A method of processing a double sided wafer of a microelectromechanical device includes spinning a resist onto a first side of a first wafer. The method further includes forming pathways within the resist to expose portions of the first side of the first wafer. The method also includes etching one or more depressions in the first side of the first wafer through the pathways, where each of the depressions have a planar surface and edges. Furthermore, the method includes depositing one or more adhesion metals over the resist such that the one or more adhesion metals are deposited within the depressions, and then removing the resist from the first wafer. The method finally includes depositing indium onto the adhesion metals deposited within the depressions and bonding a second wafer to the first wafer by compressing the indium between the second wafer and the first wafer.

A microelectromechanical device having a first substrate of semiconductor material and a second substrate of semiconductor material having a bonding recess delimited by projecting portions, monolithic therewith. The bonding recess forms a closed cavity with the first substrate. A bonding structure is arranged within the closed cavity and is bonded to the first and second substrates. A microelectromechanical structure is formed in a substrate chosen between the first and second substrates. The device is manufactured by forming the bonding recess in a first wafer; depositing a bonding mass in the bonding recess, the bonding mass having a greater depth than the bonding recess; and bonding the two wafers.

A microelectromechanical systems (MEMS) package assembly and a method of manufacturing the same is provided. The MEMS package assembly includes a substrate, a housing coupled to the substrate to form a cavity, wherein the housing includes a transparent plate disposed above and parallel to the substrate and is configured to permit a transmission of light therethrough, and a MEMS chip disposed within the cavity and including a first main surface proximal to the transparent plate and a second main surface opposite to the first main surface and coupled to the substrate. The MEMS chip is oriented such that the first main surface is tilted at a tilt angle with respect to the transparent plate.

The present disclosure relates to a microelectromechanical systems (MEMS) package featuring a flat plate having a raised edge around its perimeter serving as an anti-stiction device, and an associated method of formation. A CMOS IC is provided having a dielectric structure surrounding a plurality of conductive interconnect layers disposed over a CMOS substrate. A MEMS IC is bonded to the dielectric structure such that it forms a cavity with a lowered central portion the dielectric structure, and the MEMS IC includes a movable mass that is arranged within the cavity. The CMOS IC includes an anti-stiction plate disposed under the movable mass. The anti-stiction plate is made of a conductive material and has a raised edge surrounding at least a part of a perimeter of a substantially planar upper surface.

A mirror drive device includes a support part, a movable part, a permanent magnet forming a magnetic field in the periphery of the movable part, and a circuit board disposed between the support part and the permanent magnet in a facing direction of a pair of principal surfaces of the movable part so as to cause the movable part to be positioned at an inside of the circuit board when viewed in the facing direction. The movable part includes a mirror disposition portion, a mirror disposed and a drive coil so as to face the permanent magnet. The support part includes a base portion connected to a connection member and a reinforcing portion extending from the base portion toward a side away from the permanent magnet and the circuit board. The drive coil is connected to electrodes by lead-out conductors.

The invention is about an ultrasonic welding-based microfluidic device. It is mainly made of a first element and a second element welded one to the other via at least one structure (10, 10). The structure (10, 10) comprises an elongated welded portion for said welding, a welding channel (12, 12) extending between the first and second elements and along one side of the welded portion, and a draining channel (13) communicating with the welding channel (12, 12) and the microfluidic path (20, 20) of the device. The invention is further about a method of manufacturing such a device.

Devices and techniques include process steps for forming openings through stacked and bonded structures. The openings are formed by pre-etching through one or more layers of prepared dies after planarization of the bonding layer (by chemical-mechanical polishing (CMP) or the like) and prior to bonding. For instance, the openings are etched through one or more layers of dies to be bonded prior to bonding the dies to form an assembly.

A method of attaching a MEMS die to a mounting surface includes coating an inside surface of a pressure port of a fluid inlet member with a layer of solder mask, the fluid inlet member having a first axial end, a second axial end, and a port opening of the pressure port formed in the second axial end of the fluid inlet member. A solder preform is disposed on the mounting surface of the fluid inlet member and a MEMS die is disposed on the solder preform. The solder preform is heated in a re-flow operation to attach the MEMS die to the mounting surface, wherein the solder mask within the pressure port prevents molten solder from entering the pressure port during the re-flow operation.

Microscale fluidic devices and components thereof having a fluid retention groove, as well as systems and methods related thereto. The fluid retention groove facilitates uniform bonding of microfluidic device components.

A 2-in-1 power electronics assembly includes a frame with a lower dielectric layer, an upper dielectric layer spaced apart from the lower dielectric layer, and a sidewall disposed between and coupled to the lower dielectric layer and the upper dielectric layer. The lower dielectric layer includes a lower cooling fluid inlet and the upper dielectric layer includes an upper cooling fluid outlet. A first semiconductor device assembly and a second semiconductor device assembly are included and disposed within the frame. The first semiconductor device is disposed between a first lower metal inverse opal (MIO) layer and a first upper MIO layer, and the second semiconductor device is disposed between a second lower MIO layer and a second upper MIO layer. An internal cooling structure that includes the MIO layers provides double sided cooling for the first semiconductor device and the second semiconductor device.