B81B7/008

Overload recovery optimization in microelectromechanical system application specific integrated circuit
11661334 · 2023-05-30 · ·

Disclosed herein is a MEMS ASIC. In some examples, the MEMS ASIC can include a MEMS, an analog front end (AFE) amplifier, an analog-to-digital converter (ADC), an overload detector, and a high-ohmic (HO) block. The HO block and the MEMS can form a high-pass filter (HPF). The impedance of the HO block can be related to the DC operating level of the AFE amplifier and the cutoff frequency of the HPF. In some examples, an overload event can occur, and the overload detector can be configured to adjust the impedance of the HO block to reduce the settling time of the MEMS ASIC. Methods of using the MEMS ASIC to reduce the settling time of the MEMS ASIC due to an overload event are disclosed herein.

MICROELECTROMECHANICAL SYSTEMS ("MEMS") DEVICE HAVING A BUILT-IN SELF-TEST ("BIST") AND A METHOD OF APPLICATION OF A BIST TO MEASURE MEMS HEALTH
20220332569 · 2022-10-20 ·

A microelectromechanical systems (MEMS) device includes a MEMS die and an electrical circuit electrically connected to the MEMS die. The electrical circuit includes a first capacitor that produces a first output signal based on a signal received from the MEMS die, and a second capacitor that produces a second output signal based on a signal received from the MEMS die. The electrical circuit is configured to determine a nominal capacitance of the MEMS die based on a ratio of the first output signal to the second output signal and a ratio of the capacitances of the first and second capacitors.

REDUCED NOISE MEMS DEVICE WITH FORCE FEEDBACK
20220337947 · 2022-10-20 ·

A microelectromechanical systems (MEMS) device comprises a diaphragm assembly and a force feedback system. The diaphragm assembly includes a first diaphragm and a second diaphragm facing the first diaphragm, with a low pressure region being defined therebetween. The diaphragm assembly further includes a first plurality of electrodes, a second plurality of electrodes, and a third plurality of electrodes. A solid dielectric is spaced between the first and second diaphragms and includes a plurality of apertures. Each electrode of the first, second, and third pluralities of electrodes is disposed at least partially within an aperture of the plurality of apertures. The force feedback system receives output from the diaphragm assembly and produces a feedback voltage that is applied to the diaphragm assembly to produce an electrostatic force on the diaphragm assembly that counters a low-frequency pressure across the diaphragm assembly.

IR illumination module for MEMS-based eye tracking

An illumination system having a reduced z-dimensional profile, which is achieved by reflecting light out of plane relative to a light source that generated the light, is disclosed herein. This illumination system includes an IR illumination device, a collimating optic, a turning optic, and a waveguide. The turning optic is specially configured to receive IR light from the IR illumination device and to reflect the IR light out of plane relative to the emission orientation of the IR illumination device. The reflected IR light is reflected towards the collimating optic. The waveguide is positioned in a fixed position relative to the collimating optic and includes an input port or grating to receive the collimated IR light. By reflecting light out of the plane, the size of the illumination system can be beneficially reduced in the z-direction.

Microelectromechanical microphone

A microelectromechanical microphone includes: a substrate; a sensor chip, integrating a microelectromechanical electroacoustic transducer; and a control chip operatively coupled to the sensor chip. In one embodiment, the sensor chip and the control chip are bonded to the substrate, and the sensor chip overlies, or at least partially overlies, the control chip. In another embodiment, the sensor is bonded to the substrate and a barrier is located around at least a portion of the sensor chip.

Slew rate limiter systems, devices, and methods

Devices, systems, and methods for limiting a slew rate of a driven device. In some embodiments, the device for limiting a slew rate of the driven device includes one or more slew rate limiting field-effect transistors (FETS) connected between a first circuit node and a node of the driven device, and a first control circuit. In some embodiments, the one or more first slew rate limiting FETs and the first control circuit are configured to set a rate at which the driven device is charged or discharged. In some embodiments, the first control circuit is within a voltage divider and the current flowing through the voltage divider is proportionally mirrored to the one or more first slew rate limiting FETs wherein the current mirror ratio is selected to ensure that a rate at which a capacitance of the driven device changes over time is below a specified limit.

Demodulation phase calibration using external input

A MEMS device may output a signal during operation that may include an in-phase component and a quadrature component. An external signal having a phase that corresponds to the quadrature component may be applied to the MEMS device, such that the MEMS device outputs a signal having a modified in-phase component and a modified quadrature component. A phase error for the MEMS device may be determined based on the modified in-phase component and the modified quadrature component.

3D NAND FLASH MEMORY DEVICES AND RELATED ELECTRONIC SYSTEMS
20230143421 · 2023-05-11 ·

A microelectronic device comprises local digit line structures, global digit line structures, source line structures, sense transistors, read transistors, and write transistors. The local digit line structures are coupled to strings of memory cells. The global digit line structures overlie the local digit line structures. The source line structures are interposed between the local digit line structures and the global digit line structures. The sense transistors are interposed between the source line structures and the global digit line structures, and are coupled to the local digit line structures and the source line structures. The read transistors are interposed between and are coupled to the sense transistors and the global digit line structures. The write transistors are interposed between and are coupled to the global digit line structures and the local digit line structures. Additional microelectronic devices, memory devices, and electronic systems are also described.

MEMS Sensor Device Package Housing with an Embedded Controllable Device
20170369305 · 2017-12-28 ·

A microelectromechanical system (MEMS) sensor device includes a package housing having a top member, bottom member, and a spacer coupled the top member to the bottom member, defining a cavity. At least one sensor circuit and a MEMS sensor disposed within the cavity of the package housing. A first opening formed on the package housing a control device embedded within the package housing is electrically coupled to the sensor circuit and is controlled to tune the MEMS sensor from a directional mode to an omni-directional mode.

CIRCUIT FOR DETECTION OF FAILURE OF A MOVABLE MEMS MIRROR
20170363506 · 2017-12-21 · ·

Disclosed herein is a circuit for determining failure of a movable MEMS mirror. The circuit includes an integrator receiving an opening angle signal representing an opening angle of the movable MEMS mirror, and a differentiator receiving the opening angle signal. A summing circuit is configured to sum the integrator output and the differentiator output. A comparison circuit is configured to determine whether the sum of the integrator output and differentiator output is not within a threshold window. An indicator circuit is configured to generate an indicator signal indicating that the movable MEMS mirror has failed based on the comparison circuit indicating that the sum of the integrator output and differentiator output is not within the threshold window.