A method for providing a semiconductor layer arrangement on a substrate which comprises providing a semiconductor layer arrangement having a functional layer and a semiconductor substrate layer, attaching the semiconductor layer arrangement to a glass substrate layer such that the functional layer is arranged between the glass substrate layer and the semiconductor substrate layer, and removing the semiconductor substrate layer at least partially such that the glass substrate layer substitutes the semiconductor substrate layer as the substrate of the semiconductor layer arrangement.

An ultrasonic transducer device includes a patterned film stack disposed on first regions of a substrate, the patterned film stack including a metal electrode layer and a bottom cavity layer formed on the metal electrode layer. The ultrasonic transducer device further includes a planarized insulation layer disposed on second regions of the substrate layer, a cavity formed in a membrane support layer and a CMP stop layer, the CMP stop layer including a top layer of the patterned film stack and the membrane support layer formed over the patterned film stack and the planarized insulation layer. The ultrasonic transducer device also includes a membrane bonded to the membrane support layer. The CMP stop layer underlies portions of the membrane support layer but not the cavity.

There is provided a micro-electromechanical system (MEMS) device (102, 200, 300, 404) for cancelling noise generated by oscillation of a movable micro-electromechanical system (MEMS) element (104, 204, 304, 406). The micro-electromechanical system (MEMS) device (102, 200, 300, 404) includes the movable micro-electromechanical system (MEMS) element (104, 204, 304, 406), an actuator (106, 208, 306, 408), a controller (108, 410) and a movable noise cancelling element (110, 202, 312, 412). The controller (108, 410) provides electrical signals to drive the actuator (106, 208, 306, 408) and the movable noise cancelling element (110, 202, 312, 412) in a way to cancel the noise generated in the micro-electromechanical system (MEMS) device (102, 200, 300, 404) by oscillation of the movable MEMS element (104, 204, 304, 406). The movable noise-cancelling element (110, 202, 312, 412) produces anti-phase noise based on the electrical signals received from the controller (108, 410) to cancel noise caused by oscillation of the movable MEMS element (104, 204, 304, 406) based on the control signals received from the controller (108, 410).

A method may include etching a number of holes into a carrier wafer layer to form a plurality of filters in the carrier wafer layer, patterning a chamber layer over a first side of the carrier wafer layer to form chambers above each filter formed in the carrier wafer layer, forming a layer over the chamber layer, grinding a second side of the carrier wafer layer to expose the number of holes etched into the carrier wafer layer, and bonding a molded substrate to the carrier wafer layer opposite the chamber layer.

A novel microfluidic chip is proposed for performing a chemical or biochemical test in a metered reaction volume. The microfluidic chip has a body which defines an inner flow volume. An inlet has been provided to the body for connecting the inner flow volume to the ambient space. A waste channel forms part of the inner flow volume and is in fluid communication with the inlet. A sample channel also forms part of the inner flow volume and is in fluid communication with the inlet. The sample channel includes a first hydrophobic stop and a second hydrophobic stop at a distance from the first hydrophobic stop so as to provide a metered reaction volume there between. An expelling channel is in fluid communication with the metered reaction volume of the sample channel through the first hydrophobic stop. A sample reservoir is in fluid communication with the metered reaction volume of the sample channel through the second hydrophobic stop.

A MEMS device and a MEMS device manufacturing method are provided for suppressing damage to device parts. An exemplary method of manufacturing a resonance device includes radiating laser light from a bottom surface side of a second substrate to form modified regions inside the second substrate along dividing lines of a first substrate, which has device parts formed on a top surface thereof, and the second substrate, the top surface of which is bonded to the bottom surface of the first substrate via bonding portions. The method further includes dividing the first and second substrates along the dividing lines by applying stress to the modified regions. The bonding portions are formed along the dividing lines and block the laser light.

A recess is formed in one silicon substrate. A silicon oxide film is formed in another one silicon substrate at a portion space apart from a space-to-be-formed region. The silicon oxide film has a groove surrounding the space-to-be-formed region and extending to an outer periphery of the other one silicon substrate. Further, the other one silicon substrate and the one silicon substrate are directly bonded to each other via the silicon oxide film so as to cover the groove. A gas discharge passage, a stacking structure of the silicon substrates and the silicon oxide film are formed, and the space is formed inside the stacking structure by the recess. Then, by the heat treatment, the gas inside the space is discharged to the outside of the stacking structure through the gas discharge passage.

Provided herein is a method including fusion bonding a handle wafer to a first side of a device wafer. Standoffs are formed on a second side of the device wafer. A first hardmask is deposited on the second side. A second hardmask is deposited on the first hardmask. A surface of the second hardmask is planarized. A photoresist is deposited on the second hardmask, wherein the photoresist includes a MEMS device pattern. The MEMS device pattern is etched into the second hardmask. The MEMS device pattern is etched into the first hardmask, wherein the etching stops before reaching the device wafer. The photoresist and the second hardmask are removed. The MEMS device pattern is further etched into the first hardmask, wherein the further etching reaches the device wafer. The MEMS device pattern is etched into the device wafer. The first hardmask is removed.

A microfluidic device, a diagnostic device including the microfluidic device and a method for making the microfluidic device are provided. The microfluidic device includes: (i) a transparent substrate comprising a cavity, the cavity opening up to a top of the transparent substrate; (ii) a transparent layer covering the cavity, and (iii) a semiconductor substrate over the transparent layer and the transparent substrate, wherein the semiconductor substrate comprises a through hole overlaying the cavity and exposing the transparent layer.

A method of forming an ultrasonic transducer device includes forming and patterning a film stack over a substrate, the film stack comprising a metal electrode layer and a chemical mechanical polishing (CMP) stop layer formed over the metal electrode layer; forming an insulation layer over the patterned film stack; planarizing the insulation layer to the CMP stop layer; measuring a remaining thickness of the CMP stop layer; and forming a membrane support layer over the patterned film stack, wherein the membrane support layer is formed at thickness dependent upon the measured remaining thickness of the CMP stop layer, such that a combined thickness of the CMP stop layer and the membrane support layer corresponds to a desired transducer cavity depth.