The present invention relates to novel nano- and micro-electromechanical devices and novel methods of preparing them. In one aspect, the invention includes methods of preparing a nanodevice. In certain embodiments, the methods comprise coating a polymer layer with a first at least one thin solid material layer using atomic layer deposition (ALD), thus forming an ALD-generated layer. In other embodiments, the methods comprise patterning the first at least one thin solid material layer to form a nanodevice. In yet other embodiments, the methods comprise releasing the nanodevice from the polymer layer.

Techniques for fabricating horizontally aligned nanochannels are provided. In one aspect, a method of forming a device having nanochannels is provided. The method includes: providing a SOI wafer having a SOI layer on a buried insulator; forming at least one nanowire and pads in the SOI layer, wherein the nanowire is attached at opposite ends thereof to the pads, and wherein the nanowire is suspended over the buried insulator; forming a mask over the pads, the mask having a gap therein where the nanowire is exposed between the pads; forming an alternating series of metal layers and insulator layers alongside one another within the gap and surrounding the nanowire; and removing the nanowire to form at least one of the nanochannels in the alternating series of the metal layers and insulator layers. A device having nanochannels is also provided.

Processes for shaping one- and two-dimensional nanomaterials, and thereby inducing local strains therein preferably to control one or more of their material properties. The processes include providing a substrate comprising a three-dimensional surface feature thereon, locating a nanomaterial on the substrate and over the surface feature, and directing a laser beam toward the nanomaterial such that the nanomaterial experiences laser shock pressure sufficient to deform the nanomaterial to conform at least partially to the shape of the surface feature and adhere to the surface feature either directly or via an intermediate layer therebetween.

Techniques for fabricating horizontally aligned nanochannels are provided. In one aspect, a method of forming a device having nanochannels is provided. The method includes: providing a SOI wafer having a SOI layer on a buried insulator; forming at least one nanowire and pads in the SOI layer, wherein the nanowire is attached at opposite ends thereof to the pads, and wherein the nanowire is suspended over the buried insulator; forming a mask over the pads, the mask having a gap therein where the nanowire is exposed between the pads; forming an alternating series of metal layers and insulator layers alongside one another within the gap and surrounding the nanowire; and removing the nanowire to form at least one of the nanochannels in the alternating series of the metal layers and insulator layers. A device having nanochannels is also provided.

Processes for shaping one- and two-dimensional nanomaterials, and thereby inducing local strains therein preferably to control one or more of their material properties. The processes include providing a substrate comprising a three-dimensional surface feature thereon, locating a nanomaterial on the substrate and over the surface feature, and directing a laser beam toward the nanomaterial such that the nanomaterial experiences laser shock pressure sufficient to deform the nanomaterial to conform at least partially to the shape of the surface feature and adhere to the surface feature either directly or via an intermediate layer therebetween.

A NEMS device structure and a method for forming the same are provided. The NEMS device structure includes a substrate and an interconnect structure formed over the substrate. The NEMS device structure includes a dielectric layer formed over the interconnect structure and a beam structure formed in and over the dielectric layer. The beam structure includes a fixed portion and a moveable portion, the fixed portion is extended vertically, and the movable portion is extended horizontally. The NEMS device structure includes a cap structure formed over the dielectric layer and the beam structure and a cavity formed between the beam structure and the cap structure.

One embodiment is a nanostructured arrangement having a base and pyramidal features formed on the base. Each pyramidal feature includes sloping sides converging at a vertex. The nanostructured arrangement further includes a nanostructured surface formed on at least one of the sloping sides of at least one of the pyramidal features. The nanostructured surface has a quasi-periodic, anisotropic array of elongated ridge elements having a wave-ordered structure pattern. Each ridge element has a wavelike cross-section and oriented substantially in a first direction.

Techniques for fabricating horizontally aligned nanochannels are provided. In one aspect, a method of forming a device having nanochannels is provided. The method includes: providing a SOI wafer having a SOI layer on a buried insulator; forming at least one nanowire and pads in the SOI layer, wherein the nanowire is attached at opposite ends thereof to the pads, and wherein the nanowire is suspended over the buried insulator; forming a mask over the pads, the mask having a gap therein where the nanowire is exposed between the pads; forming an alternating series of metal layers and insulator layers alongside one another within the gap and surrounding the nanowire; and removing the nanowire to form at least one of the nanochannels in the alternating series of the metal layers and insulator layers. A device having nanochannels is also provided.

Provided is a suspended type nanowire that is fixed and electrically connected to each of a first electrode disposed on a substrate and a second electrode disposed on the substrate and spaced apart from the first electrode and suspended on the substrate. Here, a cross-section in a direction perpendicular to a longitudinal direction of the suspended type nanowire includes at least one curved part, and the curve part includes a reference surface and at least one side surface extending downward from the reference surface.