According to one embodiment, a gas recovering apparatus includes a casing and a tube. The casing is provided with an inlet through which a gas flows in, a first outlet for discharging a first gas containing a gas to be recovered of the gas, and a second outlet for discharging a second gas other than the first gas of the gas. The casing is evacuated via the first outlet. The tube is provided in the casing from the inlet to the second outlet, and has a high permeability to the first gas and a low permeability to the second gas.

An exhaust pipe device according to an embodiment includes a dielectric pipe; a radio-frequency electrode; a ground electrode; and a plasma generation circuit. The radio-frequency electrode is disposed on an outer periphery side of the dielectric pipe and a radio-frequency voltage is applied to the radio-frequency electrode. The ground electrode is disposed on an end portion side of the dielectric pipe such that a distance from the radio-frequency electrode is smaller on an inner side than on an outer side of the dielectric pipe, and a ground potential is applied to the ground electrode. The plasma generation circuit generates plasma inside the dielectric pipe. The exhaust pipe device functions as a part of an exhaust pipe disposed between a film forming chamber and a vacuum pump that exhausts gas inside the film forming chamber.

An exhaust gas treatment facility includes: a combustion chamber for combustion-treating an exhaust gas; a nozzle for letting water flow along an inner wall surface of the combustion chamber; a water-feeding line for supplying water to the nozzle; a primary gas-cleaning chamber; a scrubber; and the like. The water-feeding line has a pipe, a pump, and pipes. An alkali-adding apparatus is provided on the pipe on an upstream side of the pump. The alkali-adding apparatus is controlled so as to regulate a detected pH by a pH meter to be 10 or higher.

According to an embodiment, a process apparatus performs processing on a byproduct generated in a reaction of a raw material including silicon and a halogen element or in a reaction between a raw material including silicon and a raw material including a halogen element. The apparatus includes a process liquid tank, a processing tank, a supplier and an exhauster. A process target member including the byproduct is introduced into the processing tank. The supplier supplies the process liquid from the process liquid tank to the processing tank and performs processing on the byproduct with the supplied process liquid. The exhauster exhausts a gas generated by reaction between the process liquid and the byproduct from the processing tank.

A gas filter includes a housing including a mounting portion and a main portion. The mounting portion is configured to mount the gas filter on a surface of a device. The main portion is configured to be positioned apart from the surface of the device and extends from the mounting portion in a horizontal direction. The housing has an inlet and an outlet and defines a flow channel between the inlet and the outlet. The flow channel has first and second channel portions, the first channel portion extending from the inlet to the second channel portion, the second channel portion extending in a direction substantially parallel to the horizontal direction. A filter member is positioned in the flow channel between the inlet and the outlet.

Methods and apparatus for treating an exhaust gas in a foreline of a substrate processing system are provided herein. In some embodiments, a method for treating an exhaust gas in an exhaust conduit of a substrate processing system includes: flowing an exhaust gas from a process chamber into a plasma source via a foreline; injecting a reagent into the foreline; forming a plasma in the plasma source from the exhaust gas and the reagent; and injecting a cleaning gas into the foreline, wherein the cleaning gas and the reagent are different gases.

A plurality of system control devices respectively include network interfaces for communicating with each other via a network. One of the plurality of system control devices functions as a master system control device, and the remaining system control devices function as slave system control devices. The master system control device transmits a control command to the slave system control devices by means of the network interface. The slave system control devices receive the control command by means of the network interfaces and supply an operation command to abatement devices in accordance with the control command. When unable to communicate with the master system control device, the slave system control devices either function as master system control devices or enter stand-alone operation mode.

The disclosure describes various aspects of a metal organic chemical vapor deposition (MOCVD) effluent abatement process. In an aspect, a system for removing toxic waste from an exhaust stream includes a first cold trap that operates at a first pressure and condenses toxic materials in the exhaust stream for removal as solid waste; a pump connected to the first cold trap that increases a pressure of the exhaust stream; a hot cracker connected to the pump that decomposes toxic materials remaining in the exhaust stream after the first cold trap; a second cold trap connected to the hot cracker that operates at a second pressure higher than the first pressure and condenses the decomposed toxic materials remaining in the exhaust stream for removal as solid waste; and a scrubber connected to the second cold trap that absorbs toxic materials remaining in the exhaust stream after the second cold trap.

A gas laser apparatus may include: a laser chamber connected through a first control valve to a first laser gas supply source that supplies a first laser gas containing a halogen gas; a purification column that removes at least a part of the halogen gas and a halogen compound from at least a part of a gas exhausted from the laser chamber; a booster pump; and a controller that calculates, on a basis of a first amount of a gas supplied from the booster pump to the laser chamber, a second amount of the first laser gas that is to be supplied to the laser chamber and controls the first control valve on a basis of a result of the calculation of the second amount.

A method of controlling an apparatus that removes specified substances from a process gaseous stream can control at least one fan and a rotary wheel that removes the specified substances. The method includes measuring a pressure difference of the process gaseous stream across upstream and downstream sides of the rotary wheel, comparing the measured pressure difference to a predetermined pressure range, and controlling the at least one fan to increase or decrease its speed if the measured pressure difference is outside of the predetermined pressure range so as to change the pressure difference so as to be within the predetermined pressure range.