Patent classifications
B81B7/04
METHOD FOR SEALING CAVITIES USING MEMBRANES
A method for sealing cavities using membranes, the method including a) forming cavities arranged in a matrix, of a depth p, a characteristic dimension a, and spaced apart by a spacing b; and b) forming membranes, sealing the cavities, by transferring a sealing film. The method further includes a step a1), executed before step b), of forming a first contour on the front face and/or on the sealing face, the first contour comprising a first trench having a width L and a first depth p1, the formation of the first contour being executed such that after step b) the cavities are circumscribed by the first contour, said first contour being at a distance G from the cavities between one-fifth of b and five b.
METHOD FOR SEALING CAVITIES USING MEMBRANES
A method for sealing cavities using membranes, the method including a) forming cavities arranged in a matrix, of a depth p, a characteristic dimension a, and spaced apart by a spacing b; and b) forming membranes, sealing the cavities, by transferring a sealing film. The method further includes a step a1), executed before step b), of forming a first contour on the front face and/or on the sealing face, the first contour comprising a first trench having a width L and a first depth p1, the formation of the first contour being executed such that after step b) the cavities are circumscribed by the first contour, said first contour being at a distance G from the cavities between one-fifth of b and five b.
Microfluidic chips with one or more vias filled with sacrificial plugs
Techniques regarding microfluidic chips with one or more vias filled with sacrificial plugs and/or manufacturing methods thereof are provided herein. For example, one or more embodiments described herein can comprise an apparatus, which can comprise a silicon device layer of a microfluidic chip comprising a plurality of vias extending through the silicon device layer. The plurality of vias comprise greater than or equal to about 100 vias per square centimeter of a surface of the silicon device layer and less than or equal to about 100,000 vias per square centimeter of the surface of the silicon device layer. Additionally, the apparatus can comprise a plurality of sacrificial plugs positioned in the plurality of vias.
Method for setting a pressure in a cavern formed with the aid of a substrate and of a substrate cap, semiconductor system, in particular, wafer system
A method for setting a pressure in a cavern formed using a substrate and a substrate cap, the cavern being part of a semiconductor system, including an additional cavern formed with using the substrate and of the substrate cap, a microelectromechanical system being situated in the cavern, an additional microelectromechanical system being situated in the additional cavern, a diffusion area being situated in the substrate and/or in the substrate cap, the method includes a gas diffusing with the aid of the diffusion area from the surroundings into the cavern, during the diffusing, a diffusivity and/or a diffusion flow of the gas from the surroundings into the cavern being greater than an additional diffusivity and/or an additional diffusion flow of the gas from the surroundings into the additional cavern, and/or during the diffusing, the additional cavern being at least essentially protected from a penetration of the gas into the additional cavern.
Method for setting a pressure in a cavern formed with the aid of a substrate and of a substrate cap, semiconductor system, in particular, wafer system
A method for setting a pressure in a cavern formed using a substrate and a substrate cap, the cavern being part of a semiconductor system, including an additional cavern formed with using the substrate and of the substrate cap, a microelectromechanical system being situated in the cavern, an additional microelectromechanical system being situated in the additional cavern, a diffusion area being situated in the substrate and/or in the substrate cap, the method includes a gas diffusing with the aid of the diffusion area from the surroundings into the cavern, during the diffusing, a diffusivity and/or a diffusion flow of the gas from the surroundings into the cavern being greater than an additional diffusivity and/or an additional diffusion flow of the gas from the surroundings into the additional cavern, and/or during the diffusing, the additional cavern being at least essentially protected from a penetration of the gas into the additional cavern.
Dual micro-electro mechanical system and manufacturing method thereof
A micro electro mechanical system (MEMS) includes a circuit substrate, a first MEMS structure disposed over the circuit substrate, and a second MEMS structure disposed over the first MEMS structure.
Dual micro-electro mechanical system and manufacturing method thereof
A micro electro mechanical system (MEMS) includes a circuit substrate, a first MEMS structure disposed over the circuit substrate, and a second MEMS structure disposed over the first MEMS structure.
Polymer surface with t-shaped microstructure and fabrication method therefor and applications thereof
The present invention discloses polymer surfaces with T-shaped microstructure and their fabrication method and applications. The polymer surfaces with the T-shaped microstructure are characterized in that T-shaped microposts arrange orderly on them, and nanobulges arrange orderly on the top surfaces of the micronails of the T-shaped microposts. A flexible insert is designed and manufactured according to the geometry of the T-shaped microposts, and nanogrooves are manufactured on the cavity surface of an injection mold according to the geometry of the nanobulges on the top surfaces of the micronails. The flexible insert is mounted on the injection mold cavity. An injection molding machine is used to inject the molten polymer into the injection mold cavity. Then the polymer surfaces with the T-shaped microposts, on the top surfaces of the micronails of which the nanobulges arrange orderly, are molded. The polymer surfaces with the T-shaped microstructure exhibit robust Cassie-Baxter state and moderate surface adhesion to water droplets, and can be used for quantitative collection, lossless transportation or micromixing of microdroplets.
Polymer surface with t-shaped microstructure and fabrication method therefor and applications thereof
The present invention discloses polymer surfaces with T-shaped microstructure and their fabrication method and applications. The polymer surfaces with the T-shaped microstructure are characterized in that T-shaped microposts arrange orderly on them, and nanobulges arrange orderly on the top surfaces of the micronails of the T-shaped microposts. A flexible insert is designed and manufactured according to the geometry of the T-shaped microposts, and nanogrooves are manufactured on the cavity surface of an injection mold according to the geometry of the nanobulges on the top surfaces of the micronails. The flexible insert is mounted on the injection mold cavity. An injection molding machine is used to inject the molten polymer into the injection mold cavity. Then the polymer surfaces with the T-shaped microposts, on the top surfaces of the micronails of which the nanobulges arrange orderly, are molded. The polymer surfaces with the T-shaped microstructure exhibit robust Cassie-Baxter state and moderate surface adhesion to water droplets, and can be used for quantitative collection, lossless transportation or micromixing of microdroplets.
MEMS packages and methods of manufacture thereof
Microelectromechanical systems (MEMS) packages and methods of manufacture thereof are described. In an embodiment, a method of manufacturing a MEMS package may include attaching a MEMS structure having a capping structure thereon to a device wafer comprising a plurality of first devices formed therein to form a wafer level MEMS package; and singulating the device wafer having the MEMS structure attached thereto to form a plurality of chip scale MEMS packages.