Disclosed is a multi-silicon on insulator (SOI) micromachined ultrasonic transducer (MUT) device. The device comprises a multi-SOI substrate and a MUT. The MUT is affixed to a surface of the multi-SOI substrate. The multi-SOI substrate has a first SOI layer and at least a second SOI layer disposed above the first SOI layer. The first SOI layer and the second SOI layer each comprise an insulating layer and a semiconducting layer. The first SOI layer further defines a cavity located under a membrane of a MUT and one or more trenches at least partially around a perimeter of the cavity.

A cavity type semiconductor package with a substrate and a cap is disclosed. The semiconductor package includes a first semiconductor die coupled to the substrate and a layer of flexible material on a surface of the cap. A trace is on the layer of flexible material. The cap is coupled to the substrate with the layer of flexible material and the trace between the cap and the substrate. A second semiconductor die is coupled to the layer of flexible material and the trace on the cap. The cap further includes an aperture to expose the second semiconductor die to the ambient environment. The layer of flexible material absorbs stress during operation cycles of the package induced by the different coefficient of thermal expansions of the cap and the substrate to reduce the likelihood of separation of the cap from the substrate.

In some embodiments, electromechanical systems including a semiconductor layer that has a planar surface and includes conductive and adjacent non-conductive regions and a hermetic seal applied above the planar surface and methods of manufacturing the systems are disclosed. In some embodiments, electromechanical devices that include first and second planar semiconductor layers are disclosed. Each of the semiconductor layers includes conductive regions, and at least one conductive region from each of the layers is electrically coupled to each other. Methods of manufacturing the electromechanical devices are also disclosed.

A light deflector includes: a conductor layer formed as an integral layer on an SOI oxide film layer; a piezoelectric element having an upper electrode, a piezoelectric film, and a conductor layer serving as a lower electrode; an interlayer insulating film covering the conductor layer and the piezoelectric element from the surface side; a plurality of wirings formed on the surface of the interlayer insulating film in such a manner as to extend in the region of the surface of the interlayer insulating film under which the conductor layer exists; and a ground electrode connected to the conductor layer.

A microelectronic socket structure and a method of forming the same. The socket structure comprises: a socket structure housing defining a cavity therein; and an interconnection structure including: a contact element disposed at least in part within the cavity, and configured to be electrically coupled to a corresponding microelectronic package, the contact element corresponding to one of a signal contact element or a ground contact element; and a conductive structure disposed at least in part within the cavity, electrically coupled to the contact element, and having an outer contour that is non-conformal with respect to an outer contour of the contact element.

According to one embodiment, a sensor includes a base, first and second detection element portions, first to third resistor terminals, and first and second conductive terminals. The base includes first and second base regions. The first detection element portion is provided at the first base region. The first detection element portion includes a first detection dement. The first detection dement includes a first resistance member and a first conductive member. The first resistance member includes a first resistance portion and other portion. The first conductive member includes a first conductive portion and other portion. The second detection element portion is provided at the second base region. The second detection dement portion includes a second detection element. The second detection element includes a second resistance member and a second conductive member. The second resistance member includes a second resistance portion and other portion. The second conductive member includes a second conductive portion and other portion.

A semiconductor package includes a semiconductor die including terminals, a plurality of leads, at least some of the leads being electrically coupled to the terminals within the semiconductor package, a sensor on a surface of the semiconductor die, a set of metal columns on the surface of the semiconductor die, the set of metal columns forming a perimeter around the sensor on the surface of the semiconductor die, and a mold compound surrounding the semiconductor die except for an area inside the perimeter on the surface of the semiconductor die such that the sensor is exposed to ambient air.

A first electronic component, such as a sensor having opposed first and second surfaces and a first thickness, is arranged on a support member with the second surface facing towards the support member. A second electronic component, such as an integrated circuit mounted on a substrate and having a second thickness less than the first thickness, is arranged on the support member with a substrate surface opposed the second electronic component facing towards the support member. A package molding material is molded onto the support member to encapsulate the second electronic component while leaving exposed the first surface of the first electronic component. The support member is then removed to expose the second surface of the first electronic component and the substrate surface of the substrate.

A capacitive transducer or microphone includes a first substrate of one or more layers and which includes a first surface, a first cavity in the first surface, and a mesa diaphragm that spans the first cavity. The capacitive transducer or microphone includes a second substrate fixed to the first substrate. The second substrate has one or more layers which includes a second cavity having a nonplanar (e.g., contoured or structured or stepped) bottom surface that faces the mesa diaphragm. A shape or relief of the bottom surface of the cavity may advantageously be, to at least some degree, complementary to a deformed shape of the diaphragm. The second substrate may include one or more acoustic holes, non-uniformly distributed thereacross. One or more vents may vent the second cavity.

Described examples include a micromechanical device having a substrate. The micromechanical device includes a MEMS element and a via between the MEMS element and the substrate, the via having a conductive layer extending from the substrate to the MEMS element and having a structural integrity layer on the conductive layer.