The present invention relates to a process and apparatus for the preparation of a bonded substrate. More particularly, the present invention relates to a PDMS bonding apparatus. More specifically, the present invention relates to a PDMS bonding apparatus which uses plasma to bond PDMS to a substrate.

The present invention discloses a PDMS bonding apparatus and process for using said apparatus, the apparatus comprising: a process chamber (100) forming a sealed processing space (S) for bonding of PDMS (polydimethylsiloxane); a first support (200) installed in the process chamber (100) and which supports the PDMS (1); a second support (300) installed in the process chamber (100) opposing the first support (200) and which supports a bonding object (2) which is bonded to the PDMS (1); a gas injection unit (400) which ejects process gas between the first support (200) and the second support (300), and; a plasma generator (500) which creates a plasma atmosphere within the process chamber (100).

A described example includes: a MEMS component on a device side surface of a first semiconductor substrate; a second semiconductor substrate bonded to the device side surface of the first semiconductor substrate by a first seal patterned to form sidewalls that surround the MEMS component; a third semiconductor substrate having a second seal extending from a surface and bonded to the backside surface of the first semiconductor substrate by the second seal, the second seal forming sidewalls of a gap beneath the MEMS component. A trench extends through the first semiconductor substrate and at least partially surrounds the MEMS component. The third semiconductor substrate is mounted on a package substrate. A bond wire or ribbon bond couples the bond pad to a conductive lead on the package substrate; and mold compound covers the MEMS component, the bond wire, and a portion of the package substrate.

A method of bonding layers of dielectric materials includes providing a surface one of the layers with microscale- and/or nanoscale-size bonding elements forming contact points of the layers and bringing a layer of the layers into a mutual position according to an intended use. The method also includes illuminating the layer whose surface is provided with bonding elements by an incident electromagnetic wave, the propagation direction of which is substantially orthogonal to the one of the layers, and whose wavelength is selected depending on an absorption spectrum of a material forming the one of the layers and generating condensed optical beams within said bonding elements or close to a tip of said bonding elements intended to be in contact with the other layer. The method further includes heating and melting the bonding elements by high-intensity focal spots formed by said generated optical beams and maintaining the layers into a mutual position until and bonding of the layers.

A micro vibration body includes a curved surface portion, which has an annular curved surface, and a recessed portion, which is recessed from the curved surface portion. A mounting substrate includes an inner frame portion and electrode portions, which surround an inner frame portion. A joining member is provided in an inner region of the mounting substrate surrounded by the inner frame portion. The recessed portion of the micro vibration body has a bottom surface defining a mounted surface located in the inner region and joined to the mounting substrate via the joining member. The curved surface portion has a rim that includes an end portion of the curved surface portion on an opposite side to the recessed portion. The rim has a rim lower surface located on a same plane as the mounted surface or a tip end portion of the mounted surface.

A microelectromechanical device having a first substrate of semiconductor material and a second substrate of semiconductor material having a bonding recess delimited by projecting portions, monolithic therewith. The bonding recess forms a closed cavity with the first substrate. A bonding structure is arranged within the closed cavity and is bonded to the first and second substrates. A microelectromechanical structure is formed in a substrate chosen between the first and second substrates. The device is manufactured by forming the bonding recess in a first wafer; depositing a bonding mass in the bonding recess, the bonding mass having a greater depth than the bonding recess; and bonding the two wafers.

Provided is a semiconductor device formed by performing bonding at room temperature with respect to a wafer in which bonded electrodes and insulating layers and are respectively exposed to front surfaces, including a bonding interlayer which independently exhibits non-conductivity and exhibits conductivity by being bonded to the bonded electrodes, between the front surfaces.

A bonded structure is disclosed. The bonded structure can include a first element that has a first bonding surface. The bonded structure can further include a second element that has a second bonding surface. The first and second bonding surfaces are bonded to one another along a bonding interface. The bonded structure can also include an integrated device that is coupled to or formed with the first element or the second element. The bonded structure can further include a channel that is disposed along the bonding interface around the integrated device to define an effectively closed profile The bonded structure can also include a getter material that is disposed in the channel. The getter material is configured to reduce the diffusion of gas into an interior region of the bonded structure.

A package structure includes a device chip, a MEMS die, a cap structure, and an eutectic bonding layer. The MEMS die is over the device chip and includes a substrate having a plurality of cavities and a conductive layer covering a bottom surface and sidewalls of each of the cavities. The cap structure is coupled to the MEMS die, and the cap structure includes a base substrate having at least one seal ring located in the cavities and a bonding layer covering a first surface and at least part of sidewalls of the seal ring. The first surface of the seal ring faces the MEMS die. The eutectic bonding layer is located between the conductive layer and the bonding layer in the cavities. In addition, a method of manufacturing the package structure is provided.

The present disclosure relates to a microelectromechanical systems (MEMS) package featuring a flat plate having a raised edge around its perimeter serving as an anti-stiction device, and an associated method of formation. A CMOS IC is provided having a dielectric structure surrounding a plurality of conductive interconnect layers disposed over a CMOS substrate. A MEMS IC is bonded to the dielectric structure such that it forms a cavity with a lowered central portion the dielectric structure, and the MEMS IC includes a movable mass that is arranged within the cavity. The CMOS IC includes an anti-stiction plate disposed under the movable mass. The anti-stiction plate is made of a conductive material and has a raised edge surrounding at least a part of a perimeter of a substantially planar upper surface.

Provided is a workpiece bonding method that makes it possible to achieve a joining state with a high strength and to obtain a good repeatability of the joining state.

A workpiece bonding method according to the present invention is a workpiece bonding method for bonding two workpieces to each other, each of the two workpieces being composed of a material selected from the group consisting of synthetic resin, glass, silicon wafer, crystal and sapphire, the workpiece bonding method including: a surface activation step of activating a bonded surface of at least one of the workpieces; and a laminating step of laminating the two workpieces such that respective bonded surfaces contact with each other, and a pretreatment step of removing moisture from the bonded surface of the workpiece that is to be subjected to the surface activation step is performed before the surface activation step is performed.