Embodiments relate to an apparatus for forming nano-structures with tailored properties on objects while fabricating the objects. The apparatus includes a reservoir that holds compositions therein. Each of the compositions includes a nano-structural material, a plurality of grain growth inhibitor nano-particles, and at least one of a tailoring solute and a plurality of tailoring nano-particles. A nozzle is operatively coupled to the reservoir and a translatable stage is positioned proximate to the nozzle. The stage includes a substrate holder adapted to hold a substrate. A surface profile determination device is positioned proximate to the stage to obtain profile data of the substrate. A control unit is operatively coupled to the device and the stage and regulates manufacture of a pinned nano-structure. The control unit forms deposition layers positioned proximal to the substrate with the compositions through electrospray techniques.

A semiconductor structure is provided. A non-limiting example of the structure includes a substrate and a plurality of first pillars of a conductive material above a first portion of the substrate. The structure further includes a plurality of second pillars of the conductive material above a second portion of the substrate, wherein the plurality of first pillars are offset by a gap distance from the plurality of second pillars along a longitudinal axis.

Provided is a composite metal-wide-bandgap semiconductor tip for scanning tunneling microscopy and/or scanning, tunneling lithography, a method of forming, and a method for using the composite metal-wide-bandgap semiconductor tip.

Methods, devices, and systems for forming atomically precise structures are provided. In some embodiments, the methods, devices, and systems of the present disclosure utilize a scanning tunneling microscope (STM) system to receive a sample having a surface to be patterned. The system positions a conductive tip over a pixel region of the surface. While the conductive tip remains laterally fixed relative to the surface, the system applies a bias voltage between the conductive tip and the surface such that a current between the conductive tip and the surface removes at least one atom from the pixel region. The system stops applying the voltage and current when it senses the removal of the at least one atom. The system then verifies that the at least one atom has been removed from the pixel region.

A method for making nanomaterials includes introducing into a catalyzed reactor vessel: a carrier gas at a first carrier gas feed rate; at least one carbon-based reactant at a first reactant feed rate; and optionally, at least one additive at a first additive feed rate. The reactor vessel is heated to a first temperature of at least 150 C., so that a portion of the carbon-based reactant within the reactor vessel reacts to form a plurality of nanomaterials. An exhaust gas is removed from the reactor and periodically sampled by exposing a paper web to the gas so that a sample of the nanomaterials from the gas are deposited on a region of the paper web for analysis. Based on this analysis, at least one reaction parameter selected from the group consisting of the first carrier gas feed rate, the first reactant feed rate, and first temperature may be adjusted.

In the system and method disclosed, an ultrahigh vacuum (UHV) scanning tunneling microscope (STM) tip is used to selectively desorb hydrogen atoms from the Si(100)-2X1:H surface by injecting electrons at a negative sample bias voltage. A new lithography method is disclosed that allows the STM to operate under imaging conditions and simultaneously desorb H atoms as required. A high frequency signal is added to the negative sample bias voltage to deliver the required energy for hydrogen removal. The resulted current at this frequency and its harmonics are filtered to minimize their effect on the operation of the STM's feedback loop. This approach offers a significant potential for controlled and precise removal of hydrogen atoms from a hydrogen-terminated silicon surface and thus may be used for the fabrication of practical silicon-based atomic-scale devices.

Methods, systems, and devices are disclosed for performing mechanosynthesis, including those that involve bulk chemical preparation of tips, multiple tips for supplying feedstock, and use of sequential tips such as in a thermodynamic cascade; such features may simplify starting requirements, increase versatility, and/or reduce complexity in the mechanosynthesis equipment and/or process.

A method for depositing an object, including: approaching, in an enclosure, a holder in the direction of a carrier substrate, thentransferring, in the enclosure, the object from the holder to an area for depositing the carrier substrate. The transfer step is preferably carried out when the inside of the enclosure is in a vacuum at a pressure below 10.sup.6 bar.

A semiconductor structure is provided. A non-limiting example of the structure includes a substrate and a plurality of first pillars of a conductive material above a first portion of the substrate. The structure further includes a plurality of second pillars of the conductive material above a second portion of the substrate, wherein the plurality of first pillars are offset by a gap distance from the plurality of second pillars along a longitudinal axis.

Embodiments relate to an apparatus for forming nano-structures with tailored properties on objects while fabricating the objects. The apparatus includes a reservoir that holds compositions therein. Each of the compositions includes a nano-structural material, a plurality of grain growth inhibitor nano-particles, and at least one of a tailoring solute and a plurality of tailoring nano-particles. A nozzle is operatively coupled to the reservoir and a translatable stage is positioned proximate to the nozzle. The stage includes a substrate holder adapted to hold a substrate. A surface profile determination device is positioned proximate to the stage to obtain profile data of the substrate. A control unit is operatively coupled to the device and the stage and regulates manufacture of a pinned nano-structure. The control unit forms deposition layers positioned proximal to the substrate with the compositions through electrospray techniques.