A microelectromechanical device includes a substrate, a first structural layer, and a second structural layer of semiconductor material. A sensing mass extends in the first structural layer and is coupled to the substrate by first elastic connections to enable oscillation of the sensing mass in a sensing direction perpendicular to the substrate by a maximum amount relative to a resting position of the sensing mass. An out-of-plane stopper structure includes an anchorage fixed to the substrate and a mechanical end-of-travel structure, which extends in the second structural layer, faces the sensing mass, and is separated therefrom by a gap having a width smaller than the maximum displacement distance of the sensing mass. The mechanical end-of-travel structure is coupled to the anchorage by second elastic connections that enable movement of the mechanical end-of-travel structure in the sensing direction in response to an impact of the sensing mass.

A microelectromechanical device includes a substrate, a first structural layer, and a second structural layer of semiconductor material. A sensing mass extends in the first structural layer and is coupled to the substrate by first elastic connections to enable oscillation of the sensing mass in a sensing direction perpendicular to the substrate by a maximum amount relative to a resting position of the sensing mass. An out-of-plane stopper structure includes an anchorage fixed to the substrate and a mechanical end-of-travel structure, which extends in the second structural layer, faces the sensing mass, and is separated therefrom by a gap having a width smaller than the maximum displacement distance of the sensing mass. The mechanical end-of-travel structure is coupled to the anchorage by second elastic connections that enable movement of the mechanical end-of-travel structure in the sensing direction in response to an impact of the sensing mass.

A process for manufacturing a combined microelectromechanical device includes forming, in a die of semiconductor material, at least a first and a second microelectromechanical structure, performing a first bonding phase to bond a cap to the die via a bonding region or adhesive to define at least a first and a second cavity at the first and, respectively, second microelectromechanical structures, the cavities being at a controlled pressure, forming an access channel through the cap in fluidic communication with the first cavity to control the pressure value inside the first cavity in a distinct manner with respect to a respective pressure value inside the second cavity, and performing a second bonding phase, after which the bonding region deforms to hermetically close the first cavity with respect to the access channel.

A process for manufacturing a combined microelectromechanical device includes forming, in a die of semiconductor material, at least a first and a second microelectromechanical structure, performing a first bonding phase to bond a cap to the die via a bonding region or adhesive to define at least a first and a second cavity at the first and, respectively, second microelectromechanical structures, the cavities being at a controlled pressure, forming an access channel through the cap in fluidic communication with the first cavity to control the pressure value inside the first cavity in a distinct manner with respect to a respective pressure value inside the second cavity, and performing a second bonding phase, after which the bonding region deforms to hermetically close the first cavity with respect to the access channel.

A method includes forming an etch stop layer over a first side of a device wafer. The method also includes forming a polysilicon layer over the etch stop layer. A handle wafer is fusion bonded to the first side of the device wafer. A eutectic bond layer is formed on a second side of the device wafer. A micro-electro-mechanical system (MEMS) features are etched into the second side of the device wafer to expose the etch stop layer. The exposed etch stop layer is removed to expose the polysilicon layer. The exposed polysilicon layer is removed to expose a cavity formed between the handle wafer and the device wafer.

A method includes forming an etch stop layer over a first side of a device wafer. The method also includes forming a polysilicon layer over the etch stop layer. A handle wafer is fusion bonded to the first side of the device wafer. A eutectic bond layer is formed on a second side of the device wafer. A micro-electro-mechanical system (MEMS) features are etched into the second side of the device wafer to expose the etch stop layer. The exposed etch stop layer is removed to expose the polysilicon layer. The exposed polysilicon layer is removed to expose a cavity formed between the handle wafer and the device wafer.

A fluidic device for capturing or detecting a sample substance contained in a solution includes at least two continuous circulation flow channels selected from the group consisting of: a first type continuous circulation flow channel which is formed of a first circulation flow channel and a second circulation flow channel and which is configured to circulate the solution in the first circulation flow channel and then circulate the solution in the second circulation flow channel; and a second type continuous circulation flow channel which is formed of a third circulation flow channel and a fourth circulation flow channel and which is configured to circulate the solution in the third circulation flow channel and then circulate and mix the solution in both of the third and fourth circulation flow channels, wherein any one of the circulation flow channels has a capturing section which captures the sample substance, and/or a detecting section which detects the sample substance.

A fluidic device for capturing or detecting a sample substance contained in a solution includes at least two continuous circulation flow channels selected from the group consisting of: a first type continuous circulation flow channel which is formed of a first circulation flow channel and a second circulation flow channel and which is configured to circulate the solution in the first circulation flow channel and then circulate the solution in the second circulation flow channel; and a second type continuous circulation flow channel which is formed of a third circulation flow channel and a fourth circulation flow channel and which is configured to circulate the solution in the third circulation flow channel and then circulate and mix the solution in both of the third and fourth circulation flow channels, wherein any one of the circulation flow channels has a capturing section which captures the sample substance, and/or a detecting section which detects the sample substance.

An integrated structure of a MEMS microphone and an air pressure sensor, and a fabrication method for the integrated structure, the structure including a base substrate; a vibrating membrane, back electrode, upper electrode, and lower electrode formed on the base substrate, as well as a sacrificial layer formed between the vibrating membrane and the back electrode and between the upper electrode and the lower electrode; a first integrated circuit electrically connected to the vibrating membrane and the back electrode respectively; and a second integrated circuit electrically connected to the lower electrode and the upper electrode respectively, wherein a region of the base substrate corresponding to the vibrating membrane is provided with a back cavity; the sacrificial layer between the vibrating membrane and the back electrode is hollowed out to from a vibrating space that communicates with the exterior of the integrated structure, and the sacrificial layer between the upper electrode and the lower electrode is hollowed out to form a closed space; and the integrated circuits are formed on a chip, thereby reducing the interference of connection lines on the performance of a microphone, reducing the introduction of noise, reducing the size of a product and reducing power consumption.

An integrated structure of a MEMS microphone and an air pressure sensor, and a fabrication method for the integrated structure, the structure including a base substrate; a vibrating membrane, back electrode, upper electrode, and lower electrode formed on the base substrate, as well as a sacrificial layer formed between the vibrating membrane and the back electrode and between the upper electrode and the lower electrode; a first integrated circuit electrically connected to the vibrating membrane and the back electrode respectively; and a second integrated circuit electrically connected to the lower electrode and the upper electrode respectively, wherein a region of the base substrate corresponding to the vibrating membrane is provided with a back cavity; the sacrificial layer between the vibrating membrane and the back electrode is hollowed out to from a vibrating space that communicates with the exterior of the integrated structure, and the sacrificial layer between the upper electrode and the lower electrode is hollowed out to form a closed space; and the integrated circuits are formed on a chip, thereby reducing the interference of connection lines on the performance of a microphone, reducing the introduction of noise, reducing the size of a product and reducing power consumption.