structure has a conducting layer conductively connecting this conductor of the first substrate with the dischargeable ground-contact through a process-configurable electrical connection. The contrast stress layer is disposed between the insulator layer and the conducting layer of the electrical bypass structure.