Through the procedures of pretreatment, temperature swing adsorption (TSA) coarse desorption, pressure swing adsorption (PSA) purification and hydrogen purification, the hydrogenous waste gas from various procedures in the manufacturing process of semiconductor (especially silicon wafer), including the off-gas from chemical vapor deposition (CVD), doping (diffusion and ion implantation), photolithography and cleaning, the combusted and washed discharged gas of the off-gas in other procedures after field treatment and centralized treatment, or the hydrogenous waste gas entering the hydrogen discharge system are purified to meet the standard for the electronic grade hydrogen required for the manufacturing process of semiconductor, the recycling of hydrogen resources is realized, and the yield of hydrogen is greater than or equal to 70-85%. The present invention solves the technical difficulty the normal-pressure waste hydrogen recovered in the manufacturing process of semiconductor can't be returned to the manufacturing process of semiconductor for reuse.

Provided are certain activated carbonaceous materials which have been treated with dilute mineral acids to modify their surface chemistry and morphology. The modified activated carbonaceous materials of the disclosure are useful in removing certain contaminants from gaseous streams. In one embodiment, the contaminants are compounds containing silicon and oxygen moieties, such as alkyl silanols and alkyl siloxanes. The modified activated carbonaceous materials can be incorporated into filters and filter systems.

An apparatus for treatment of gaseous pollutants, the apparatus comprising a reaction portion and a passage. The reaction portion comprises a gas inlet unit, a reaction unit, a combustion unit and a cooling unit. The passage comprises a transverse section, a connection section and a straight section, the transverse section is provided with a top gas inlet in communication with the reaction portion and a lateral gas inlet, the connection section is connected between the transverse section and the straight section, the top gas inlet receives an effluent passing through the reaction portion and then flowing downwards, the lateral gas inlet receives a transverse air flow, and the effluent is driven by the transverse gas flow to form a cyclone and is discharged from an outlet of the straight section by means of the connection section.

A plasma abatement process for abating effluent containing compounds from a processing chamber is described. A plasma abatement process takes gaseous foreline effluent from a processing chamber, such as a deposition chamber, and reacts the effluent within a plasma chamber placed in the foreline path. The plasma dissociates the compounds within the effluent, converting the effluent into more benign compounds. Abating reagents may assist in the abating of the compounds. The abatement process may be a volatizing or a condensing abatement process. Representative volatilizing abating reagents include, for example, CH.sub.4, H.sub.2O, H.sub.2, NF.sub.3, SF.sub.6, F.sub.2, HCl, HF, Cl.sub.2, and HBr. Representative condensing abating reagents include, for example, H.sub.2, H.sub.2O, O.sub.2, N.sub.2, O.sub.3, CO, CO.sub.2, NH.sub.3, N.sub.2O, CH.sub.4, and combinations thereof.

The present disclosure provides an exhaust system for discharging from semiconductor manufacturing equipment a hazardous gas. The exhaust system includes: a main exhaust pipe positioned above the semiconductor manufacturing equipment and having a top surface and a bottom surface extending parallel to the top surface; a first branch pipe including an upstream end coupled to a source of a gas mixture and a downstream end connected to the main exhaust pipe through the top surface; a second branch pipe including an upstream end and a downstream end connected to the main exhaust pipe through the bottom surface; and a detector configured to detect presence of the hazardous gas in the second branch pipe.

According to one embodiment, a silicon-containing product forming apparatus includes a reaction chamber, an emission path, a process liquid tank, a supplier, and a flow path switcher. The emission path emits an emission material from the reaction chamber. The supplier includes a supply line configured to supply a process liquid to the emission path from the process liquid tank, and a byproduct generated by reaction is treated in the emission path by the supplied process liquid. The flow path switcher switches the communication state of the emission path with each of the reaction chamber and the supply line of the supplier.

A filter assembly has a housing. The housing has an inner body and an outer body surrounding at least a portion of the inner body. The inner body has a base extending in a lateral direction and a first sidewall extending axially outward from the base. The inner body defines a cavity. The first sidewall defines a perimetric surface around the cavity. A first filter media extends across the perimetric surface and across the cavity. An adsorbent is disposed in the cavity. The outer body has a second sidewall laterally outward from and surrounding the first sidewall. The second sidewall spans at least 50% of the axial length of the first sidewall. The outer body has a first axial end and a second axial end and a retainer portion extending laterally inward from the first axial end. The retainer portion is positioned axially outward from the first filter media.

A wet abatement system which can suppress the accumulation of foreign matters in a treatment gas line is proposed. There is provided a wet abatement system for detoxifying treatment gas by bringing the treatment gas into contact with liquid. The wet abatement system includes an inlet casing having an inlet port from which the treatment gas is let in and an outlet port provided below the inlet port and through which the treatment gas flows, and a liquid film forming device provided between the inlet port and the outlet port and configured to form a liquid film on an inner wall surface of the inlet casing. A heater configured to heat the inlet casing is embedded in an interior of a wall portion of the inlet casing, the wall portion constituting a portion situated above the liquid film forming device.

The present disclosure is directed to a trap filter system having a plurality of filters, the plurality of filters having filtering materials to remove contaminants from a flow of gas effluents generated by a semiconductor processing tool and a bypass mechanism configured to selectively direct or shut off the flow of gas effluents to one or more of the plurality of filters while the semiconductor processing tool remains in operation. Each of the plurality of filters is removable and replaceable when the filtering material is unable to effectuate the removal of contaminants.

According to an embodiment, a process apparatus performs processing on a byproduct generated in a reaction of a raw material including silicon and a halogen element or in a reaction between a raw material including silicon and a raw material including a halogen element. The apparatus includes a process liquid tank, a processing tank, a supplier and an exhauster. A process target member including the byproduct is introduced into the processing tank. The supplier supplies the process liquid from the process liquid tank to the processing tank and performs processing on the byproduct with the supplied process liquid. The exhauster exhausts a gas generated by reaction between the process liquid and the byproduct from the processing tank.