A 2-in-1 power electronics assembly includes a frame with a lower dielectric layer, an upper dielectric layer spaced apart from the lower dielectric layer, and a sidewall disposed between and coupled to the lower dielectric layer and the upper dielectric layer. The lower dielectric layer includes a lower cooling fluid inlet and the upper dielectric layer includes an upper cooling fluid outlet. A first semiconductor device assembly and a second semiconductor device assembly are included and disposed within the frame. The first semiconductor device is disposed between a first lower metal inverse opal (MIO) layer and a first upper MIO layer, and the second semiconductor device is disposed between a second lower MIO layer and a second upper MIO layer. An internal cooling structure that includes the MIO layers provides double sided cooling for the first semiconductor device and the second semiconductor device.

A method for applying a bonding layer that is comprised of a basic layer and a protective layer on a substrate with the following method steps: application of an oxidizable basic material as a basic layer on a bonding side of the substrate, at least partial covering of the basic layer with a protective material that is at least partially dissolvable in the basic material as a protective layer. In addition, the invention relates to a corresponding substrate.

A capacitive micromachined ultrasonic transducer (CMUT) and methods of forming the same are disclosed herein. In one implementation, the CMUT comprises a glass substrate having a cavity; a patterned metal bottom electrode situated within the cavity of the glass substrate; and a vibrating plate comprising at least a conducting layer, wherein the vibrating plate is anodically bonded to the glass substrate to form an air-tight seal between the vibrating plate and the substrate and wherein a pressure inside the cavity is less than atmospheric pressure (i.e., a vacuum). In another implementation, the CMUT comprises a glass substrate with Through-Glass-Via (TGV) interconnects, wherein a metal electrode is electrically connected to a TGV and wherein said metal electrode can be in the bottom of a cavity of the glass substrate or on the vibrating plate.

The present disclosure relates to an electronic device. The electronic device comprises a substrate, a micro-electromechanical systems (MEMS) device and an attachment element. The substrate defines an opening penetrating the substrate. The MEMS device has an active surface facing away from the substrate and a sensing region facing toward the opening. The attachment element is disposed on the substrate and surrounding the opening and the sensing region of the MEMS device.

The invention is about an ultrasonic welding-based microfluidic device. It is mainly made of a first element and a second element welded one to the other via at least one structure (10, 10). The structure (10, 10) comprises an elongated welded portion for said welding, a welding channel (12, 12) extending between the first and second elements and along one side of the welded portion, and a draining channel (13) communicating with the welding channel (12, 12) and the microfluidic path (20, 20) of the device. The invention is further about a method of manufacturing such a device.

A bonding between a first substrate and a second substrate, the method includes the steps of: a) providing the first substrate and the second substrate, b) forming a first bonding layer having tungsten oxide on the first substrate and a second bonding layer having tungsten oxide on the second substrate, at least one of the first bonding layer and of the second bonding layer including a third element M so as to form an MWxOy-type alloy, the atomic content of M in the composition of the alloy being between 0.5 and 20% and preferably between 1 and 10%, c) carrying out a direct bonding between the first bonding layer and the second bonding layer, and d) performing a heat treatment at a temperature greater than 250 C.

A method for fabricating a symmetrical MEMS accelerometer. For each half, etch multiple holes on the bottom of an SOI wafer; form multiple hollowed parts on the top of a silicon wafer; form silicon dioxide on the top and bottom of the silicon wafer; bond the top of the silicon wafer with the bottom of the SOI wafer; deposit silicon nitride on the bottom of the silicon wafer, remove parts of the silicon nitride and silicon dioxide to expose the bottom of the silicon wafer; etch the exposed bottom of the silicon wafer; reduce the thickness of the SOI wafer; remove the silicon nitride and exposed bottom. Bond the two halves along their bottom surface to form the accelerometer. Form a bottom cap including electrodes. Bond the bottom cap and the accelerometer. Deposit metal on top of the silicon wafer.

Systems and methods are provided for enhanced vacuum bags. One embodiment is a method that includes placing a laminate comprising uncured fiber reinforced polymer onto a mandrel, laying up a vacuum bag, which includes integral ultrasonic transducers within a gas-impermeable layer, atop the laminate, and sealing the vacuum bag to the mandrel. The method also includes drawing a vacuum on the laminate via the vacuum bag, removing gas between the integral ultrasonic transducers and the laminate, and interrogating the laminate with the integral ultrasonic transducers.

A micro electro mechanical system (MEMS) includes a circuit substrate, a first MEMS structure disposed over the circuit substrate, and a second MEMS structure disposed over the first MEMS structure.

A bonded structure is disclosed. The bonded structure can include a first element that has a first bonding surface. The bonded structure can further include a second element that has a second bonding surface. The first and second bonding surfaces are bonded to one another along a bonding interface. The bonded structure can also include an integrated device that is coupled to or formed with the first element or the second element. The bonded structure can further include a channel that is disposed along the bonding interface around the integrated device to define an effectively closed profile The bonded structure can also include a getter material that is disposed in the channel. The getter material is configured to reduce the diffusion of gas into an interior region of the bonded structure.