A method for characterizing structures etched in a substrate, such as a wafer is disclosed. The method includes the following steps: illuminating the bottom of at least one structure with an illumination beam issued from a light source emitting light with a wavelength adapted to be transmitted through the substrate, acquiring, with an imaging device positioned on the bottom side of said substrate, at least one image of a bottom of the at least one structure through the substrate, and measuring at least one data, called lateral data, relating to a lateral dimension of the bottom of the at least one HAR structure from the at least one acquired image. A system implementing such a method is also disclosed.

A sensor system includes first and second MEMS structures and a processing circuit. The first and second MEMS structures are configured to produce first and second output signals, respectively, in response to a physical stimulus. A method performed by the processing circuit entails receiving the first and second output signals and detecting a defective one of the first and second MEMS structures from the first and second output signals by determining that the first and second output signals are uncorrelated to one another. The method further entails utilizing only the first or the second output signal from a non-defective one of the MEMS structures to produce a processed output signal when one of the MEMS structures is determined to be defective and utilizing the first and second output signals from both of the MEMS structures to produce the processed output signal when neither of the MEMS structures is defective.

Aspects are directed to a MEMS device configurable to receive signals from a first, a second, a third, and a fourth signal source operating at a first, a second, a third, and a fourth frequency, respectively. The MEMS device may be configured to combine the first signal with the second signal generating a first combined signal, and to combine the third signal with the fourth signal generating a second combined signal. The first combined signal may be coupled to the first terminal of the MEMS device while the second combined signal may be coupled to the second terminal of the MEMS device. The first common terminal may be configured to produce an output associated with the second and fourth frequencies. The MEMS device may be further configured to derive from the produced output a signal indicative of nonlinearities or of changes in capacitance related to the MEMS device.

Microelectromechanical sensor comprising a fixed part and a mobile part suspended from the fixed part such that the mobile part can move at least in an out-of-plane displacement direction, the fixed part comprising at least first electrodes extending parallel to the displacement direction of the mobile part, the mobile part comprising a seismic mass and at least second electrodes extending parallel to the out-of-plane displacement direction, the first electrodes and the second electrodes being located relative to each other so as to be interdigitated, in which the second electrodes are directly connected to the inertial mass and only part of the face of each mobile electrode is facing an electrode fixed at rest.

A sensor system includes first and second MEMS structures and a processing circuit. The first and second MEMS structures are configured to produce first and second output signals, respectively, in response to a physical stimulus. A method performed by the processing circuit entails receiving the first and second output signals and detecting a defective one of the first and second MEMS structures from the first and second output signals by determining that the first and second output signals are uncorrelated to one another. The method further entails utilizing only the first or the second output signal from a non-defective one of the MEMS structures to produce a processed output signal when one of the MEMS structures is determined to be defective and utilizing the first and second output signals from both of the MEMS structures to produce the processed output signal when neither of the MEMS structures is defective.

The disclosure provides a system, comprising: a MEMS capacitive transducer, comprising one or more first capacitive plates coupled to a first node and one or more second capacitive plates coupled to a second node; biasing circuitry coupled to the first node, operable to provide a biasing voltage to the one or more first capacitive plates; and test circuitry coupled to the second node, operable to: selectively apply one or more current sources to the second node, so as to charge and discharge the MEMS capacitive transducer and so vary a signal based on a voltage at said second node between an upper value and a lower value; determine a parameter that is indicative of a time period of the variation of the signal; and determine a capacitance of the MEMS capacitive transducer based on the parameter that is indicative of the time period.

An integrated sensor device including a first die, housing a sensor element to detect a quantity external to the sensor device and transduce the external quantity into an electrical sensing signal; a second die mechanically coupled to the first die so that the first and second dies are stacked on one another along one and the same axis; and at least one heater of a resistive type integrated in the first die and/or in the second die, having a first conduction terminal and a second conduction terminal configured to couple respective first and second conduction terminals of a signal generator for causing an electric current to flow, in use, between the first and second conduction terminals of the heater and generate heat by the Joule effect. It is possible to carry out calibration in temperature of the sensor element.

A microelectromechanical system (MEMS) sensor includes a MEMS layer that includes fixed and movable electrodes. In response to an in-plane linear acceleration, the movable electrodes move with respect to the fixed electrodes, and acceleration is determined based on the resulting change in capacitance. A plurality of auxiliary electrodes are located on a substrate of the MEMS sensor and below the MEMS layer, such that a capacitance between the MEMS layer and the auxiliary loads changes in response to an out-of-plane movement of the MEMS layer or a portion thereof. The MEMS sensor compensates for the acceleration value based on the capacitance sensed by the auxiliary electrodes.

A micromechanical component for a capacitive pressure sensor device includes a substrate; a frame structure that frames a partial surface; a membrane that is tensioned by the frame structure such that a self-supporting region of the membrane extends over the framed partial surface and an internal volume with a reference pressure therein is sealed in an airtight fashion, the self-supporting region of the membrane being deformable by a physical pressure on an external side of the self-supporting region that not equal to the reference pressure; a measurement electrode situated on the framed partial surface; and a reference measurement electrode that is situated on the framed partial surface and is electrically insulated from the measurement electrode.

Electronic test probes formed in a batch have a plurality of multi-material layers wherein at least one of the materials is a sacrificial material and at least one other material is a structural material. Successfully formed or good test probes are separated from unsuccessfully formed or bad test probes