A method of fabricating a plurality of individual microelectromechanical transducer elements includes forming a plurality of microelectromechanical transducer elements on a wafer. Each microelectromechanical transducer element has a sensitive region with a membrane and a sensing element monitoring at least one measurand and generating an electrical signal correlated with the at least one measurand, and an electrical contact outputting the electrical signal. The method includes providing, for each microelectromechanical transducer element, a sealing structure around a sensitive region and an electrical connection connected to the electrical contact. The sealing structure and the electrical connection are made out of a reflow solder material. The method includes dicing the wafer to form individual microelectromechanical transducer elements.

A MEMS package including a fixed frame, a moveable platform and elastic restoring members is provided. The moveable platform is moved with respect to the fixed frame. The elastic restoring members are connected between the fixed frame and the moveable platform, and used to restore the moved moveable platform to an original position.

A method including fusion bonding a handle wafer to a first side of a device wafer. The method further includes depositing a hardmask on a second side of the device wafer, wherein the second side is planar. An etch stop layer is deposited over the hardmask and an exposed portion of the second side of the device wafer. A dielectric layer is formed over the etch stop layer. A via is formed within the dielectric layer. The via is filled with conductive material. A eutectic bond layer is formed over the conductive material. Portions of the dielectric layer uncovered by the eutectic bond layer is etched to expose the etch stop layer. The exposed portions of the etch stop layer is etched. A micro-electro-mechanical system (MEMS) device pattern is etched into the device wafer.

Example techniques to enable a flip chip underfill exclusion zone include use of bump barriers, films or etched substrate cavities to prevent underfill from reaching the flip chip underfill exclusion zone.

A semiconductor layer having an opening and a MEMS resonator formed in the opening is disposed between first and second substrates to encapsulate the MEMS resonator. An electrical contact that extends from the opening to an exterior of the MEMS device is formed at least in part within the semiconductor layer and at least in part within the first substrate.

A sensor includes: a redistribution layer comprising a first face and a second face opposite to each other; a first die electrically connected to the first face of the redistribution layer; a molding compound comprising a third face and a fourth face opposite to each other, wherein the third face of the molding compound is combined with the first face of the redistribution layer, and the molding compound encapsulates the first die on the side of the first face of the redistribution layer; and a sensing element electrically connected to the redistribution layer. The package assembly of the sensor allows more elements to be packaged together, and provides a better structural support or provides a better heat distribution for the package assembly, and at the same time, reduces the volume and costs of the entire package assembly.

The disclosed invention is a MEMS environmental sensor and preparation method thereof. A transfer cavity is produced in the middle of a transfer substrate of a MEMS environmental sensor, and a transfer medium is located inside the transfer cavity. The surface area of an input port is larger than the surface area of an output port. An elastic transfer membrane is provided on the surface of the input port, and an elastic pressure membrane is provided on the surface of the output port. A load bearing cavity is provided in a load bearing substrate, a magnetic sensing element is positioned inside the load bearing cavity, and the load bearing cavity partially overlaps with the output port. The surface area of the input port of the transfer cavity is larger than the surface area of the output port, and on the basis of Pascal's principle, differences in the volume of the transmission cavity are used to transform a small displacement in a region of large volume into a large displacement in a region of small volume. In addition, because the output port and the end of the output port at least partially overlap, and a magnetic sensing element is arranged in the load bearing cavity, a change in displacement is produced, producing a change in a magnetic field, that is converted into a change in electrical resistance, which provides high-sensitivity and low-power detection.

A device including an electrically conducting track arranged on a support includes a step of supply of the support, and a step of formation of the electrically conducting track on the support including a step of supply of a solution intended to be deposited on the support, a step of deposition of the solution by printing on the support. The step of supply of the solution is such that the solution supplied includes a mixture of a solvent, of a set of metal particles and of a metallic material having a melting point below that of the metal particles of the set of metal particles, and the method includes a step of melting of the metallic material which results in the formation of a solder of metallic material between metal particles of the set of metal particles.

A semiconductor device includes a substrate. A first semiconductor die including a microelectromechanical system (MEMS) is disposed over the substrate. A lid is disposed on the substrate around the first semiconductor die. A first encapsulant is deposited over the substrate and lid. A second encapsulant is deposited into the lid.

A method of manufacturing a panel transducer scale package includes securing acoustic components at predetermined locations on a first carrier substrate with a first surface of the acoustic components positioned adjacent to the first carrier substrate. ASIC components are also secured at predetermined locations on the first carrier substrate with a first surface of the ASIC components positioned adjacent to the first carrier substrate. Photoresist resin is applied over the acoustic components and the ASIC components such that a second surface of the acoustic components is left exposed from the photoresist resin. The first carrier substrate is removed to expose the first surface of the acoustic components and the first surface of the ASIC components. A buildup layer is formed including electrical pathways between each of the acoustic components and the ASIC components, and the photoresist resin is removed.