An apparatus for treating gaseous pollutants includes a gas inlet part, a first treatment unit, a second treatment unit and a non-mechanical flow-guiding device. The gas inlet part includes a gas inlet chamber and at least one guide pipe. The guide pipe communicates with the gas inlet chamber and guides an effluent stream from a semiconductor process to the gas inlet chamber. The first treatment unit is coupled to a bottom end of the gas inlet part and is configured to abate the effluent stream. The non-mechanical flow-guiding device is coupled to the first treatment unit. The flow-guiding device is configured to guide the effluent stream to move toward an opening. The second treatment unit is coupled to the flow-guiding device via the opening, receives the effluent stream from the first treatment unit and further abates the effluent stream.

An apparatus and method for treating a semiconductor process gas comprises a gas inlet allowing a treatment target gas (or gas to be treated) to flow therethrough; a catalytic reaction portion including a catalyst and configured to allow the treatment target gas to be brought into contact with the catalyst; a space velocity controller between the gas inlet and the catalytic reaction portion, the space velocity controller extending from the gas inlet in a diagonal direction in relation to the gas inlet; a differential pressure buffer portion between the space velocity controller and the catalytic reaction portion and including a filter; and a gas outlet configured to externally discharge a product formed as the treatment target gas comes into contact with the catalyst.

Disclosed is a gas collection apparatus used in manufacturing a semiconductor. The apparatus includes: a housing having a chamber formed therein; a heating member installed in the housing to heat cobalt-carbon gas introduced into the chamber; a cobalt deposition member installed across the chamber of the housing to deposit cobalt composite; and a cooling member that induces carbon composite to be solidified and deposited while rapidly cooling the carbon composite.

Disclosed is a substrate processing apparatus and the method of processing an exhaust gas. The substrate processing apparatus and the method of processing an exhaust gas according to the present invention, an exhaust gas decomposition module may decompose a source gas exhausted from a process chamber to decompose a ligand of the source gas. Also, the ligand and the source gas of which the ligand has been decomposed may be put in a stabilized state by reacting with separately supplied O.sub.2, N.sub.2O, or O.sub.3, and then, may be changed to a mixed gas including a reactant gas mixed therewith. Subsequently, the mixed gas may flow into the exhaust pump and may be emitted. Alternatively, the ligand and the source gas may be mixed with the reactant gas and may be emitted. Therefore, the ligand and the source gas of which the ligand has been decomposed may not react with the reactant gas or heat which occurs in the exhaust pump, and thus, the ligand-decomposed source gas and the ligand flowing into the exhaust pump are not deposited on an inner surface of the exhaust pump. Also, the ligand-decomposed source gas and ligands piled in the exhaust pump are not exploded.

The invention provides a device and system for decomposing and oxidizing of gaseous pollutants. A novel reaction portion reduces particle formation in fluids during treatment, thereby improving the defect of particle accumulation in a reaction portion. Also, the system includes the device, wherein a modular design enables the system to have the advantage of easy repair and maintenance.

Disclosed is an apparatus having a cooling line for collecting a by-product in a semiconductor manufacturing process. The apparatus includes: a housing (110) including an inner wall plate (111) on an inner wall thereof to collect a by-product while generating a vortex in exhaust gas which is temperature-controlled by a heater (140) while being introduced through a gas inlet of an upper plate; an internal collecting tower (150) including vertical plates, an upper cover plate, and vortex plates fitted to the vertical plates, and condensing the introduced exhaust gas to collect the by-product; a main cooling channel (160) cooling the exhaust gas by using coolant while passing through the internal collecting tower (150); and a multi-connection pipe (170) sequentially supplying the coolant to an upper plate cooling channel and a main cooling channel and discharging the coolant, by using a supply pipe and a discharge pipe provided outside the housing.

The present disclosure is directed to a trap filter system having a plurality of filters, the plurality of filters having filtering materials to remove contaminants from a flow of gas effluents generated by a semiconductor processing tool and a bypass mechanism configured to selectively direct or shut off the flow of gas effluents to one or more of the plurality of filters while the semiconductor processing tool remains in operation. Each of the plurality of filters is removable and replaceable when the filtering material is unable to effectuate the removal of contaminants.

The present disclosure is directed to a manifold assembly for a trap filter system having an inlet for receiving a flow of gas effluents containing contaminants generated by a semiconductor processing tool, a housing for a plurality of filters, wherein the plurality of trap filters connected to the inlet and are interchangeable while the semiconductor processing tool remains in operation, and a bypass mechanism configured to selectively direct or shut off the flow of gas effluent to one or more of the plurality of trap filters, wherein each of the plurality of filter is removable and replaceable when the filter is unable to effectuate the removal of contaminants.

A semiconductor waste abatement system for a semiconductor processing system includes a vacuum pump, an abatement apparatus having an abatement chamber in fluid communication with a source of semiconductor waste gas from the semiconductor processing chamber, and with the abatement chamber configured to ionize the waste gas and to exhaust ionized gas. The abatement system further includes a filter apparatus with a filter chamber, which forms a liquid reservoir. The inlet of the filter apparatus is in fluid communication with the outlet of the abatement chamber and the liquid reservoir, and the outlet of the filter apparatus is in communication with the inlet of the vacuum pump, wherein the filter chamber is under a vacuum, and wherein semiconductor waste gas is ionized in the abatement chamber and then filtered by the filter apparatus prior to input to the vacuum pump.

Disclosed is a system for treating exhaust fluid from semiconductor manufacturing equipment in which cleaning gases decomposed by a plastic apparatus alternately flow towards a front rotor region (a main rotor unit) and a rear rotor region (a subsidiary rotor unit) of a booster pump and then flow towards a dry pump, and thus uniformly react with process byproducts present throughout the whole area in a vacuum pump including the booster pump and the dry pump so as to improve removal efficiency of the process byproducts. Further, the retention time of the cleaning gases decomposed by the plasma apparatus in the vacuum pump is increased by adjusting the pressure in the pump with the rotational speed of a motor, and thus the reaction time of the cleaning gases with the process byproducts is increased, so as to further improve removal efficiency of the process byproducts, such as SiO.sub.2 powder.