A microelectromechanical device includes: a body accommodating a microelectromechanical structure; and a cap bonded to the body and electrically coupled to the microelectromechanical structure through conductive bonding regions. The cap including a selection module, which has first selection terminals coupled to the microelectromechanical structure, second selection terminals, and at least one control terminal, and which can be controlled through the control terminal to couple the second selection terminals to respective first selection terminals according, selectively, to one of a plurality of coupling configurations corresponding to respective operating conditions.

The present invention generally relates to an ovenized platform and a fabrication process thereof. Specifically, the invention relates to an ovenized hybrid Si/SiO.sub.2 platform compatible with typical CMOS and MEMS fabrication processes and methods of its manufacture. Embodiments of the invention may include support arms, CMOS circuitry, temperature sensors, IMUs, and/or heaters among other elements.

A microelectromechanical system structure and a method for fabricating the same are provided. A method for fabricating a MEMS structure includes the following steps. A first substrate is provided, wherein a transistor, a first dielectric layer and an interconnection structure are formed thereon. A second substrate is provided, wherein a second dielectric layer and a thermal stability layer are formed on the second substrate. The first substrate is bonded to the second substrate, and the second substrate removed. A conductive layer is formed within the second dielectric layer and electrically connected to the interconnection structure. The thermal stability layer is located between the conductive layer and the interconnection structure. A growth temperature of a material of the thermal stability layer is higher than a growth temperature of a material of the conductive layer and a growth temperature of a material of the interconnection structure.

A mirror drive device is provided as one capable of efficiently gaining a driving force. The mirror drive device 1 has a fixed frame 5; a movable portion 7 supported so as to be swingable relative to the fixed frame 5, through torsion bars 10a, 10b extending on an identical straight line, and being of a circular shape; a mirror 9 arranged on a principal surface 7a of the movable portion 7; and a permanent magnet 3 forming a magnetic field around the movable portion 7; the movable portion 7 has a drive coil 12 arranged below the mirror 9; the drive coil 12 is of a 2n-sided polygon shape (where n is an integer of 3 or more) when viewed from a direction orthogonal to the principal surface 7a, at least one side of which is orthogonal to a direction of the magnetic field F.

A semiconductor integrated device, comprising: a package defining an internal space and having an acoustic-access opening in acoustic communication with an environment external to the package; a MEMS acoustic transducer, housed in the internal space and provided with an acoustic chamber facing the acoustic-access opening; and a filtering module, which is designed to inhibit passage of contaminating particles having dimensions larger than a filtering dimension and is set between the MEMS acoustic transducer and the acoustic-access opening. The filtering module defines at least one direct acoustic path between the acoustic-access opening and the acoustic chamber.

A semiconductor device includes a first region; a second region that is peripheral to the first region; a substrate having a first surface and a second surface arranged opposite to the first surface; a stress-sensitive sensor disposed in the first region at the first surface of the substrate; a back end of line (BEOL) stack disposed on the first surface of the semiconductor chip that extends laterally from the MEMS element, in the first region, into the second region; a first cavity formed in the BEOL stack that exposes the sensitive area of the stress-sensitive sensor, wherein the first cavity extends entirely through the BEOL stack over the first region thereby exposing a sensitive area of the stress-sensitive sensor; and at least one stress-decoupling trench laterally spaced from the stress-sensitive sensor and laterally spaced from the first cavity with a portion of the BEOL stack interposed between.

A method of manufacturing a semiconductor substrate according to an embodiment includes a first step of forming a groove having a bottom surface and a side surface on which scallops are formed by performing a process including isotropic etching on a main surface of a substrate, a second step of performing at least one of a hydrophilic treatment on the side surface of the groove and a degassing treatment on the groove, and a third step of removing the scallops formed on the side surface of the groove and planarizing the side surface by performing anisotropic wet etching in a state where the bottom surface of the recess is present.

A method for producing a micro-pattern on surface of a wire is disclosed. The method includes a step of applying a nanoparticle solution to the wire to form a nanoparticle solution layer on the surface of the wire; and a step of irradiating the nanoparticle solution layer with a Bessel beam laser to induce sintering of nanoparticles, thereby forming a micro-pattern on the surface of the wire. It is possible to form a microelectrode pattern on a level of several to tens of micrometers on the surface of a micro-wire having a diameter on a scale of several tens to several hundreds of micrometers. Since a laser optical system with a long depth of focus is used, a micro-pattern with a uniform thickness can be formed on surface of a wire having a curvature in a simple.

A phase shifter includes: a first substrate; a signal electrode and a reference electrode on at least one side of an extension direction of the signal electrode; a first insulating layer covering the reference and signal electrodes; and at least one phase controlling unit above the first insulating layer. Each phase controlling unit includes a main body portion and at least one connection portion. Orthogonal projections of the main body portion and the signal electrode on the first substrate at least partially overlap each other. The main body portion and the first insulating layer have a gap therebetween, and the connection portion is connected between the main body portion and a portion of the first insulating layer covering the reference electrode. The main body portion includes first sub-electrodes short-circuited with each other, and at least some of the first sub-electrodes are connected to a same connection portion.

A semiconductor package device and a method of manufacturing a semiconductor package device are provided. The semiconductor package device includes a substrate, a first electronic component, a first dielectric layer, and a first hole. The substrate has a first surface and a second surface opposite to the first surface. The first electronic component is disposed on the first surface. The first dielectric layer is disposed on the second surface and has a third surface away from the substrate. The first hole extends from the first dielectric layer and the substrate. The first hole is substantially aligned with the first electronic component.