The present disclosure provides a method for manufacturing a CMOS-MEMS structure. The method includes etching a cavity on a first surface of a cap substrate; bonding the first surface of the cap substrate with a sensing substrate; thinning a second surface of the sensing substrate, the second surface being opposite to a third surface of the sensing substrate bonded to the cap substrate; etching the second surface of the sensing substrate; patterning a portion of the second surface of the sensing substrate to form a plurality of bonding regions; depositing an eutectic metal layer on the plurality of bonding regions; etching a portion of the sensing substrate under the cavity to form a movable element; and bonding the sensing substrate to a CMOS substrate through the eutectic metal layer.

A MEMS device is provided. The MEMS device includes a substrate having at least one contact, a first dielectric layer disposed on the substrate, at least one metal layer disposed on the first dielectric layer, a second dielectric layer disposed on the first dielectric layer and the metal layer and having a recess structure, and a structure layer disposed on the second dielectric layer and having an opening. The opening is disposed to correspond to the recess structure, and the cross-sectional area at the bottom of the opening is smaller than the cross-sectional area at the top of the recess structure. The MEMS device also includes a packaging layer, and at least a portion of the packaging layer is disposed in the opening and the recess structure. The second dielectric layer, the structure layer, and the packaging layer define a chamber.

A package structure and its manufacturing method are provided. The package structure includes a substrate with a recess, and a first MEMS chip, a first intermediate chip, a second MEMS chip and a first capping plate sequentially formed on the substrate. The lower surface of the first MEMS chip has a first sensor or a microactuator. The upper surface of the second MEMS chip has a second sensor or a microactuator. The first intermediate chip has a through-substrate via, and includes a signal conversion unit, a logic operation unit, a control unit, or a combination thereof. The package structure includes at least one of the first sensor and the second sensor.

A monolithically integrated multi-sensor (MIMS) is disclosed. A MIMs integrated circuit comprises a plurality of sensors. For example, the integrated circuit can comprise three or more sensors where each sensor measures a different parameter. The three or more sensors can share one or more layers to form each sensor structure. In one embodiment, the three or more sensors can comprise MEMs sensor structures. Examples of the sensors that can be formed on a MIMs integrated circuit are an inertial sensor, a pressure sensor, a tactile sensor, a humidity sensor, a temperature sensor, a microphone, a force sensor, a load sensor, a magnetic sensor, a flow sensor, a light sensor, an electric field sensor, an electrical impedance sensor, a galvanic skin response sensor, a chemical sensor, a gas sensor, a liquid sensor, a solids sensor, and a biological sensor.

A microelectromechanical (MEMS) system may comprise multiple sensors within cavities of the MEMS system. The operation of different sensors requires different pressures within the respective cavities. A first cavity may be sealed at a first pressure. A through-hole may be etched into a cap layer of the MEMS system to introduce gas into a second cavity such that the cavity has a desired pressure. The cavity may then be sealed by a MEMS valve to maintain the desired pressure in the second cavity.

Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both tungsten material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.

A NEMS device structure and a method for forming the same are provided. The NEMS device structure includes a first dielectric layer formed over a substrate, and a first conductive layer formed in the first dielectric layer. The NEMS device structure includes a second dielectric layer formed over the first dielectric layer, and a first supporting electrode a second supporting electrode and a beam structure formed in the second dielectric layer. The beam structure is formed between the first supporting electrode and the second supporting electrode, and the beam structure has a T-shaped structure. The NEMS device structure includes a first through hole formed between the first supporting electrode and the beam structure, and a second through hole formed between the second supporting electrode and the beam structure.

A microphone including a casing having a front wall, a back wall, and a side wall joining the front wall to the back wall, a transducer mounted to the front wall, the transducer including a substrate and a transducing element, the transducing element having a transducer acoustic compliance dependent on the transducing element dimensions, a back cavity cooperatively defined between the back wall, the side wall, and the transducer, the back cavity having a back cavity acoustic compliance. The transducing element is dimensioned such that the transducing element length matches a predetermined resonant frequency and the transducing element width, thickness, and elasticity produces a transducer acoustic compliance within a given range of the back cavity acoustic compliance.

There is provided a micro-electromechanical system (MEMS) device (102, 200, 300, 404) for cancelling noise generated by oscillation of a movable micro-electromechanical system (MEMS) element (104, 204, 304, 406). The micro-electromechanical system (MEMS) device (102, 200, 300, 404) includes the movable micro-electromechanical system (MEMS) element (104, 204, 304, 406), an actuator (106, 208, 306, 408), a controller (108, 410) and a movable noise cancelling element (110, 202, 312, 412). The controller (108, 410) provides electrical signals to drive the actuator (106, 208, 306, 408) and the movable noise cancelling element (110, 202, 312, 412) in a way to cancel the noise generated in the micro-electromechanical system (MEMS) device (102, 200, 300, 404) by oscillation of the movable MEMS element (104, 204, 304, 406). The movable noise-cancelling element (110, 202, 312, 412) produces anti-phase noise based on the electrical signals received from the controller (108, 410) to cancel noise caused by oscillation of the movable MEMS element (104, 204, 304, 406) based on the control signals received from the controller (108, 410).

Various embodiments of the present disclosure are directed towards an electronic device that comprises a semiconductor substrate having a first surface opposite a second surface. The semiconductor substrate at least partially defines a cavity. A first microelectromechanical systems (MEMS) device is disposed along the first surface of the semiconductor substrate. The first MEMS device comprises a first backplate and a diaphragm vertically separated from the first backplate. A second MEMS device is disposed along the first surface of the semiconductor substrate. The second MEMS device comprises spring structures and a moveable element. The spring structures are configured to suspend the moveable element in the cavity. A segment of the semiconductor substrate continuously laterally extends from under a sidewall of the first MEMS device to under a sidewall of the second MEMS device.