The present disclosure provides an exhaust system for discharging from semiconductor manufacturing equipment a hazardous gas. The exhaust system includes: a main exhaust pipe having a top surface and a bottom surface; a first branch pipe including an upstream end coupled to a source of a gas mixture containing the hazardous gas and a downstream end connected to the main exhaust pipe through the top surface; a second branch pipe including a downstream end connected to the main exhaust pipe through the bottom surface; and a detector configured to detect presence of the hazardous gas in the second branch pipe.

A detoxification device has an inlet nozzle capable of reducing an amount of a deposit of an adhering metallic product and elongating a maintenance cycle and a detoxification device including the inlet nozzle. The inlet nozzle includes a portion adjacent to a combustor, that is cut (removed) in advance. Consequently, in the portion, an insulator made of a ceramic material is exposed. Since the ceramic material supplies a small number of electrons, even when the insulator is exposed to heat from the combustor to reach a high temperature, a reductive reaction is less likely to occur. Accordingly, even when a metallic exhaust gas is allowed to flow, the metallic exhaust gas is prevented from being precipitated as the metallic product and gradually deposited with time.

A piping apparatus includes an exhaust pipe providing a passage through which the exhaust gas discharged, and a harmful gas treatment device positioned between a rear end of the vacuum pump and a front end of the exhaust pipe or positioned on the exhaust pipe, wherein the harmful gas treatment device includes a heating means for increasing the temperature of the exhaust gas so as to prevent a sublimable component, from among components included in the exhaust gas, from being sublimated and accumulated inside the exhaust pipe, and the heating means is positioned on a section including a sublimation condition occurrence point, at which a sublimation condition of the sublimable component occurs, and an upstream side of the sublimation condition occurrence point on the exhaust pipe, and the sublimation condition is a temperature condition for the pressure of the sublimable component.

Embodiments of point-of-use (POU) abatement device and methods of abating a plurality of gas streams from a corresponding plurality of processing chambers are provided herein. In some embodiments, a compact POU abatement device includes a plurality of inlets respectively coupled to a plurality of process chambers in which each of the process chambers gas streams is isolated from the other gas streams. In some embodiments, the compact POU abatement device can include a plurality of oxidation devices and a corresponding plurality of wet scrubber columns each directly coupled to ones of the plurality of inlets to receive a gas stream from a corresponding process chamber.

Method and apparatus for condensing a majority of the solvent in a process gas stream at low temperatures, e.g., below the freezing point of water, ca. −5° C. The gas stream exiting the condenser step may be further processed in one or more emission control devices, such as a single or multi-step series of concentrator devices, such as zeolite concentrator devices. One or more emission control operations can be carried out downstream of the single or multi-step concentrators. The aforementioned condensing process enables the one or more concentrators to operate in a favorable temperature range for removal of 99% or more of VOC, thereby meeting or exceeding strict environmental regulations.

An adsorbent composition comprises a bismuth material, a promoter and optionally a support. The adsorbent composition is suitable for adsorbing an arsenic material, such as arsine, from a process stream.

An agent for removing a halogen gas, such as chlorine, in a waste gas by means of reduction; a method for producing this agent; a method for removing a halogen gas by use of this agent; and a system for removing a halogen gas. The agent for removing the halogen gas contains at least pseudo-boehmite, that serves as a host material, and a sulfur-containing reducing agent, that serves as a guest material. 1-8% by weight of the reducing agent, in terms of elemental sulfur, based on the total amount of the pseudo-boehmite and sulfur-containing reducing agent is present in the agent. At least one inorganic compound selected from among oxides, carbonates salts and hydrocarbon salts of alkaline earth metal elements, transition metal elements and zinc group elements is additionally contained in the agent as a third component.

Embodiments of the present disclosure relate to gas abatement apparatus and effluent management. The apparatus described herein include a high pressure process chamber and a containment chamber surrounding the process chamber. A high pressure fluid delivery module is in fluid communication with the high pressure process chamber and is configured to deliver a high pressure fluid to the process chamber. An effluent management module includes a muffler assembly to effluent pressure reduction and a plurality of scrubbers provide for treatment of effluent.

The invention provides a device and system for decomposing and oxidizing of gaseous pollutants. A novel reaction portion reduces particle formation in fluids during treatment, thereby improving the defect of particle accumulation in a reaction portion. Also, the system includes the device, wherein a modular design enables the system to have the advantage of easy repair and maintenance.

The present disclosure provides an exhaust system for discharging from semiconductor manufacturing equipment a hazardous gas. The exhaust system includes: a main exhaust pipe having a top surface and a bottom surface; a first branch pipe including an upstream end coupled to a source of a gas mixture containing the hazardous gas and a downstream end connected to the main exhaust pipe through the top surface; a second branch pipe including a downstream end connected to the main exhaust pipe through the bottom surface; and a detector configured to detect presence of the hazardous gas in the second branch pipe.