According to one embodiment, a sensor includes a base, first and second detection element portions, first to third resistor terminals, and first and second conductive terminals. The base includes first and second base regions. The first detection element portion is provided at the first base region. The first detection element portion includes a first detection element. The first detection element includes a first resistance member and a first conductive member. The first resistance member includes a first resistance portion and other portion. The first conductive member includes a first conductive portion and other portion. The second detection element portion is provided at the second base region. The second detection element portion includes a second detection element. The second detection element includes a second resistance member and a second conductive member. The second resistance member includes a second resistance portion and other portion. The second conductive member includes a second conductive portion and other portion.

A microphone includes a microelectromechanical system (MEMS) device responsive to sound waves or vibrations having an output coupled to a first node; a programmable gain amplifier or source follower having an input coupled to a second node, and an output for generating an analog signal, wherein the MEMS device output and the programmable gain amplifier or source follower input comprise a first nonlinear equivalent capacitance having a first capacitance-to-voltage (CV) profile; and a nonlinear capacitance component coupled to the first node, the second node, and at least one reference voltage node, wherein the nonlinear capacitance component comprises a second nonlinear equivalent capacitance having a second CV profile.

Encapsulated MEMS devices and methods of fabrication with wafer-level fabrication processes are described which address small molecule diffusion into hermetically sealed cavities. In some configurations a small molecule barrier layer, or hydrogen barrier layer, is formed during a back-end-of-the-line (BEOL) processing over a cap wafer including a planarized surface formed during a via reveal griding operation. In some configurations a small molecule barrier layer is not formed over the planarized surface during BEOL processing in order to allow an escape path for small molecules. In some configurations a small molecule barrier layer, or hydrogen barrier layer, is formed on a bottom side of a cap wafer prior to bonding the cap wafer to a device wafer during wafer-level fabrication.