A microfluidic sensor comprising: a first substrate; a second substrate; a cavity formed between the first substrate and the second substrate, the cavity comprising a reservoir portion and a channel portion extending from the reservoir portion; a capacitive element disposed between the first substrate and the second substrate, the capacitive element being at least partially disposed in the channel portion of the cavity; and a dielectric sensing liquid provided in the reservoir portion. Upon application of a force to the first substrate adjacent the reservoir portion, the reservoir portion is configured to deform and displace the sensing liquid along the channel portion, so as to change the capacitance of the capacitive element within the channel portion.

A microelectromechanical element is provided with patterned regions of wafer material and glass material. The regions of glass material include at least a first glass region and a second glass region formed of a first glass material and a second glass material, respectively. The first glass material enables anodic bonding with the wafer material. An alkali metal content of the second glass material is less than an alkali metal content of the first glass material.

Some polymeric devices, as described herein, can be made of a first layer and a second layer bonded together with one or more microfluidic channels defined internal to the device. The first layer and the second layer may each include a substrate and a polymer bonded to the substrate. The two layers may be bonded through a polymer network that interpenetrates the polymers in the first and second layers. This disclosure also describes methods of bonding together polymeric articles. The methods include diffusing polymerizable monomers and radical forming initiators into the surfaces of one or both of the polymers, putting the surfaces into contact, and initiating polymerization to create a polymer network that interpenetrates the polymers.

A microelectromechanical device having a first substrate of semiconductor material and a second substrate of semiconductor material having a bonding recess delimited by projecting portions, monolithic therewith. The bonding recess forms a closed cavity with the first substrate. A bonding structure is arranged within the closed cavity and is bonded to the first and second substrates. A microelectromechanical structure is formed in a substrate chosen between the first and second substrates. The device is manufactured by forming the bonding recess in a first wafer; depositing a bonding mass in the bonding recess, the bonding mass having a greater depth than the bonding recess; and bonding the two wafers.

A method for bonding wafers eutectically, including the steps: (a) providing a first wafer having a first bonding layer and a second wafer having a second bonding layer and a spacer; (b) bringing the first wafer in juxtaposition with the second wafer, the spacer resting against the first bonding layer; (c) pressing the first wafer and the second wafer together, until the first bonding layer and the second bonding layer abut, the spacer penetrating the first bonding layer; (d) bonding the first wafer to the second wafer eutectically, by forming a eutectic alloy of at least parts of the first bonding layer and the second bonding layer. Also described is a eutectically bonded wafer composite and a micromechanical device having such a eutectically bonded wafer composite.

A substrate assembly and a method of bonding substrates are disclosed. The method includes steps of: providing two substrate; subjecting a connecting surface of each of the substrates to surface-modifying treatment to form surface-modified region respectively on each of the connecting surfaces; contacting the substrates in such a manner that the substrates are connected with each other through a physical interaction between the surface-modified regions; and laser irradiating and melting a portion of each of the connecting surfaces to form a respective bonding region, and solidifying the melted bonding regions of the substrates to bond the substrates together.

A micro-electro-mechanical sensor comprises a first substrate comprising an element movable with respect to the first substrate and a second substrate comprising a first contact pad and a second contact pad. The first substrate is bonded to the second substrate such that a movement of the element changes a coupling between the first contact pad and the second contact pad.

A method includes fusion bonding a first side of a MEMS wafer to a second side of a first handle wafer. A TSV is formed from a first side of the first handle wafer to the second side of the first handle wafer and into the first MEMS wafer. A dielectric layer is formed on the first side of the first handle wafer. A tungsten via is formed in the dielectric layer. Electrodes are formed on the dielectric layer. A second MEMS wafer is eutecticly bonded with a first eutectic bond to the electrodes, wherein the TSV electrically connects the first MEMS wafer to the second MEMS wafer. Standoffs are formed on a second side of the first MEMS wafer. A CMOS wafer is eutecticly bonded with a second eutectic bond to the standoffs, wherein the second eutectic bond includes different materials than the first eutectic bond.

A hybrid ultrasonic transducer and a method of manufacturing the same are provided. A method of manufacturing a semiconductor device includes the forming of a first substrate and a second substrate. The forming of the first substrate includes: depositing a membrane stack over a first dielectric layer; forming a third electrode over the first dielectric layer; and depositing a second dielectric layer over the membrane stack and the third electrode. The forming of the second substrate includes: forming a redistribution layer (RDL) having a fourth electrode; and etching a first cavity on a surface of the RDL adjacent to the fourth electrode. The method further includes: forming a second cavity in one of the first substrate and the second substrate; and bonding the first substrate to the second substrate.

A hybrid ultrasonic transducer and a method of manufacturing the same are provided. A method of manufacturing a semiconductor device includes the forming of a first substrate and a second substrate. The forming of the first substrate includes: depositing a membrane stack over a first dielectric layer; forming a third electrode over the first dielectric layer; and depositing a second dielectric layer over the membrane stack and the third electrode. The forming of the second substrate includes: forming a redistribution layer (RDL) having a fourth electrode; and etching a first cavity on a surface of the RDL adjacent to the fourth electrode. The method further includes: forming a second cavity in one of the first substrate and the second substrate; and bonding the first substrate to the second substrate.