The present invention relates to a process for removing arsine from hydrocarbon mixture having 2 to 4 carbon atoms. Said process comprises the contact of the hydrocarbon mixture having 2 to 4 carbon atoms with the adsorbent, wherein said adsorbent is the metal organic frameworks (MOFs) comprising: a) at least 1 transition metal selected from group 1B metal, group 2B metal, and group 4B metal, and b) the organic ligand selected from dicarboxylic acid compound or tricarboxylic acid compound, and wherein said adsorbent is subjected to the treatment with alcohol.

An exhaust system including an upstream portion, a downstream portion, a service access, and a silica filter defines an exhaust gas flow path. The downstream portion includes an aftertreatment component. The service access is between the upstream portion and the downstream portion. The silica filter includes a silica filter element and a housing enclosing the silica filter element. The housing includes a filter gas inlet and a filter gas outlet, and defines a filter flow path through the silica filter element between the filter gas inlet and the filter gas outlet. The silica filter element is configured to filter silica from exhaust gases of the engine and structured to create a uniform distribution of silica throughout the silica filter element. The silica filter is configured to be removed and replaced through the service access. The exhaust gas flow path includes the filter flow path.

An exhaust system for discharging from semiconductor manufacturing equipment a hazardous gas includes: a main exhaust pipe above the semiconductor manufacturing equipment and having a top surface on a first side and a bottom surface on a second side, a first branch pipe connected to a source of a gas mixture containing the hazardous gas on the second side and connected to the main exhaust pipe through the top surface, a second branch pipe connected to a gas box on the second side and connected to the main exhaust pipe through the bottom surface, and a detector on the second branch pipe configured to detect presence of the hazardous gas and downstream to the gas box. The first and the second branch pipes are connected to the main exhaust pipe at a first location and a second location, respectively. The first location is more upstream than the second location.

Embodiments disclosed herein include an abatement system for abating compounds produced in semiconductor processes. The abatement system includes a plasma source that has a first plate and a second plate parallel to the first plate. An electrode is disposed between the first and second plates and an outer wall is disposed between the first and second plates surrounding the electrode. The plasma source has a first plurality of magnets disposed on the first plate and a second plurality of magnets disposed on the second plate. The magnetic field created by the first and second plurality of magnets is substantially perpendicular to the electric field created between the electrode and the outer wall. In this configuration, a dense plasma is created.

An air separation system includes an air separation module configured to receive feed air and separate the feed air into nitrogen-enriched air and oxygen-enriched air, a nitrogen-enriched air line for transporting the nitrogen-enriched air from the air separation module to a fuel tank for inerting, an oxygen sensing line connected to the nitrogen-enriched air line, a gas adsorption filter located in the oxygen sensing line, and an oxygen sensor downstream of the gas adsorption filter in the oxygen sensing line.

An air cleaning device (1) in a containment, especially isolator, is provided which includes a catalyst (2) which is disposed on a surface of a porous support (3) and is covered by a grid, preferably on both sides, in a flow cross section (5). The air cleaning device is used for elimination of hydrogen peroxide. A containment in which the air cleaning device (1) is incorporated into the circulation circuit of the containment is also provided.

A waste gas scrubber includes a reaction chamber configured to decompose waste gas, at least one heater configured to heat the waste gas flowing into the reaction chamber, a fine powder separation device configured to emit compressed air, and a monolith catalyst including a catalyst support, a plurality of catalyst inner cells, and at least one catalyst material, the catalyst support in the reaction chamber and configured to support the plurality of catalyst inner cells, and the at least one catalyst material configured to cause a chemical reaction with the heated waste gas, the catalyst support including a first surface at which a first end of each of the plurality of catalyst inner cells is exposed, and a second surface at which a second end of each of the plurality of catalyst inner cells is exposed.

Disclosed is a process stop loss reduction system, in which in case that pressure in a trapping apparatus and pressure in a process chamber are increased because of space clogging or the like caused by reaction by-products while the trapping apparatus for trapping of a reaction by-product contained in exhaust gas discharged from the process chamber operates over a long period of time during a semiconductor process, only the trapping apparatus, to which a supply of exhaust gas is cut off, may be quickly replaced while inert gas is received in an idle state and continuously supplied to a vacuum pump through a bypass pipe of the trapping apparatus without stopping an operation of (shutting down) a semiconductor manufacturing process chamber facility, and then the trapping apparatus may be supplied with the exhaust gas again.

Systems for and methods of treating a fluid containing siloxanes, silanols, silanes, and/or other silicon compounds. A hot box receives an initial flow of the fluid, and reacts the initial flow with water at a temperature and pressure suitable for hydrolysis to generate a first treated flow, in which at least a portion of the siloxane is hydrolyzed to produce silicon dioxide and methane. A catalytic reactor receives the first treated flow, and converts at least a portion of volatile organic compounds (VOCs) and dioxygen to carbon dioxide and water to generate a second treated flow. A membrane separator receives the second treated flow, and removes at least a portion of the carbon dioxide and water to generate a clean gas flow.

An abatement apparatus includes: an abatement chamber configured to receive aneffluent stream and to provide an abated effluent stream; a wet scrubber located downstream of the abatement chamber, the wet scrubber being configured to receive the abated effluent stream and provide a scrubbed effluent stream; and a catalyst bed located downstream of the wet scrubber, the catalyst bed being configured to receive the scrubbed effluent stream and provide a remediated effluent stream. In this way, undesirable compounds present in the abated effluent stream, which are there because they were either already present in the effluent stream and were insufficiently abated by the abatement chamber or because they are abatement by-products generated within the abatement chamber, can be remediated, removed or reduced by the catalyst bed prior to being vented by the abatement apparatus.