A micro-electrical-mechanical-system (MEMS) switching device including a first MEMS switch having a first and second terminal, and a second MEMS switch having a third and fourth terminal. The device also includes first and second input conductors, and first and second output conductors. The first input conductor electrically connects the second terminal to the third terminal. The second input conductor electrically connects an input port to the first input conductor. The first output conductor electrically connects a first output port to the first terminal. The second output conductor electrically connects a second output port to the fourth terminal. A first path from the input port to the first output port, and a second path from the input port to the second output port, have substantially identical electrical characteristics.

A test circuit structure for determining a resonant frequency of the beam of a micro-electrical-mechanical-system (MEMS) switch includes the MEMS switch having a gate electrode, a switch contact, and the beam. The test circuit structure further includes a voltage supply configured to sequentially produce (i) a switch-close voltage configured to bring the beam in contact with the switch contact, and (ii) a non-zero switch-open voltage configured to release the beam from contact with the switch contact and produce an oscillating current. The test circuit structure further includes a waveform capture device configured to determine the resonant frequency of the beam by an analysis of a waveform produced by the oscillating current upon release of the beam. The waveform generator produces a high voltage to supply the switch-close voltage and produces a low voltage to supply the switch-open voltage.

A MEMS switch, a preparation method thereof, and an electronic apparatus. The MEMS switch includes: a substrate, a coplanar waveguide line structure disposed on a side of the substrate, an isolation structure disposed on a side of the coplanar waveguide line structure away from the substrate, a film bridge disposed on a side of the isolation structure away from the substrate. The coplanar waveguide line structure includes a first wire, a first DC bias line, a second wire, a second DC bias line and a third wire arranged at intervals sequentially. The second wire is one of an RF signal transmission line and a ground line, the first wire and the third wire are the other of the RF signal transmission line and the ground line. The film bridge is crossed between the first wire and third wire, and is connected with the first wire and the third wire respectively.

A method includes forming a microelectromechanical system (MEMS) device wherein the MEMS device includes a cavity and one or more release holes extending from a surface of the MEMS device to the cavity, and sealing at least a portion of the MEMS device including the one or more release holes with a film utilizing a physical vapor deposition (PVD) process.

The present disclosure provides an MEMS device, a method for manufacturing an MEMS device and an electronic device, and belongs to the field of Micro-Electro-Mechanical System technology. The MEMS device includes: a first dielectric substrate and a first component on the first dielectric substrate; the first component and the first dielectric substrate enclose a movable space; the first component has a first portion corresponding to the movable space; the first portion has at least one first opening, and at least one protruding structure is on a side of the first portion close to the first dielectric substrate; orthographic projections of the at least one protruding structure and the at least one first opening on the first dielectric substrate do not overlap with each other, and a thickness of each protruding structure is smaller than a height of the movable space.

A micromechanical hydrogen sensor switch creates a conducting channel between two electrical contacts in response to atmospheric H.sub.2 at or above a selected threshold. The switch uses 100 nW or less in standby mode, three orders of magnitude less than existing hydrogen sensors. The sensor converts mechanical stress caused by hydrogen absorption by palladium into movement of a cantilever structure. The switch provides automatic temperature and stress compensation, separate gates for providing bias to regulate H.sub.2 sensitivity, a heater-based reset mechanism, low contact adhesion, and reliable platinum-to-platinum metal contacts. The sensor detects hydrogen concentrations as low as 10 parts per million (ppm) in the atmosphere.