The invention provides an LED chip having an integrated electrostatic switch for electromechanical control of the LED. A suspended beam switch floats above a conductive control electrode, and by a charging of the electrode may be attracted downward to make connection between an LED structure and an external electrode. Components are mounted on a common substrate so that a fully integrated LED with MEMS switch is formed. Methods for producing the LED chip are further provided, in which production of the switching mechanism is fully integrated with the production of the LED structure.

A micro-electromechanical-system (MEMS) switch (1) is formed in a substrate (2) and includes a first RF signal line (3) and a second RF signal line (4), a deformable membrane (5), an activator (7) configured to deform the membrane (5), a substrate track, and a membrane track. The RF signal lines (3, 4) are connected by one of the membrane track and the substrate track. A membrane RF ground (9, 10) is integrated into the membrane (5), and the membrane RF ground is electrically connected to a substrate RF ground (11, 12, 3, 14), the membrane RF ground framing and being formed parallel to at least one among the membrane track (8) and the substrate track, such that the RF ground (9, 10) closely follows the RF signal path, in order to guide the propagation of the RF signal of the first RF signal line (3) to the second RF signal line (4) when the switch is in the on state.

The present disclosure relates to a microelectromechanical systems (MEMS) package featuring a flat plate having a raised edge around its perimeter serving as an anti-stiction device, and an associated method of formation. A CMOS IC is provided having a dielectric structure surrounding a plurality of conductive interconnect layers disposed over a CMOS substrate. A MEMS IC is bonded to the dielectric structure such that it forms a cavity with a lowered central portion the dielectric structure, and the MEMS IC includes a movable mass that is arranged within the cavity. The CMOS IC includes an anti-stiction plate disposed under the movable mass. The anti-stiction plate is made of a conductive material and has a raised edge surrounding at least a part of a perimeter of a substantially planar upper surface.

The present disclosure provides an MEMS device, a method for manufacturing an MEMS device and an electronic device, and belongs to the field of Micro-Electro-Mechanical System technology. The MEMS device includes: a first dielectric substrate and a first component on the first dielectric substrate; the first component and the first dielectric substrate enclose a movable space; the first component has a first portion corresponding to the movable space; the first portion has at least one first opening, and at least one protruding structure is on a side of the first portion close to the first dielectric substrate; orthographic projections of the at least one protruding structure and the at least one first opening on the first dielectric substrate do not overlap with each other, and a thickness of each protruding structure is smaller than a height of the movable space.

A thermal metamaterial device comprises at least one MEMS thermal switch, including a substrate layer including a first material having a first thermal conductivity, and a thermal bus over a first portion of the substrate layer. The thermal bus includes a second material having a second thermal conductivity higher than the first thermal conductivity. An insulator layer is over a second portion of the substrate layer and includes a third material that is different from the first and second materials. A thermal pad is supported by a first portion of the insulator layer, the thermal pad including the second material and having an overhang portion located over a portion of the thermal bus. When a voltage is applied to the thermal pad, an electrostatic interaction occurs to cause a deflection of the overhang portion toward the thermal bus, thereby providing thermal conductivity between the thermal pad and the thermal bus.

The present invention generally relates to a mechanism for making the anchor of the MEMS switch more robust for current handling.

The disclosed subject matter provides thin films including a metal silicide and methods for forming such films. The disclosed subject matter can provide techniques for tailoring the electronic structure of metal thin films to produce desirable properties. In example embodiments, the metal silicide can comprise a platinum silicide, such as for example, PtSi, Pt.sub.2Si, or Pt.sub.3Si. For example, the disclosed subject matter provides methods which include identifying a desired phase of a metal silicide, providing a substrate, depositing at least two film layers on the substrate which include a first layer including amorphous silicon and a second layer including metal contacting the first layer, and annealing the two film layers to form a metal silicide. Methods can be at least one of a source-limited method and a kinetically-limited method. The film layers can be deposited on the substrate using techniques known in the art including, for example, sputter depositing.

A semiconductor device can include a first metal trace, a first via disposed on the first metal trace, a second metal trace disposed on the first via, and an insulator interposed between the first metal trace and the first via. The insulator can be configured to lower an energy barrier or redistribute structure defects or charge carriers, such that the first metal trace and the first via are electrically connected to each other when power is applied. The semiconductor device can further include a dummy via disposed on the first metal trace.

The disclosed subject matter provides thin films including a metal silicide and methods for forming such films. The disclosed subject matter can provide techniques for tailoring the electronic structure of metal thin films to produce desirable properties. In example embodiments, the metal silicide can comprise a platinum silicide, such as for example, PtSi, Pt.sub.2Si, or Pt.sub.3Si. For example, the disclosed subject matter provides methods which include identifying a desired phase of a metal silicide, providing a substrate, depositing at least two film layers on the substrate which include a first layer including amorphous silicon and a second layer including metal contacting the first layer, and annealing the two film layers to form a metal silicide. Methods can be at least one of a source-limited method and a kinetically-limited method. The film layers can be deposited on the substrate using techniques known in the art including, for example, sputter depositing.

A layer material which is particularly suitable for the realization of self-supporting structural elements having an electrode in the layer structure of a MEMS component. The self-supporting structural element is at least partially made up of a silicon carbonitride (Si.sub.1-x-yC.sub.xN.sub.y)-based layer.