An apparatus includes a microelectromechanical system (MEMS) device having a diaphragm and a back plate; a clipping circuit coupled to the MEMS device, wherein the clipping circuit is configured to clip an output signal of the MEMS device so that the maximum signal drawn by a buffer is substantially constant over a temperature range; and an integrated circuit coupled to the clipping circuit, the integrated circuit including the buffer.

A process for manufacturing MEMS devices, includes forming a first assembly, which comprises: a dielectric region; a redistribution region; and a plurality of unit portions. Each unit portion of the first assembly includes: a die arranged in the dielectric region; and a plurality of first and second connection elements, which extend to opposite faces of the redistribution region and are connected together by paths that extend in the redistribution region, the first connection elements being coupled to the die. The process further includes: forming a second assembly which comprises a plurality of respective unit portions, each of which includes a semiconductor portion and third connection elements; mechanically coupling the first and second assemblies so as to connect the third connection elements to corresponding second connection elements; and then removing at least part of the semiconductor portion of each unit portion of the second assembly, thus forming corresponding membranes.

The mirror group is formed by a monolithic frame bent along a bending line and including a first and a second supporting portions carrying, respectively, a first and a second chips forming two micromirrors made using MEMS technology. The first and second supporting portions are arranged on opposite sides of the bending line of the frame, angularly inclined with respect to each other. The mirror group is obtained by separating a shaped metal tape carrying a plurality of frames, having flexible electric connection elements. After attaching the chips, the frames are precut, bent along the bending line, and separated.

Compositions and methods related to straining defect doped materials as well as their methods of use in electrical circuits are generally described.

A circuit includes a cross-talk compensation component including a power profile reconstruction component for reconstructing the power profile of a digital microphone coupled to a microelectromechanical (MEMS) device, wherein the power profile represents power consumption of the digital microphone over time between at least two operational modes of the digital microphone, and a reconstruction filter for modeling thermal and/or acoustic properties of the digital microphone; and a subtractor having a first input for receiving a signal from the digital microphone, a second input coupled to the cross-talk compensation component, and an output for providing a digital output signal.

A sensor package can include a substrate including a plurality of layers. The plurality of layers can include a first pair of layers and a second pair of layers different from the first pair of layers. The substrate can have a first side and a second side opposite the first side. The sensor package can include a transducer coupled to the second side of the substrate. The sensor package can include an inductor electrically coupled to the transducer. The inductor can be configured as a single layer trace on an inductor layer within the substrate and disposed between the first pair of layers within the substrate. The first pair of layers can be more distal from the second side of the substrate than the second pair of layers.

This application relates to an integrated circuit die (200) comprising a MEMS transducer structure (101) integrated with associated electronic circuitry (102). The electronic circuitry comprises a plurality of transistors and associated interconnections and is formed in a first area (103) of the die from a first plurality (104) of layers, e.g. formed by CMOS metal (107) and dielectric (108) layers and possibly doped areas (106) of substrate (105). The MEMS transducer structure is formed in a second area (111) of the die and is formed, at least partly, from a second plurality (112) of layers which are separate to the first plurality of layers. At least one filter circuit (201) is formed from said second plurality of layers overlying the plurality of transistors of the electronic circuitry (102). The second plurality of layers comprise at least a first metal layer (115, 117) which is patterned to form a first electrode of the MEMS transducer and at least a resistor, capacitor electrode or inductor element (203a, 203b) of the filter circuit.

A sensor has an electronic chip and a sensor chip which are arranged within a functional volume which is at the most 4-5 mm long, a maximum 2-3 mm wide, and the maximum height is 0.5-0.8 mm, thereby potentially providing a compact sensor.

A microelectromechanical device includes: a body accommodating a microelectromechanical structure; and a cap bonded to the body and electrically coupled to the microelectromechanical structure through conductive bonding regions. The cap including a selection module, which has first selection terminals coupled to the microelectromechanical structure, second selection terminals, and at least one control terminal, and which can be controlled through the control terminal to couple the second selection terminals to respective first selection terminals according, selectively, to one of a plurality of coupling configurations corresponding to respective operating conditions.

A component which can be produced at wafer level has a first chip and a second chip connected thereto. The connection is (at least partially) established via a first and a second connecting structure and a first and a second contact structure of the second chip. An adaptation structure between the first chip and the first connecting structure equalizes a height difference between the first and the second contact structure.