A nanosheet MEMS sensor device and method are described for integrating the fabrication of nanosheet transistors (61) and MEMS sensors (62) in a single nanosheet process flow by forming separate nanosheet transistor and MEMS sensor stacks (12A-16A, 12B-16B) of alternating Si and SiGe layers which are selectively processed to form gate electrodes (49A-C) which replace the silicon germanium layers in the nanosheet transistor stack, to form silicon fixed electrodes using silicon layers (13B-2, 15B-2) on a first side of the MEMS sensor stack, and to form silicon cantilever electrodes using silicon layers (13B-1, 15B-1) on a second side of the MEMS sensor stack by forming a narrow trench opening (54) in the MEMS sensor stack to expose and remove remnant silicon germanium layers on the second side in the MEMS sensor stack.

A method for treating a micro electro-mechanical system (MEMS) component is disclosed. In one example, the method includes the steps of providing a first wafer, treating the first wafer to form cavities and at least an oxide layer on a top surface of the first wafer using a first chemical vapor deposition (CVD) process, providing a second wafer, bonding the second wafer on a top surface of the at least one oxide layer, treating the second wafer to form a first plurality of structures, depositing a layer of Self-Assembling Monolayer (SAM) to a surface of the MEMS component using a second CVD process.

An apparatus includes a lens material forming a lens. The apparatus also includes a piezoelectric capacitor over the lens material, where the piezoelectric capacitor is configured to change a shape of the lens material in response to a voltage across the piezoelectric capacitor to thereby change a focus of the lens. The apparatus further includes at least one stress compensation ring over a portion of the lens material and over at least a portion of the piezoelectric capacitor. The at least one stress compensation ring is configured to at least partially reduce bending of the lens material caused by stress on or in the lens material.

A transfer system for transferring multiple microelements to a receiving substrate includes a main pick-up device, a testing device, and first and second carrier plates. The testing device includes a testing platform, a testing circuit, and multiple testing electrodes electrically connected to the testing circuit. The main pick-up device is operable to releasably pick up the microelements from the first carrier plate and position the microelements on the testing electrodes. The testing device is operable to test the microelements to distinguish unqualified ones of the microelements from qualified ones. The main pick-up device is operable to release the qualified ones of the microelements to the receiving substrate.

Embodiments of the disclosure provide a micromachined mirror assembly having a mirror-base layer, a first reflective layer on a top surface of the mirror-base layer, and a second reflective layer on a bottom surface of the mirror-base layer. In an example, the first reflective layer is reflective to incident light of the micromachined mirror assembly, and the first reflective layer and the second reflective layer are made of a same material and have same dimensions.

This application discloses an artificial retinal nerve flexible microelectrode device and a fabrication method thereof. The device includes a flexible transparent substrate and a transparent thin film transistor (TFT) array layer. The transparent TFT array layer is disposed on the flexible transparent substrate and used for connecting with an optic nerve in a human eye to transmit a visual electrical signal to the optic nerve.

In various embodiments, a method of processing a monocrystalline substrate is provided. The method may include severing the substrate along a main processing side into at least two monocrystalline substrate segments, and forming a micromechanical structure comprising at least one monocrystalline substrate segment of the at least two substrate segments.

A substrate formed by using a sliding dielectric film with a low surface energy that activates surface migration of metal adatoms and a method of manufacturing the same. More particularly, a substrate with a sliding dielectric film includes a substrate; a sliding dielectric film with a low surface energy formed on the substrate; and a nanoparticle formed on the sliding dielectric film, wherein the surface energy of the nanoparticle is at least 1000 mJ/m.sup.2 greater than the surface energy of the sliding dielectric film. The substrate has a very high SERS enhancement factor with low light loss characteristics in the entire visible region by maximizing the plasmonic coupling between highly-dense and spaced-apart nanoparticles and between the lower substrate and the upper nanoparticles.

In some embodiments, the present disclosure relates to a piezomicroelectromechanical system (piezoMEMS) device that includes a second piezoelectric layer arranged over the first electrode layer. A second electrode layer is arranged over the second piezoelectric layer. A first contact is arranged over and extends through the second electrode layer and the second piezoelectric layer to contact the first electrode layer. A dielectric liner layer is arranged directly between the first contact and inner sidewalls of the second electrode layer and the second piezoelectric layer. A second contact is arranged over and electrically coupled to the second electrode layer, wherein the second contact is electrically isolated from the first contact.

In some embodiments, the present disclosure relates to a method for forming a microelectromechanical system (MEMS) device, including depositing a first electrode layer over a first piezoelectric layer. A hard mask layer is then deposited over the first electrode layer. A photoresist mask is formed on the hard mask layer with a first-electrode pattern. Using the photoresist mask, a first etch is performed into the hard mask layer to transfer the first-electrode pattern to the hard mask layer. The photoresist mask is then removed. A second etch is performed using the hard mask layer to transfer the first-electrode pattern to the first electrode layer, and the hard mask layer is removed.